Patents by Inventor Si-ty Lam
Si-ty Lam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9997703Abstract: A resistive memory device includes a bottom electrode and a top electrode sandwiching a switching layer. The device also includes a field enhancement (FE) feature that extends from the bottom electrode either into the switching layer or is covered by switching layer and that is to enhance an electric field generated by the two electrodes to thereby confine a switching area of the device at the FE feature. The device further includes a planar interlayer dielectric surrounding the device, for supporting the top electrode. A method of making a resistive memory device, employing in-situ vacuum deposition of all layers, is also provided.Type: GrantFiled: July 25, 2013Date of Patent: June 12, 2018Assignee: Hewlett Packard Enterprise Development LPInventors: Si-Ty Lam, Xia Sheng, Richard H. Henze, Zhang-Lin Zhou
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Patent number: 9522870Abstract: Asymmetrical 2,5-disubstituted-1,4-diaminobenzenes are provided, along with a process for forming both symmetrical and asymmetrical 2,5-disubstituted-1,4-diaminobenzenes.Type: GrantFiled: March 9, 2012Date of Patent: December 20, 2016Assignee: Hewlett-Packard Development Company, L.P.Inventors: Zhang-Lin Zhou, Si-Ty Lam, Lihua Zhao
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Publication number: 20160141494Abstract: A resistive memory device includes a bottom electrode and a top electrode sandwiching a switching layer. The device also includes a field enhancement (FE) feature that extends from the bottom electrode either into the switching layer or is covered by switching layer and that is to enhance an electric field generated by the two electrodes to thereby confine a switching area of the device at the FE feature. The device further includes a planar interlayer dielectric surrounding the device, for supporting the top electrode. A method of making a resistive memory device, employing in-situ vacuum deposition of all layers, is also provided.Type: ApplicationFiled: July 25, 2013Publication date: May 19, 2016Applicant: Hewlett-Packard Development Company, L.P.Inventors: Si-Ty Lam, Xia Sheng, Richard H. Henze, Zhang-Lin Zhou
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Publication number: 20130237725Abstract: Asymmetrical 2,5-disubstituted-1,4-diaminobenzenes are provided, along with a process for forming both symmetrical and asymmetrical 2,5-disubstituted-1,4-diaminobenzenes.Type: ApplicationFiled: March 9, 2012Publication date: September 12, 2013Inventors: Zhang-Lin Zhou, Si-Ty Lam, Lihua Zhao
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Publication number: 20120247808Abstract: A transparent conductive material, including a substantially transparent carbon nanotube layer, and a metal layer deposited onto the carbon nanotube layer, in which the metal layer increases an electrical conductance of the transparent conductive material without substantially reducing an optical transmittance of the transparent conductive material.Type: ApplicationFiled: June 22, 2009Publication date: October 4, 2012Inventor: Si-Ty Lam
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Patent number: 7585687Abstract: A field emission device, which among other things may be used within an ultra-high density storage system, is disclosed. The emitter device includes an emitter electrode, an extractor electrode, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier. The Schottky metal-semiconductor barrier is formed on the emitter electrode and electrically couples with the extractor electrode such that when an electric potential is placed between the emitter electrode and the extractor electrode, a field emission of electrons is generated from an exposed surface of the semiconductor layer. Further, the Schottky metal may be selected from typical conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier.Type: GrantFiled: September 1, 2004Date of Patent: September 8, 2009Assignee: Hewlett-Packard Development Company, L.P.Inventors: Henryk Birecki, Vu Thien Binh, Si-ty Lam, Huei Pei Kuo, Steven L. Naberhuis
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Patent number: 7208867Abstract: An electron source includes a planar emission region for generating an electron emission, and a focusing structure for focusing the electron emission into an electron beam.Type: GrantFiled: July 14, 2004Date of Patent: April 24, 2007Assignee: Hewlett-Packard Development Company, LP.Inventors: Huei-Pei Kuo, Henryk Birecki, Si-Ty Lam, Steven Louis Naberhuis
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Publication number: 20060151777Abstract: An electron emitter that includes a metal film having a set of layers that are selected and arranged to adhere the metal film to a remainder of a structure of the electron emitter while avoiding electron loss in the metal film. A multiple layer metal film according to the present techniques enables a balance among adhesion properties, metal diffusion, and oxide properties that might otherwise hinder the performance of an electron emitter.Type: ApplicationFiled: January 12, 2005Publication date: July 13, 2006Inventors: Steven Naberhuis, Huei-Pei Kuo, Si-Ty Lam, Henryk Birecki, Xia Sheng
