Patents by Inventor Sirish Reddy
Sirish Reddy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200063261Abstract: Showerheads for independently delivering different, mutually-reactive process gases to a wafer processing space are provided. The showerheads include a first gas distributor that has multiple plenum structures that are separated from one another by a gap, as well as a second gas distributor positioned above the first gas distributor. Isolation gas from the second gas distributor may be flowed down onto the first gas distributor and through the gaps in between the plenum structures of the first gas distributor, thereby establishing an isolation gas curtain that prevents the process gases released from each plenum structure from parasitically depositing on the plenum structures that provide other gases.Type: ApplicationFiled: November 1, 2019Publication date: February 27, 2020Inventors: Nagraj Shankar, Jeffrey D. Womack, Meliha Gozde Rainville, Emile C. Draper, Pankaj G. Ramnani, Feng Bi, Pengyi Zhang, Elham Mohimi, Kapu Sirish Reddy
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Patent number: 10566194Abstract: Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap filling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.Type: GrantFiled: May 7, 2018Date of Patent: February 18, 2020Assignee: Lam Research CorporationInventors: Nagraj Shankar, Kapu Sirish Reddy, Jon Henri, Pengyi Zhang, Elham Mohimi, Bhavin Jariwala, Arpan Pravin Mahorowala
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Patent number: 10559461Abstract: Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate.Type: GrantFiled: April 28, 2017Date of Patent: February 11, 2020Assignee: LAM RESEARCH CORPORATIONInventors: Kapu Sirish Reddy, Meliha Gozde Rainville, Nagraj Shankar, Dennis M. Hausmann, David Charles Smith, Karthik Sivaramakrishnan, David W. Porter
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Publication number: 20200043776Abstract: A method of improving selectivity of a metal in a selective deposition process. A pre-treatment process for the metal modifies the metal surface, and includes first reducing the metal to remove organic contamination from the metal followed by oxidation of the metal to allow a monolayer of a metal oxide to grow on the surface. This modification of the metal allows inhibitor molecules to adsorb on the metal oxide monolayer to improve selectivity.Type: ApplicationFiled: August 6, 2018Publication date: February 6, 2020Inventors: Dennis HAUSMANN, Elham MOHIMI, Pengyi ZHANG, Paul C. LEMAIRE, Kashish SHARMA, Alexander R. FOX, Nagraj SHANKAR, Kapu Sirish REDDY, David Charles SMITH
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Publication number: 20190352777Abstract: Showerheads for independently delivering different, mutually-reactive process gases to a wafer processing space are provided. The showerheads include a first gas distributor that has multiple plenum structures that are separated from one another by a gap, as well as a second gas distributor positioned above the first gas distributor. Isolation gas from the second gas distributor may be flowed down onto the first gas distributor and through the gaps in between the plenum structures of the first gas distributor, thereby establishing an isolation gas curtain that prevents the process gases released from each plenum structure from parasitically depositing on the plenum structures that provide other gases.Type: ApplicationFiled: May 17, 2018Publication date: November 21, 2019Inventors: Nagraj Shankar, Jeffrey D. Womack, Meliha Gozde Rainville, Emile C. Draper, Pankaj G. Ramnani, Feng Bi, Pengyi Zhang, Elham Mohimi, Kapu Sirish Reddy
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Patent number: 10472716Abstract: Showerheads for independently delivering different, mutually-reactive process gases to a wafer processing space are provided. The showerheads include a first gas distributor that has multiple plenum structures that are separated from one another by a gap, as well as a second gas distributor positioned above the first gas distributor. Isolation gas from the second gas distributor may be flowed down onto the first gas distributor and through the gaps in between the plenum structures of the first gas distributor, thereby establishing an isolation gas curtain that prevents the process gases released from each plenum structure from parasitically depositing on the plenum structures that provide other gases.Type: GrantFiled: May 17, 2018Date of Patent: November 12, 2019Assignee: Lam Research CorporationInventors: Nagraj Shankar, Jeffrey D. Womack, Meliha Gozde Rainville, Emile C. Draper, Pankaj G. Ramnani, Feng Bi, Pengyi Zhang, Elham Mohimi, Kapu Sirish Reddy
