Patents by Inventor Sisira Kankanam Gamage
Sisira Kankanam Gamage has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9010200Abstract: A device for measuring forces and a method of making the same. The device has a boss structure within a diaphragm cavity, wherein the boss structure has substantially parallel sidewalls. One or more sensors are installed proximate to the diaphragm to sense flexure in the diaphragm, which is controlled by the boss structure.Type: GrantFiled: August 6, 2012Date of Patent: April 21, 2015Assignee: Amphenol Thermometrics, Inc.Inventors: Sisira Kankanam Gamage, Naresh Venkata Mantravadi, Calin Victor Miclaus
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Patent number: 8857264Abstract: A catheter die is provided and includes an elongate body having first and second opposing end portions and an end face at the first one of the first and second opposing end portions. The elongate body defines a cavity within the first end portion with an interior facing surface of the cavity disposed to extend alongside at least a portion of the first end face. At least one or more piezoresistive pressure sensors are operably disposed proximate to the cavity.Type: GrantFiled: March 30, 2012Date of Patent: October 14, 2014Assignee: Amphenol Thermometrics, Inc.Inventor: Sisira Kankanam Gamage
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Patent number: 8748231Abstract: A method of attaching a die to a carrier using a temporary attach material is disclosed. The method comprises attaching the temporary attach material between a surface of the die and a surface of the carrier. The temporary attach material attaches the die to the carrier. The method comprises bonding at least one connector to the die and the carrier. The connector includes a first end bonded to the carrier and a second end bonded to the die. The method further comprises encapsulating at least a portion of the die and at least a portion of the at least one connector by an encapsulation material.Type: GrantFiled: August 23, 2011Date of Patent: June 10, 2014Assignee: Amphenol Thermometrics, Inc.Inventors: Elizabeth Anne Logan, Terry Lee Marvin Cookson, Sisira Kankanam Gamage, Ronald Almy Hollis
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Patent number: 8714021Abstract: A catheter die is provided and includes a device layer defining a cavity and including a piezoresistive pressure sensor operably disposed proximate to the cavity and an insulator having an opening and being disposed on an upper surface of the device layer such that a portion of the piezoresistive pressure sensor is exposed through the opening. The catheter die further includes an insulation layer bonded to a lower surface of the device layer and first and second bond pads, the first bond pad being electrically coupled to the portion of the piezoresistive pressure sensor via the opening and the second bond pad being disposed on the insulation layer.Type: GrantFiled: February 27, 2012Date of Patent: May 6, 2014Assignee: Amphenol Thermometrics, Inc.Inventor: Sisira Kankanam Gamage
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Publication number: 20140033833Abstract: A device for measuring forces and a method of making the same is disclosed. The device comprises a boss structure within a diaphragm cavity, wherein the boss structure has substantially parallel sidewalls. One or more sensors are installed proximate to the diaphragm to sense flexure in the diaphragm, which is controlled by the boss structure.Type: ApplicationFiled: August 6, 2012Publication date: February 6, 2014Applicant: General Electric CompanyInventors: Sisira Kankanam Gamage, Naresh Venkata Mantravadi, Calin Victor Miclaus
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Patent number: 8569092Abstract: A method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched device wafer comprising a double silicon on insulator wafer to create a suspended structure, the flexure of which is sensed by an embedded piezoresistive sensor element. In one embodiment the sensor measures acceleration. In other embodiments the sensor measures pressure.Type: GrantFiled: December 28, 2009Date of Patent: October 29, 2013Assignee: General Electric CompanyInventors: Naresh Venkata Mantravadi, Sisira Kankanam Gamage
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Patent number: 8569851Abstract: A sensor and method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched first device wafer comprising a silicon on insulator wafer which is then bonded to a second device wafer comprising a silicon on insulator wafer to create a vented, suspended structure, the flexure of which is sensed by an embedded sensing element to measure differential pressure. In one embodiment, interconnect channels embedded in the sensor facilitate streamlined packaging of the device while accommodating interconnectivity with other devices.Type: GrantFiled: June 18, 2010Date of Patent: October 29, 2013Assignee: General Electric CompanyInventors: Sisira Kankanam Gamage, Naresh Venkata Mantravadi, Michael Klitzke, Terry Lee Cookson
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Publication number: 20130259964Abstract: A catheter die is provided and includes an elongate body having first and second opposing end portions and an end face at the first one of the first and second opposing end portions. The elongate body defines a cavity within the first end portion with an interior facing surface of the cavity disposed to extend alongside at least a portion of the first end face. At least one or more piezoresistive pressure sensors are operably disposed proximate to the cavity.Type: ApplicationFiled: March 30, 2012Publication date: October 3, 2013Applicant: GENERAL ELECTRIC COMPANYInventor: Sisira Kankanam Gamage
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Publication number: 20130220972Abstract: A catheter die is provided and includes a device layer defining a cavity and including a piezoresistive pressure sensor operably disposed proximate to the cavity and an insulator having an opening and being disposed on an upper surface of the device layer such that a portion of the piezoresistive pressure sensor is exposed through the opening. The catheter die further includes an insulation layer bonded to a lower surface of the device layer and first and second bond pads, the first bond pad being electrically coupled to the portion of the piezoresistive pressure sensor via the opening and the second bond pad being disposed on the insulation layer.Type: ApplicationFiled: February 27, 2012Publication date: August 29, 2013Applicant: GENERAL ELECTRIC COMPANYInventor: Sisira Kankanam Gamage