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Patent number: 7057997Abstract: An ultra-high-density data storage device that includes at least one energy beam emitter and a data storage medium that itself includes an organic material. The organic material may include one or more Langmuir-Blodgett layers and may include a conductive polymer. Localized presence or absence of localized disorder in the Langmuir-Blodgett layers may be used to detect data bits formed in the data storage medium. The presence or absence of one-dimensional conductivity in the organic material may also be used to read data bits formed in the data storage medium.Type: GrantFiled: April 23, 2003Date of Patent: June 6, 2006Assignee: Hewlett-Packard Development Company, L.P.Inventors: Henryk Birecki, Huei-Pei Kuo, Si-Ty Lam, Gary A. Gibson
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Publication number: 20050269286Abstract: The present invention provides a method of fabricating a nano-wire from a substrate. The method includes the step of etching the substrate to form a wire that projects from a surface of the etched substrate. The wire has a predetermined thickness. The method also includes the step of exposing side surface portions of the wire to a reactive gas to react material of the side portions with the reactive gas and form a reaction product. The method further includes the step of removing the reaction product to thin the wire below the predetermined thickness.Type: ApplicationFiled: June 8, 2004Publication date: December 8, 2005Inventors: Manish Sharma, Si-Ty Lam
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Patent number: 6960876Abstract: An electron emission device with nano-protrusions is described. Electrons are emitted from the nano-protrusions and directed by one or more conductors into beams. The beams may be shaped to be collimated, diverged, or converged. The shaped beams from one or more nano-protrusions may be focused onto a target spot through the use of additional electron optics.Type: GrantFiled: February 27, 2003Date of Patent: November 1, 2005Assignee: Hewlett-Packard Development Company, L.P.Inventors: Huei-Pei Kuo, Si-Ty Lam, Sam Burriesci, Steven Louis Naberhuis, Henryk Birecki, Xia Sheng
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Publication number: 20050156271Abstract: The present invention pertains to a data storage device. The data storage device includes a storage medium having an electrode and an electrolyte layer positioned on the electrode. The data storage device also includes at least one probe configured to contact the electrolyte layer. In addition, the storage medium includes a voltage supply device configured to supply voltage through the at least one probe and the electrode to thereby create a circuit between the at least one probe and the electrode. The level of voltage supplied through the at least one probe allows at least one of writing, reading, and erasing operations on the one or more memory cells of the storage medium.Type: ApplicationFiled: January 16, 2004Publication date: July 21, 2005Inventors: Si-Ty Lam, Steve Naberhuis
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Patent number: 6872964Abstract: The present disclosure relates to a data storage device, comprising a plurality of electron emitters adapted to emit electron beams, the electron emitters each having a planar emission surface, and a storage medium in proximity to the electron emitter, the storage medium having a plurality of storage areas that are capable of at least two distinct states that represent data, the state of the storage areas being changeable in response to bombardment by electron beams emitted by the electron emitters.Type: GrantFiled: August 20, 2003Date of Patent: March 29, 2005Assignee: Hewlett-Packard Development Company, L.P.Inventors: Steven L. Naberhuis, Huel-Pel Kuo, Si-Ty Lam, Henryk Birecki
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Publication number: 20050051764Abstract: A method is presented for forming pores within a central area of a semi-conductive or conductive surface. The method includes forming a semi-conductive or conductive surface on a substrate. This semi-conductive or conductive surface is formed in a manner ensuring that upon application of an electric field at the semi-conductive or conductive surface an intensity of the electric field at a central area of the surface is at least as great as an intensity of the electric field at a perimeter of the surface. Finally, the method includes anodizing the semi-conductive or conductive surface by generating the electric field at the semi-conductive or conductive surface to form a porous region within the semi-conductive or conductive surface.Type: ApplicationFiled: September 4, 2003Publication date: March 10, 2005Inventors: Huei-Pei Kuo, Xia Sheng, Henryk Birecki, Si-Ty Lam, Steven Naberhuis