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Publication number: 20190341256Abstract: Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap filling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.Type: ApplicationFiled: May 7, 2018Publication date: November 7, 2019Inventors: Nagraj Shankar, Kapu Sirish Reddy, Jon Henri, Pengyi Zhang, Elham Mohimi, Bhavin Jariwala, Arpan Pravin Mahorowala
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Patent number: 10418236Abstract: Dielectric composite films characterized by a dielectric constant (k) of less than about 7 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers. The dielectric composite film in one embodiment includes Al, Si, and O and has a thickness of between about 10-100 ?. The dielectric composite film can reside between two layers of inter-layer dielectric, and may be in contact with metal layers. An apparatus for depositing such dielectric composite films includes a process chamber, a conduit for delivering an aluminum containing precursor to the process chamber, a second conduit for delivering a silicon-containing precursor to the process chamber and a controller having program instructions for depositing the dielectric composite film from these precursors, e.g., by reacting the precursors adsorbed to the substrate with an oxygen-containing species.Type: GrantFiled: July 17, 2018Date of Patent: September 17, 2019Assignee: Lam Research CorporationInventors: Kapu Sirish Reddy, Nagraj Shankar, Shankar Swaminathan, Meliha Gozde Rainville, Frank L. Pasquale
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Patent number: 10242848Abstract: A carrier ring for use in a chamber implemented for depositing films and chambers that use the carrier ring are provided. The carrier ring has an annular disk shape with an outer edge side and a wafer edge side. The carrier ring has a top carrier ring surface that extends between the outer edge side to the wafer edge side. The wafer edge side includes a lower carrier ring surface that is lower than the top carrier ring surface. The wafer edge side also includes a plurality of contact support structures. Each contact support structure is located at an edge of the lower carrier ring surface and has a height that is between the lower carrier ring surface and the top carrier ring surface, and the contact support structure has tapered edges and corners. A step is defined between the top carrier ring surface and the lower carrier ring surface, such that a top facing edge is disposed at a top of the step and a lower inner edge is disposed at the bottom of the step.Type: GrantFiled: December 12, 2014Date of Patent: March 26, 2019Assignee: Lam Research CorporationInventors: Eli Jeon, Nick Ray Linebarger, Jr., Sirish Reddy, Alice Hollister, Rungthiwa Methaapanon
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Publication number: 20180342389Abstract: Dielectric composite films characterized by a dielectric constant (k) of less than about 7 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers. The dielectric composite film in one embodiment includes Al, Si, and O and has a thickness of between about 10-100 ?. The dielectric composite film can reside between two layers of inter-layer dielectric, and may be in contact with metal layers. An apparatus for depositing such dielectric composite films includes a process chamber, a conduit for delivering an aluminum containing precursor to the process chamber, a second conduit for delivering a silicon-containing precursor to the process chamber and a controller having program instructions for depositing the dielectric composite film from these precursors, e.g., by reacting the precursors adsorbed to the substrate with an oxygen-containing species.Type: ApplicationFiled: July 17, 2018Publication date: November 29, 2018Inventors: Kapu Sirish Reddy, Nagraj Shankar, Shankar Swaminathan, Meliha Gozde Rainville, Frank L. Pasquale
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Publication number: 20180308680Abstract: Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate.Type: ApplicationFiled: April 28, 2017Publication date: October 25, 2018Inventors: Kapu Sirish Reddy, Meliha Gozde Rainville, Nagraj Shankar, Dennis M. Hausmann, David Charles Smith, Karthik Sivaramakrishnan, David W. Porter
