Abstract: A display apparatus including a circuit board and a plurality of pixels arranged on the circuit board, in which at least one of the pixels includes a first light emitting device and a second light emitting device spaced apart from each other in a lateral direction, the first light emitting device includes a first LED stack configured to generate light having a first peak wavelength; and the second light emitting device includes a second LED stack configured to generate light having a second peak wavelength, and a third LED stack disposed on the second LED stack and configured to generate light having a third peak wavelength.

Abstract: A display apparatus includes a display substrate, first micro LED modules arranged on the display substrate, and at least one second micro LED module disposed between the first micro LED modules. Each of the first micro LED modules includes a first substrate and micro LEDs disposed on the first substrate. The second micro LED module includes a second substrate and micro LEDs disposed on the second substrate. The second substrate bridges two adjacent first substrates.

Abstract: A light emitting device for a display including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and having a side surface exposing the active layer, in which a portion of the second conductivity type semiconductor layer and the active layer along an edge of the light emitting structure is insulative in a thickness direction to define an insulation region, and the insulation region includes implanted ions.

Abstract: A display apparatus includes a display substrate, and light emitting devices arranged on an upper surface of the display substrate. At least one of the light emitting devices includes a first LED unit including a first light emitting stack, a second LED unit including a second light emitting stack, and a third LED unit including a third light emitting stack. Each of the first to third light emitting stacks includes a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. the first conductivity type semiconductor layer and the second conductivity type semiconductor layer in each of the first to third light emitting stacks are stacked in a horizontal direction with respect to the upper surface of the display substrate. At least one of the second conductivity type semiconductor layers in the first to third light emitting stacks is divided into two regions.

Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on a driving current.

Abstract: Provided are a method of detecting chromosomal aneuploidy of a targeted fetal chromosome, and a computer-readable medium having recorded thereon a program to be applied to performing the method. According to the present disclosure, fetal chromosomal aneuploidy may be non-invasively and prenatally diagnosed with excellent sensitivity and specificity.

Abstract: A light emitting device for a display including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and having a side surface exposing the active layer, in which a portion of the second conductivity type semiconductor layer and the active layer along an edge of the light emitting structure is insulative in a thickness direction to define an insulation region, and the insulation region includes implanted ions.

Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on an driving current.

Abstract: A light emitting module including a substrate, a plurality of light emitting devices disposed on the substrate and configured to emit light of a first wavelength, a partition structure formed between the light emitting devices, and a wavelength converter configured to convert light of the first wavelength emitted from the light emitting devices into light of another wavelength, the wavelength converter including a first layer including a light absorption layer and a first wavelength conversion portion and a second layer including a light absorption layer and a second wavelength conversion portion, in which the first wavelength conversion portion in the first layer is laterally spaced apart from the second wavelength conversion portion in the second layer in plan view.

Abstract: A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer disposed on the n-type nitride semiconductor layer and having V-pits, an active layer disposed on the V-pit generation layer and including a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer, a p-type nitride semiconductor layer disposed on the active layer and a sub-emission layer interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and disposed near the active layer. The sub-emission layer may emit light having a peak wavelength within a range of wavelengths shorter than a peak wavelength of the first well region, and light emitted from the light emitting diode is within a range of 0.205?X?0.495 and 0.265?Y?0.450 in CIE color coordinates (X, Y).

Abstract: A cylindrical lithium secondary battery according to the present invention can reduce gas explosion by preventing gas concentration from being concentrated only on the upper top cap vent by increasing the gas spouting passage through which the inner gas of the can is spouted by forming a rupture portion of a material different from that of the can member on a part of the cylindrical can member, and when the inside or outside of the battery is exposed to a high temperature, by making, a shape-based alloy member, which causes cracking of the can member by deformation, included a part of the can member, the gas is discharged through the can vent by the cracking of the can member to prevent explosion before the tap cap safety vent operates by the internal air pressure, and ignition that may be caused by heating by internal or external heat may be prevented.

Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.