Abstract: A memory array for process variation tolerant bypass operation. The memory array may utilize normal read operation data path of a memory I/O module. Accordingly, the speed at which the bypass operation may be executed may be increased. Furthermore, a potential for false read operations introduced by the utilization of the normal read operation data path of the memory I/O module may be reduced using a protect mechanism operable to block the output of false reads from the memory array.

Abstract: Embodiments include systems and methods for faster memory read-out using a combined read-select circuit. A novel read-select circuit is described, which, when enabled for reading, concurrently reads its respective input line and selects its value for read-out by the circuit. This can reduce delays and unnecessary toggling resulting from separate read and select circuits. Some implementations also include a multi-global-line architecture that can reduce the number of read stages in the memory read-out circuitry, thereby further reducing read-out delays. Accordingly, embodiments can be faster and more efficient than many traditional implementations without relying on an increase in power consumption or clock speed.

Abstract: A process variation tolerant collision detection apparatus for use in detecting collisions in a multibank memory. The apparatus may receive a plurality of memory commands for execution at the multibank memory. The plurality of memory commands may be compared by an index address comparator and a bank address comparator to generate an index match signal and a bank match signal. The index match signal and the bank match signal may be analyzed by a timing correction module such that errors associated with process variation of the signals used in the system may be eliminated. Accordingly, a corrected index match signal and a corrected bank match signal may be provided to a collision detection circuit to determine whether a collision exits.

Abstract: Embodiments include systems and methods for faster memory read-out using a combined read-select circuit. A novel read-select circuit is described, which, when enabled for reading, concurrently reads its respective input line and selects its value for read-out by the circuit. This can reduce delays and unnecessary toggling resulting from separate read and select circuits. Some implementations also include a multi-global-line architecture that can reduce the number of read stages in the memory read-out circuitry, thereby further reducing read-out delays. Accordingly, embodiments can be faster and more efficient than many traditional implementations without relying on an increase in power consumption or clock speed.

Abstract: A process variation tolerant collision detection apparatus for use in detecting collisions in a multibank memory. The apparatus may receive a plurality of memory commands for execution at the multibank memory. The plurality of memory commands may be compared by an index address comparator and a bank address comparator to generate an index match signal and a bank match signal. The index match signal and the bank match signal may be analyzed by a timing correction module such that errors associated with process variation of the signals used in the system may be eliminated. Accordingly, a corrected index match signal and a corrected bank match signal may be provided to a collision detection circuit to determine whether a collision exits.

Abstract: A memory array for process variation tolerant bypass operation. The memory array may utilize normal read operation data path of a memory I/O module. Accordingly, the speed at which the bypass operation may be executed may be increased. Furthermore, a potential for false read operations introduced by the utilization of the normal read operation data path of the memory I/O module may be reduced using a protect mechanism operable to block the output of false reads from the memory array.