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Patent number: 10049869Abstract: Dielectric composite films characterized by a dielectric constant (k) of less than about 7 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers. The composite films in one embodiment include at least two elements selected from the group consisting of Al, Si, and Ge, and at least one element selected from the group consisting of O, N, and C. In one embodiment the composite film includes Al, Si and O. In one implementation, a substrate containing an exposed dielectric layer (e.g., a ULK dielectric) and an exposed metal layer is contacted with an aluminum-containing compound (such as trimethylaluminum) and, sequentially, with a silicon-containing compound. Adsorbed compounds are then treated with an oxygen-containing plasma (e.g., plasma formed in a CO2-containing gas) to form a film that contains Al, Si, and O.Type: GrantFiled: September 30, 2016Date of Patent: August 14, 2018Assignee: Lam Research CorporationInventors: Kapu Sirish Reddy, Nagraj Shankar, Shankar Swaminathan, Meliha Gozde Rainville, Frank L. Pasquale
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Publication number: 20180197770Abstract: Aluminum oxide films characterized by a dielectric constant (k) of less than about 7 (such as between about 4-6) and having a density of at least about 2.5 g/cm3 (such as about 3.0-3.2 g/cm3) are deposited on partially fabricated semiconductor devices over both metal and dielectric to serve as etch stop layers. The films are deposited using a deposition method that does not lead to oxidative damage of the metal. The deposition involves reacting an aluminum-containing precursor (e.g., a trialkylaluminum) with an alcohol and/or aluminum alkoxide. In one implementation the method involves flowing trimethylaluminum to the process chamber housing a substrate having an exposed metal and dielectric layers; purging and/or evacuating the process chamber; flowing t-butanol to the process chamber and allowing it to react with trimethylaluminum to form an aluminum oxide film and repeating the process steps until the film of desired thickness is formed.Type: ApplicationFiled: November 22, 2017Publication date: July 12, 2018Inventors: Meliha Gozde Rainville, Nagraj Shankar, Kapu Sirish Reddy, Dennis M. Hausmann
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Publication number: 20180096886Abstract: Dielectric composite films characterized by a dielectric constant (k) of less than about 7 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers. The composite films in one embodiment include at least two elements selected from the group consisting of Al, Si, and Ge, and at least one element selected from the group consisting of O, N, and C. In one embodiment the composite film includes Al, Si and O. In one implementation, a substrate containing an exposed dielectric layer (e.g., a ULK dielectric) and an exposed metal layer is contacted with an aluminum-containing compound (such as trimethylaluminum) and, sequentially, with a silicon-containing compound. Adsorbed compounds are then treated with an oxygen-containing plasma (e.g., plasma formed in a CO2-containing gas) to form a film that contains Al, Si, and O.Type: ApplicationFiled: September 30, 2016Publication date: April 5, 2018Inventors: Kapu Sirish Reddy, Nagraj Shankar, Shankar Swaminathan, Meliha Gozde Rainville, Frank L. Pasquale
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Patent number: 9928994Abstract: A method for depositing an amorphous carbon hardmask film includes arranging a substrate in a processing chamber, supplying a carrier gas to the processing chamber, supplying a hydrocarbon precursor to the processing chamber, supplying fluorine precursor from a group consisting of WFa, NFb, SFc, and F2 to the processing chamber, one of supplying plasma to the processing chamber or creating plasma in the processing chamber, and depositing an amorphous carbon hardmask film on the substrate. Fluorine from the fluorine precursor combines with hydrogen from the hydrocarbon precursor in gas phase reactions.Type: GrantFiled: February 3, 2015Date of Patent: March 27, 2018Assignee: LAM RESEARCH CORPORATIONInventors: Fayaz Shaikh, Sirish Reddy
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Patent number: 9875890Abstract: A system and method for depositing a metal dielectric film includes arranging a substrate in a plasma enhanced chemical vapor deposition (PECVD) processing chamber; supplying a carrier gas to the PECVD processing chamber; supplying a dielectric precursor gas to the PECVD processing chamber; supplying a metal precursor gas to the PECVD processing chamber; creating plasma in the PECVD processing chamber; and depositing a metal dielectric film on the substrate at a process temperature that is less than 500° C.Type: GrantFiled: March 24, 2015Date of Patent: January 23, 2018Assignee: LAM RESEARCH CORPORATIONInventors: Fayaz Shaikh, Sirish Reddy
