Patents by Inventor Smagul Karazhanov
Smagul Karazhanov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230119683Abstract: The present invention relates to a superconductive rare-earth metal oxyhydride material and a method for producing the material. The method comprising the steps of: —first the formation on a substrate of a layer of an oxygen free rare-earth metal hydride with a predetermined thickness using a physical vapor deposition process; and —second exposing the rare-earth metal hydride layer to oxidative agent for oxidation where the oxygen reacts with the rare-earth metal hydride that results with obtaining rare-earth metal oxyhydride, the oxidation being below a predetermined limit defined by a measured transparency being less than 10%.Type: ApplicationFiled: April 15, 2021Publication date: April 20, 2023Applicant: Institutt for EnergiteknikkInventors: Elbruz Murat BABA, Smagul KARAZHANOV
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Patent number: 11629286Abstract: Method for producing a photochromic material and a component including the photochromic material, where the method comprises the steps of:-first the formation on a substrate of a layer of an essentially oxygen free metal hydride with a predetermined thickness using a physical vapor deposition process; and -second exposing the metal hydride layer to oxygen where the oxygen reacts with the metal hydride, resulting in a material with photochromic properties.Type: GrantFiled: June 15, 2017Date of Patent: April 18, 2023Assignee: Institutt for EnergiteknikkInventors: Fredrik Aleksander Martinsen, José Montero Amenedo, Smagul Karazhanov, Erik Stensrud Marstein
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Patent number: 11525180Abstract: The present invention relates to a metal hydride device having a variable transparency, comprising a substrate, at least one layer including a photochromic yttrium hydride having a chosen band gap, and a capping layer at least partially positioned on the opposite side of the photochromic yttrium hydride layer from the substrate, said capping layer being essentially impermeable to hydrogen and oxygen.Type: GrantFiled: January 20, 2017Date of Patent: December 13, 2022Assignee: Institutt for EnergiteknikkInventors: Fredrik Aleksander Martinsen, José Montero Amenedo, Smagul Karazhanov, Trygve Tveiterås Mongstad, Erik Stensrud Marstein
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Publication number: 20220357491Abstract: The present invention relates to a method for producing a photochromic oxy-hydride material as well as a photochromic component. The method comprising the steps of: —first the formation on a substrate of a layer of an essentially oxygen free rare earth metal hydride with a predetermined thickness using a physical vapor deposition process; and—second exposing the metal hydride layer to oxygen where the oxygen reacts with the metal hydride, said second step being performed in an environment having a water content defined by a water amount in air at sea level pressure with RH between >0% and 100% RH for temperatures between 0° C. and 40° C., preferably 25° Celsius.Type: ApplicationFiled: July 6, 2020Publication date: November 10, 2022Applicant: Institutt for EnergiteknikkInventors: Elbruz Murat BABA, Smagul KARAZHANOV
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Patent number: 10811558Abstract: A relevant technological challenge is the low cost and abundant materials development for silicon surface passivation for applications in optoelectronic devices, in particular in solar cells by scalable industrial methods. In the present invention, a new hybrid material comprising PEDOT:PSS and transparent conducting oxide nanostructures is developed and a method is proposed to fabricate the composite material that passivates well the silicon surface to be used by means of a thin composite film of thickness below 200 nm.Type: GrantFiled: June 22, 2017Date of Patent: October 20, 2020Assignees: INSTITUTT FOR ENERGITEKNIKK, UNIVERSIDAD COMPLUTENSE DE MADRIDInventors: Ana Cremades Rodriguez, Chang Chuan You, David Maestre Varea, Erik Stensrud Marstein, Geraldo Cristian Vasquez Villanueva, Halvard Haug, Javier Piqueres De Noriega, Jose Maria Gonzalez Calbet, Julio Ramirez Castellanos, Maria Taeno Gonzalez, Miguel Garcia Tecedor, Smagul Karazhanov
