Patents by Inventor So-Ra Han
So-Ra Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11974901Abstract: Disclosed is a small animal intraventricular injection compensator for injecting a drug into a desired location through a syringe, the compensator including: a guide part provided with a guide hole into which a needle of a syringe is inserted; a body comprising an upper cavity provided inside thereof and a cradle provided to seat the guide part on an upper side thereof; and a fixation part integrally provided with the body or separately provided, and comprising a lower cavity provided to allow a head accommodation space, which a head of a small animal may enter into or exit from, to be provided inside thereof by corresponding to the upper cavity.Type: GrantFiled: July 18, 2019Date of Patent: May 7, 2024Assignees: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGYInventors: Sung Gurl Park, Kang Hyun Han, Chang Mook Lim, So Ra Park, Hong Su Lee, Jae Bong Lee, Jung Ho Noh, Sang Seop Han
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Patent number: 9837272Abstract: In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.Type: GrantFiled: April 6, 2016Date of Patent: December 5, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Su-Min Park, Su-Min Kim, Hyo-Jin Yun, Hyun-Woo Kim, Kyoung-Seon Kim, Hai-Sub Na, Min-Ju Park, So-Ra Han
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Patent number: 9773672Abstract: A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.Type: GrantFiled: February 5, 2016Date of Patent: September 26, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Su-min Kim, Hyun-woo Kim, Hyo-jin Yun, Kyoung-seon Kim, Hai-sub Na, Su-min Park, So-ra Han
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Patent number: 9570304Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an anti-reflection layer on a lower layer, forming photoresist patterns on the anti-reflection layer, forming protection patterns to cover the photoresist patterns, respectively, etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns, forming spacers to cover sidewalls of the anti-reflection patterns, and removing the anti-reflection patterns.Type: GrantFiled: December 10, 2015Date of Patent: February 14, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Min Ju Park, Haisub Na, Hyojin Yun, Kyoungseon Kim, Su Min Kim, Hyunwoo Kim, Su-min Park, So-Ra Han
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Publication number: 20160314970Abstract: In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.Type: ApplicationFiled: April 6, 2016Publication date: October 27, 2016Inventors: SU-MIN PARK, SU-MIN KIM, HYO-JIN YUN, HYUN-WOO KIM, KYOUNG-SEON KIM, HAI-SUB NA, MIN-JU PARK, SO-RA HAN
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Publication number: 20160293417Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an anti-reflection layer on a lower layer, forming photoresist patterns on the anti-reflection layer, forming protection patterns to cover the photoresist patterns, respectively, etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns, forming spacers to cover sidewalls of the anti-reflection patterns, and removing the anti-reflection patterns.Type: ApplicationFiled: December 10, 2015Publication date: October 6, 2016Inventors: Min Ju Park, Haisub Na, Hyojin Yun, Kyoungseon Kim, Su Min Kim, Hyunwoo Kim, Su Min Park, So-Ra Han
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Publication number: 20160233083Abstract: A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.Type: ApplicationFiled: February 5, 2016Publication date: August 11, 2016Inventors: Su-min KIM, Hyun-woo KIM, Hyo-jin YUN, Kyoung-seon KIM, Hai-sub NA, Su-min PARK, So-ra HAN
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Patent number: 8623739Abstract: A method of manufacturing a semiconductor device includes forming a resist pattern on a first region on a substrate, bringing a descum solution including an acid source into contact with the resist pattern and with a second region of the substrate, decomposing resist residues remaining on the second region of the substrate by using acid obtained from the acid source in the descum solution and removing the decomposed resist residues and the descum solution from the substrate.Type: GrantFiled: July 19, 2011Date of Patent: January 7, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Hyung-rae Lee, Yool Kang, Kyung-hwan Yoon, Hyoung-hee Kim, So-ra Han, Tae-hoi Park
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Patent number: 8314036Abstract: A method of forming fine patterns of a semiconductor device is provided. The method includes forming plural preliminary first mask patterns, which are spaced apart from each other by a first distance in a direction parallel to a surface of a substrate, on the substrate; forming an acid solution layer on the substrate to cover the plural preliminary first mask patterns; forming plural first mask patterns which are spaced apart from each other by a second distance larger than the first distance, of which upper and side portions are surrounded by acid diffusion regions having first solubility; exposing the first acid diffusion regions by removing the acid solution layer; forming a second mask layer having second solubility lower than the first solubility in spaces between the acid diffusion regions; and forming plural second mask patterns located between the plural first mask patterns, respectively, by removing the acid diffusion regions by the dissolvent.Type: GrantFiled: June 7, 2010Date of Patent: November 20, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Seongho Moon, Yool Kang, HyoungHee Kim, Seokhwan Oh, So-Ra Han, Seongwoon Choi