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Patent number: 6864624Abstract: A field emission device, which among other things may be used within an ultra-high density storage system, is disclosed. The emitter device includes an emitter electrode, an extractor electrode, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier. The Schottky metal-semiconductor barrier is formed on the emitter electrode and electrically couples with the extractor electrode such that when an electric potential is placed between the emitter electrode and the extractor electrode, a field emission of electrons is generated from an exposed surface of the semiconductor layer. Further, the Schottky metal may be selected from typical conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier.Type: GrantFiled: October 30, 2003Date of Patent: March 8, 2005Assignee: Hewlett-Packard Development Company, L.P.Inventors: Henryk Birecki, Vu Thien Binh, Si-ty Lam, Huei Pei Kuo, Steven L. Naberhuis
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Publication number: 20050040383Abstract: The present disclosure relates to a data storage device, comprising a plurality of electron emitters adapted to emit electron beams, the electron emitters each having a planar emission surface, and a storage medium in proximity to the electron emitter, the storage medium having a plurality of storage areas that are capable of at least two distinct states that represent data, the state of the storage areas being changeable in response to bombardment by electron beams emitted by the electron emitters.Type: ApplicationFiled: August 20, 2003Publication date: February 24, 2005Inventors: Steven Naberhuis, Huel-Pel Kuo, Si-Ty Lam, Henry Birecki
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Publication number: 20050029920Abstract: A field emission device, which among other things may be used within an ultra-high density storage system, is disclosed. The emitter device includes an emitter electrode, an extractor electrode, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier. The Schottky metal-semiconductor barrier is formed on the emitter electrode and electrically couples with the extractor electrode such that when an electric potential is placed between the emitter electrode and the extractor electrode, a field emission of electrons is generated from an exposed surface of the semiconductor layer. Further, the Schottky metal may be selected from typical conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier.Type: ApplicationFiled: September 1, 2004Publication date: February 10, 2005Inventors: Henryk Birecki, Vu Binh, Si-ty Lam, Huei Kuo, Steven Naberhuis
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Publication number: 20050001530Abstract: An electron source includes a planar emission region for generating an electron emission, and a focusing structure for focusing the electron emission into an electron beam.Type: ApplicationFiled: July 14, 2004Publication date: January 6, 2005Inventors: Huei-Pei Kuo, Henryk Birecki, Si-Ty Lam, Steven Naberhuis
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Patent number: 6822380Abstract: In an electron emitter based on Metal-Insulator-Semiconductor or Metal-Insulator-Metal emitters, field emission structures are enclosed within the emitter structure. The electron emitter may include a conductive substrate and an electron supply layer formed on the conductive substrate. The electron supply layer, for example undoped polysilicon, has protrusions formed on its surface. The sharpness and density of protrusions may be controlled. Above the electron supply layer and the protrusions, an insulator may be formed thereby enclosing the protrusions. A top conductive layer may be formed above the insulator. The enclosed protrusions are relatively insensitive to vacuum contamination. The thinness of the insulator allows high intensity electric fields at the protrusions to be generated with low applied voltage. Field-enhanced injection of electrons into the insulator and thence through the top conductive layer results. Furthermore, electron beam dispersion and divergence are minimized.Type: GrantFiled: October 12, 2001Date of Patent: November 23, 2004Assignee: Hewlett-Packard Development Company, L.P.Inventors: Xia Sheng, Henryk Birecki, Si-Ty Lam, Huei-Pei Kuo, Steven Louis Naberhuis
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Patent number: 6815875Abstract: An electron source includes a planar emission region for generating an electron emission, and a focusing structure for focusing the electron emission into an electron beam.Type: GrantFiled: February 27, 2001Date of Patent: November 9, 2004Assignee: Hewlett-Packard Development Company, L.P.Inventors: Huei-Pei Kuo, Henryk Birecki, Si-Ty Lam, Steven Louis Naberhuis