Patents by Inventor Siyu DENG

Siyu DENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polarization-doped enhancement mode HEMT
    Patent number: 10304931
    Abstract: The present invention belongs to the field of semiconductor technology and relates to a polarization-doped enhancement mode HEMT device. The technical solution of the present invention grows the first barrier layer and the second barrier layer that contain gradient Al composition sequentially on the buffer layer. The gradient trends of the two layers are opposite. The three-dimensional electron gas (3DEG) and the three-dimensional hole gas (3DHG) are induced and generated in the barrier layers due to the inner polarization difference respectively. A trench insulated gate structure is at one side of the source which is away from the metal drain and is in contact with the source. First, since the highly concentrated electrons exist in the entire first barrier layer, the on-state current is improved greatly. Second, the vertical conductive channel between the source and the 3DEG are pinched off by the 3DHG, so as to realize the enhancement mode.
    Type: Grant
    Filed: June 14, 2017
    Date of Patent: May 28, 2019
    Assignee: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
    Inventors: Xiaorong Luo, Fu Peng, Chao Yang, Jie Wei, Siyu Deng, Dongfa Ouyang, Bo Zhang
  • POLARIZATION-DOPED ENHANCEMENT MODE HEMT
    Publication number: 20180294335
    Abstract: The present invention belongs to the field of semiconductor technology and relates to a polarization-doped enhancement mode HEMT device. The technical solution of the present invention grows the first barrier layer and the second barrier layer that contain gradient Al composition sequentially on the buffer layer. The gradient trends of the two layers are opposite. The three-dimensional electron gas (3DEG) and the three-dimensional hole gas (3DHG) are induced and generated in the barrier layers due to the inner polarization difference respectively. A trench insulated gate structure is at one side of the source which is away from the metal drain and is in contact with the source. First, since the highly concentrated electrons exist in the entire first barrier layer, the on-state current is improved greatly. Second, the vertical conductive channel between the source and the 3DEG are pinched off by the 3DHG, so as to realize the enhancement mode.
    Type: Application
    Filed: June 14, 2017
    Publication date: October 11, 2018
    Applicant: University of Electronic Science and Technology of China
    Inventors: Xiaorong LUO, Fu PENG, Chao YANG, Jie WEI, Siyu DENG, Dongfa OUYANG, Bo ZHANG