Patents by Inventor Slawomir Skocki

Slawomir Skocki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8921969
    Abstract: A chip-scale schottky package which has at least one cathode electrode and at least one anode electrode disposed on only one major surface of a die, and solder bumps connected to the electrode for surface mounting of the package on a circuit board.
    Type: Grant
    Filed: October 18, 2006
    Date of Patent: December 30, 2014
    Assignee: Siliconix Technology C. V.
    Inventor: Slawomir Skocki
  • Patent number: 7821133
    Abstract: A flip chip Schottky die is provided, which includes three contact bumps extending from a top surface of the die for electrically connecting with a board, a first and second bump being cathode contacts, and a third bump being an anode contact and having a larger surface than each of the first and second bumps for a 0.5 ampere device. Each bump is substantially rectangular at its base, but may have a curved or arched top surface on a square die. Also, provided is a contact bump useful in a flip chip device, such as a MOSFET or diode for a current of 1.0 amperes that includes a solder body of PbSn or a solder body free of lead comprising SnAgCu. Such a contact bump is substantially rectangular, and a height of approximately 120 ?m.
    Type: Grant
    Filed: October 26, 2006
    Date of Patent: October 26, 2010
    Assignee: International Rectifier Corporation
    Inventors: Hazel D. Schofield, Slawomir Skocki, Philip Adamson
  • Publication number: 20070096316
    Abstract: A flip chip Schottky die is provided, which includes three contact bumps extending from a top surface of the die for electrically connecting with a board, a first and second bump being cathode contacts, and a third bump being an anode contact and having a larger surface than each of the first and second bumps for a 0.5 ampere device. Each bump is substantially rectangular at its base, but may have a curved or arched top surface on a square die. Also, provided is a contact bump useful in a flip chip device, such as a MOSFET or diode for a current of 1.0 amperes that includes a solder body of PbSn or a solder body free of lead comprising SnAgCu. Such a contact bump is substantially rectangular, and a height of approximately 120 ?m.
    Type: Application
    Filed: October 26, 2006
    Publication date: May 3, 2007
    Inventors: Hazel Schofield, Slawomir Skocki, Philip Adamson
  • Publication number: 20070034984
    Abstract: A chip-scale schottky package which has at least one cathode electrode and at least one anode electrode disposed on only one major surface of a die, and solder bumps connected to the electrode for surface mounting of the package on a circuit board.
    Type: Application
    Filed: October 18, 2006
    Publication date: February 15, 2007
    Inventor: Slawomir Skocki
  • Patent number: 7129558
    Abstract: A chip-scale schottky package which has at least one cathode electrode and at least one anode electrode disposed on only one major surface of a die, and solder bumps connected to the electrode for surface mounting of the package on a circuit board.
    Type: Grant
    Filed: November 6, 2002
    Date of Patent: October 31, 2006
    Assignee: International Rectifier Corporation
    Inventor: Slawomir Skocki
  • Publication number: 20040084770
    Abstract: A chip-scale schottky package which has at least one cathode electrode and at least one anode electrode disposed on only one major surface of a die, and solder bumps connected to the electrode for surface mounting of the package on a circuit board.
    Type: Application
    Filed: November 6, 2002
    Publication date: May 6, 2004
    Applicant: International Rectifier Corporation
    Inventor: Slawomir Skocki
  • Patent number: 6657273
    Abstract: A composite field ring for a Schottky diode has a low concentration deep portion to increase breakdown voltage withstand and a high concentration, shallow region to enable minority carrier injection during high forward current conduction. The composite ring permits a reduction in the thickness of the epitaxially formed layer which receives the Schottky barrier metal.
    Type: Grant
    Filed: June 12, 2002
    Date of Patent: December 2, 2003
    Assignee: International Rectifirer Corporation
    Inventor: Slawomir Skocki
  • Publication number: 20020190338
    Abstract: A composite field ring for a Schottky diode has a low concentration deep portion to increase breakdown voltage withstand and a high concentration, shallow region to enable minority carrier injection during high forward current conduction. The composite ring permits a reduction in the thickness of the epitaxially formed layer which receives the Schottky barrier metal.
    Type: Application
    Filed: June 12, 2002
    Publication date: December 19, 2002
    Applicant: International Rectifier Corp.
    Inventor: Slawomir Skocki