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Patent number: 8227349Abstract: A method of forming a mask pattern, a method of forming a minute pattern, and a method of manufacturing a semiconductor device using the same, the method of forming the mask pattern including forming first mask patterns on a substrate; forming first preliminary capping layers on the first mask patterns; irradiating energy to the first preliminary capping patterns to form second preliminary capping layers ionically bonded with the first mask patterns; applying an acid to the second preliminary capping layers to form capping layers; forming a second mask layer between the capping layers, the second mask layer having a solubility lower than that of the capping layers; and removing the capping layers to form second mask patterns.Type: GrantFiled: September 1, 2010Date of Patent: July 24, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Hyoung-Hee Kim, Yool Kang, Seong-Ho Moon, Seok-Hwan Oh, So-Ra Han, Seong-Woon Choi
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Methods of forming a hole having a vertical profile and semiconductor devices having a vertical hole
Patent number: 8211804Abstract: In a method of forming a hole, an insulation layer is formed on a substrate, and a preliminary hole exposing the substrate is formed through the insulation layer. A photosensitive layer pattern including an organic polymer is then formed on the substrate to fill the preliminary hole. An etching gas including hydrogen fluoride (HF) or fluorine (F2) is then provided onto the photosensitive layer pattern to etch the insulation layer so that width of the preliminary hole is increased.Type: GrantFiled: February 11, 2011Date of Patent: July 3, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Hyo-San Lee, Bo-Un Yoon, Kun-Tack Lee, Dae-Hyuk Kang, Seong-Ho Moon, So-Ra Han -
Publication number: 20120028434Abstract: A method of manufacturing a semiconductor device includes forming a resist pattern on a first region on a substrate, bringing a descum solution including an acid source into contact with the resist pattern and with a second region of the substrate, decomposing resist residues remaining on the second region of the substrate by using acid obtained from the acid source in the descum solution and removing the decomposed resist residues and the descum solution from the substrate.Type: ApplicationFiled: July 19, 2011Publication date: February 2, 2012Inventors: Hyung-rae LEE, Yool Kang, Kyung-hwan Yoon, Hyoung-hee Kim, So-ra Han, Tae-hoi Park
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Publication number: 20110244689Abstract: A method of manufacturing a semiconductor device includes forming a first mask pattern on a substrate by using a material including a polymer having a protection group de-protectable by an acid, the first mask pattern having a plurality of holes; forming a capping layer on an exposed surface of the first mask pattern, the capping layer including an acid source; diffusing the acid source into the first mask pattern so that the protection group becomes de-protectable from the polymer in the first mask pattern; forming a second mask layer on the capping layer, the second mask layer separate from the first mask pattern and filling the plurality of holes in the first mask pattern; and forming a plurality of second mask patterns in the plurality of holes by removing the capping layer and the first mask pattern.Type: ApplicationFiled: March 31, 2011Publication date: October 6, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: So-ra Han, Yool Kang, Seong-ho Moon, Kyung-hwan Yoon, Hyoung-hee Kim, Seong-woon Choi, Seok-hwan Oh
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METHODS OF FORMING A HOLE HAVING A VERTICAL PROFILE AND SEMICONDUCTOR DEVICES HAVING A VERTICAL HOLE
Publication number: 20110201203Abstract: In a method of forming a hole, an insulation layer is formed on a substrate, and a preliminary hole exposing the substrate is formed through the insulation layer. A photosensitive layer pattern including an organic polymer is then formed on the substrate to fill the preliminary hole. An etching gas including hydrogen fluoride (HF) or fluorine (F2) is then provided onto the photosensitive layer pattern to etch the insulation layer so that width of the preliminary hole is increased.Type: ApplicationFiled: February 11, 2011Publication date: August 18, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyo-San Lee, Bo-Un Yoon, Kun-Tack Lee, Dae-Hyuk Kang, Seong-Ho Moon, So-Ra Han -
Publication number: 20110053362Abstract: A method of forming a mask pattern, a method of forming a minute pattern, and a method of manufacturing a semiconductor device using the same, the method of forming the mask pattern including forming first mask patterns on a substrate; forming first preliminary capping layers on the first mask patterns; irradiating energy to the first preliminary capping patterns to form second preliminary capping layers ionically bonded with the first mask patterns; applying an acid to the second preliminary capping layers to form capping layers; forming a second mask layer between the capping layers, the second mask layer having a solubility lower than that of the capping layers; and removing the capping layers to form second mask patterns.Type: ApplicationFiled: September 1, 2010Publication date: March 3, 2011Inventors: Hyoung-Hee KIM, Yool Kang, Seong-Ho Moon, Seok-Hwan Oh, So-Ra Han, Seong-Woon Choi
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Publication number: 20110027993Abstract: A method of forming fine patterns of a semiconductor device is provided. The method includes forming plural preliminary first mask patterns, which are spaced apart from each other by a first distance in a direction parallel to a surface of a substrate, on the substrate; forming an acid solution layer on the substrate to cover the plural preliminary first mask patterns; forming plural first mask patterns which are spaced apart from each other by a second distance larger than the first distance, of which upper and side portions are surrounded by acid diffusion regions having first solubility; exposing the first acid diffusion regions by removing the acid solution layer; forming a second mask layer having second solubility lower than the first solubility in spaces between the acid diffusion regions; and forming plural second mask patterns located between the plural first mask patterns, respectively, by removing the acid diffusion regions by the dissolvent.Type: ApplicationFiled: June 7, 2010Publication date: February 3, 2011Inventors: Seongho Moon, Yool Kang, HyoungHee Kim, Seokhwan Oh, So-Ra Han, Seongwoon Choi