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Patent number: 10461160Abstract: This invention relates to an electronic semiconductive component comprising at least one layer (2,3) of a p-type or n-type material, wherein the layer of a said p- or n-type material is constituted by a metal hydride having a chosen dopant. The invention also relates to methods for producing the component.Type: GrantFiled: March 28, 2016Date of Patent: October 29, 2019Assignee: INSTITUTT FOR ENERGITEKNIKKInventors: Alexander G. Ulyashin, Smagul Karazhanov, Arve Holt
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Publication number: 20190319161Abstract: A relevant technological challenge is the low cost and abundant materials development for silicon surface passivation for applications in optoelectronic devices, in particular in solar cells by scalable industrial methods. In the present invention, a new hybrid material comprising PEDOT:PSS and transparent conducting oxide nanostructures is developed and a method is proposed to fabricate the composite material that passivates well the silicon surface to be used by means of a thin composite film of thickness below 200 nm.Type: ApplicationFiled: June 22, 2017Publication date: October 17, 2019Applicants: Institutt for Energiteknikk, Universidad Complutense de MadridInventors: Ana CREMADES RODRIGUEZ, Chang Chuan YOU, David MAESTRE VAREA, Erik STENSRUD MARSTEIN, Geraldo Cristian VASQUEZ VILLANUEVA, Halvard HAUG, Javier PIQUERES DE NORIEGA, Jose Maria GONZALEZ CALBET, Julio RAMIREZ CASTELLANOS, Maria TAENO GONZALEZ, Miguel GARCIA TECEDOR, Smagul KARAZHANOV
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Publication number: 20190169493Abstract: Method for producing a photochromic material and a component including the photochromic material, where the method comprises the steps of:—first the formation on a substrate of a layer of an essentially oxygen free metal hydride with a predetermined thickness using a physical vapor deposition process; and—second exposing the metal hydride layer to oxygen where the oxygen reacts with the metal hydride, resulting in a material with photochromic properties.Type: ApplicationFiled: June 15, 2017Publication date: June 6, 2019Applicant: Institutt for EnergiteknikkInventors: Fredrik Aleksander MARTINSEN, José Montero AMENEDO, Smagul KARAZHANOV, Erik Stensrud MARSTEIN
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Publication number: 20190002340Abstract: The present invention relates to a metal hydride device having a variable transparency, comprising a substrate, at least one layer including a photochromic yttrium hydride having a chosen band gap, and a capping layer at least partially positioned on the opposite side of the photochromic yttrium hydride layer from the substrate, said capping layer being essentially impermeable to hydrogen and oxygen.Type: ApplicationFiled: January 20, 2017Publication date: January 3, 2019Applicant: Institutt for EnergiteknikkInventors: Fredrik Aleksander MARTINSEN, José Montero AMENEDO, Smagul KARAZHANOV, Trygve Tveiterås MONGSTAD, Erik Stensrud MARSTEIN
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Patent number: 9461123Abstract: This invention relates to an electronic semiconductive component comprising at least one layer (2,3) of a p-type or n-type material, wherein the layer of a said p- or n-type material is constituted by a metal hydride having a chosen dopant. The invention also relates to methods for producing the component.Type: GrantFiled: February 9, 2009Date of Patent: October 4, 2016Assignee: INSTITUTT FOR ENERGITEKNIKKInventors: Alexander G. Ulyashin, Smagul Karazhanov
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Publication number: 20160211391Abstract: This invention relates to an electronic semiconductive component comprising at least one layer (2,3) of a p-type or n-type material, wherein the layer of a said p- or n-type material is constituted by a metal hydride having a chosen dopant. The invention also relates to methods for producing the component.Type: ApplicationFiled: March 28, 2016Publication date: July 21, 2016Inventors: Alexander G. ULYASHIN, Smagul KARAZHANOV, Arve HOLT
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Publication number: 20100319760Abstract: This invention relates to an electronic semiconductive component comprising at least one layer (2,3) of a p-type or n-type material, wherein the layer of a said p- or n-type material is constituted by a metal hydride having a chosen dopant. The invention also relates to methods for producing the component.Type: ApplicationFiled: February 9, 2009Publication date: December 23, 2010Inventors: Alexander G. Ulyashin, Smagul Karazhanov, Arve Holt