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Patent number: 9859153Abstract: Aluminum oxide films characterized by a dielectric constant (k) of less than about 7 (such as between about 4-6) and having a density of at least about 2.5 g/cm3 (such as about 3.0-3.2 g/cm3) are deposited on partially fabricated semiconductor devices over both metal and dielectric to serve as etch stop layers. The films are deposited using a deposition method that does not lead to oxidative damage of the metal. The deposition involves reacting an aluminum-containing precursor (e.g., a trialkylaluminum) with an alcohol and/or aluminum alkoxide. In one implementation the method involves flowing trimethylaluminum to the process chamber housing a substrate having an exposed metal and dielectric layers; purging and/or evacuating the process chamber; flowing t-butanol to the process chamber and allowing it to react with trimethylaluminum to form an aluminum oxide film and repeating the process steps until the film of desired thickness is formed.Type: GrantFiled: November 14, 2016Date of Patent: January 2, 2018Assignee: Lam Research CorporationInventors: Meliha Gozde Rainville, Nagraj Shankar, Kapu Sirish Reddy, Dennis M. Hausmann
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Patent number: 9847221Abstract: Silicon oxide layer is deposited on a semiconductor substrate by PECVD at a temperature of less than about 200° C. and is treated with helium plasma to reduce stress of the deposited layer to an absolute value of less than about 80 MPa. Plasma treatment reduces hydrogen content in the silicon oxide layer, and leads to low stress films that can also have high density and low roughness. In some embodiments, the film is deposited on a semiconductor substrate that contains one or more temperature-sensitive layers, such as layers of organic material or spin-on dielectric that cannot withstand temperatures of greater than 250° C. In some embodiments the silicon oxide film is deposited to a thickness of between about 100-200 ?, and is used as a hardmask layer during etching of other layers on a semiconductor substrate.Type: GrantFiled: September 29, 2016Date of Patent: December 19, 2017Assignee: Lam Research CorporationInventors: Kevin M. McLaughlin, Amit Pharkya, Kapu Sirish Reddy
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Publication number: 20170309514Abstract: Thin AlN films are oxidatively treated in a plasma to form AlO and AlON films without causing damage to underlying layers of a partially fabricated semiconductor device (e.g., to underlying metal and/or dielectric layers). The resulting AlO and AlON films are characterized by improved leakage current compared to the AlN film and are suitable for use as etch stop layers. The oxidative treatment involves contacting the substrate having an exposed AlN layer with a plasma formed in a process gas comprising an oxygen-containing gas and a hydrogen-containing gas. In some implementations oxidative treatment is performed with a plasma formed in a process gas including CO2 as an oxygen-containing gas, H2 as a hydrogen-containing gas, and further including a diluent gas. The use of a hydrogen-containing gas in the plasma eliminates the oxidative damage to the underlying layers.Type: ApplicationFiled: June 28, 2016Publication date: October 26, 2017Inventors: Meliha Gozde Rainville, Nagraj Shankar, Daniel Damjanovic, Kapu Sirish Reddy
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Patent number: 9637821Abstract: A method for supplying vapor to a chamber includes providing a first diverter valve that, when open, diverts vapor away from the chamber, and a second diverter valve that, when open, supplies the vapor to the chamber; supplying a carrier gas to the chamber; after supplying the carrier gas, creating plasma in the chamber while a substrate is in the chamber; opening the first diverter valve and closing the second diverter valve; supplying the vapor by vaporizing at least one liquid precursor in a carrier gas; after a first predetermined period sufficient for the vapor to reach steady-state flow, closing the first diverter valve and opening the second diverter valve to supply the vapor to the chamber; and after a second predetermined period following the first predetermined period, opening the first diverter valve and closing the second diverter valve to stop supplying the vapor to the chamber.Type: GrantFiled: December 4, 2013Date of Patent: May 2, 2017Assignee: LAM RESEARCH CORPORATIONInventors: Damien Slevin, Brad Laird, Curtis Bailey, Ming Li, Sirish Reddy, James Sims, Mohamed Sabri, Saangrut Sangplug