Abstract: A junctionless accumulation-mode (JAM) semiconductive device is isolated from a semiconductive substrate by a reverse-bias band below a prominent feature of a JAM semiconductive body. Processes of making the JAM device include implantation and epitaxy.

Abstract: A junctionless accumulation-mode (JAM) semiconductive device is isolated from a semiconducive substrate by a reverse-bias band below a prominent feature of a JAM semiconductive body. Processes of making the JAM device include implantation and epitaxy.

Abstract: A junctionless accumulation-mode (JAM) semiconductive device is isolated from a semiconducive substrate by a reverse-bias band below a prominent feature of a JAM semiconductive body. Processes of making the JAM device include implantation and epitaxy.

Abstract: In general, in one aspect, the disclosure describes a simulator for emulating various types of device noise in time-domain circuit simulations. The simulator is capable of adding noise to transistors as well as passive elements like resistors. The simulator utilizes at least one current source in parallel to a device to emulate the noise. The current source generates a random current output to emulate the device noise based on a random Gaussian number and the standard deviation of the device noise. The noise standard deviation can be determined based on the noise power spectral density of the device having a particular bias at that simulation time and the update time. The simulator is capable of emulating any noise source with a constant or monotonically decreasing noise spectrum (e.g., thermal noise, flicker noise) by utilizing multiple current sources having different update steps. The simulator is compatible with standard circuit simulators.

Abstract: In general, in one aspect, the disclosure describes a simulator for emulating various types of device noise in time-domain circuit simulations. The simulator is capable of adding noise to transistors as well as passive elements like resistors. The simulator utilizes at least one current source in parallel to a device to emulate the noise. The current source generates a random current output to emulate the device noise based on a random Gaussian number and the standard deviation of the device noise. The noise standard deviation can be determined based on the noise power spectral density of the device having a particular bias at that simulation time and the update time. The simulator is capable of emulating any noise source with a constant or monotonically decreasing noise spectrum (e.g., thermal noise, flicker noise) by utilizing multiple current sources having different update steps. The simulator is compatible with standard circuit simulators.

Abstract: A method including forming a transistor structure structure comprising a gate electrode over an active region of a substrate, the active region defined by a trench isolation structure and changing a performance of a narrow width transistor with respect to a wide width transistor by introducing a dopant into the active region adjacent an interface defined by the trench isolation structure and the gate electrode. A structure including a gate electrode formed on a substrate, an active region adjacent an interface defined by a trench isolation structure and a gate electrode and an implant within the active region to change a performance of a transistor.