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Patent number: 8511171Abstract: A device for measuring environmental forces, and a method for fabricating the same, is disclosed that comprises a device wafer, the device wafer comprising a first device layer separated from a second device layer by a first insulation layer. The first device wafer is bonded to an etched substrate wafer to create a suspended diaphragm and boss, the flexure of which is determined by an embedded sensing element.Type: GrantFiled: May 23, 2011Date of Patent: August 20, 2013Assignee: General Electric CompanyInventors: Sisira Kankanam Gamage, Naresh Venkata Mantravadi
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Patent number: 8435821Abstract: A sensor and method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched device wafer comprising a silicon on insulator wafer to create a suspended structure, the flexure of which is determined by an embedded sensing element to measure absolute pressure. Interconnect channels embedded in the sensor facilitate streamlined packaging of the device while accommodating interconnectivity with other devices.Type: GrantFiled: June 18, 2010Date of Patent: May 7, 2013Assignee: General Electric CompanyInventors: Sisira Kankanam Gamage, Naresh Venkata Mantravadi, Michael Klitzke, Terry Lee Cookson
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Publication number: 20130049232Abstract: A method of attaching a die to a carrier using a temporary attach material is disclosed. The method comprises attaching the temporary attach material between a surface of the die and a surface of the carrier. The temporary attach material attaches the die to the carrier. The method comprises bonding at least one connector to the die and the carrier. The connector includes a first end bonded to the carrier and a second end bonded to the die. The method further comprises encapsulating at least a portion of the die and at least a portion of the at least one connector by an encapsulation material.Type: ApplicationFiled: August 23, 2011Publication date: February 28, 2013Applicant: GENERAL ELECTRIC COMPANYInventors: Elizabeth Anne Logan, Terry Lee Marvin Cookson, Sisira Kankanam Gamage, Ronald Almy Hollis
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Publication number: 20120297884Abstract: A device for measuring environmental forces, and a method for fabricating the same, is disclosed that comprises a device wafer, the device wafer comprising a first device layer separated from a second device layer by a first insulation layer. The first device wafer is bonded to an etched substrate wafer to create a suspended diaphragm and boss, the flexure of which is determined by an embedded sensing element.Type: ApplicationFiled: May 23, 2011Publication date: November 29, 2012Applicant: General Electric CompanyInventors: Sisira Kankanam Gamage, Naresh Venkata Mantravadi
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Publication number: 20110308324Abstract: A sensor and method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched device wafer comprising a silicon on insulator wafer to create a suspended structure, the flexure of which is determined by an embedded sensing element to measure absolute pressure. Interconnect channels embedded in the sensor facilitate streamlined packaging of the device while accommodating interconnectivity with other devices.Type: ApplicationFiled: June 18, 2010Publication date: December 22, 2011Inventors: Sisira Kankanam GAMAGE, Naresh Venkata Mantravadi, Michael Klitzke, Terry Lee Cookson
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Publication number: 20110309458Abstract: A sensor and method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched first device wafer comprising a silicon on insulator wafer which is then bonded to a second device wafer comprising a silicon on insulator wafer to create a vented, suspended structure, the flexure of which is sensed by an embedded sensing element to measure differential pressure. In one embodiment, interconnect channels embedded in the sensor facilitate streamlined packaging of the device while accommodating interconnectivity with other devices.Type: ApplicationFiled: June 18, 2010Publication date: December 22, 2011Inventors: Sisira Kankanam GAMAGE, Naresh Venkata Mantravadi, Michael Klitzke, Terry Lee Cookson
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Patent number: 7998777Abstract: A method for fabricating a sensor is disclosed that in one embodiment bonds a first device wafer to an etched second device wafer to create a suspended structure, the flexure of which is determined by an embedded sensing element that is in electrical communication with an outer surface of the sensor through an interconnect embedded in a device layer of the first device wafer. In one embodiment the suspended structure is enclosed by a cap and the sensor is configured to measure absolute pressure.Type: GrantFiled: December 15, 2010Date of Patent: August 16, 2011Assignee: General Electric CompanyInventors: Sisira Kankanam Gamage, Naresh Venkata Mantravadi
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Publication number: 20110159627Abstract: A method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched device wafer comprising a double silicon on insulator wafer to create a suspended structure, the flexure of which is sensed by an embedded piezoresistive sensor element. In one embodiment the sensor measures acceleration. In other embodiments the sensor measures pressure.Type: ApplicationFiled: December 28, 2009Publication date: June 30, 2011Inventors: Naresh Venkata Mantravadi, Sisira Kankanam Gamage
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Patent number: 7622782Abstract: A pressure sensor includes a base substrate silicon fusion bonded to a cap substrate with a chamber disposed between the base substrate and the cap substrate. Each of the base substrate and the cap substrate include silicon. The base substrate includes walls defining a cavity and a diaphragm portion positioned over the cavity, wherein the cavity is open to an environment to be sensed. The chamber is hermetically sealed from the environment.Type: GrantFiled: August 24, 2005Date of Patent: November 24, 2009Assignee: General Electric CompanyInventors: Stanley Chu, Sisira Kankanam Gamage, Hyon-Jin Kwon