Patents by Inventor Sofiane Soukane

Sofiane Soukane has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10099948
    Abstract: This disclosure includes disinfection reactors and processes for the disinfection of water. Some disinfection reactors include a body that defines an inlet, an outlet, and a spiral flow path between the inlet and the outlet, in which the body is configured to receive water and a disinfectant at the inlet such that the water is exposed to the disinfectant as the water flows through the spiral flow path. Also disclosed are processes for disinfecting water in such disinfection reactors.
    Type: Grant
    Filed: February 20, 2015
    Date of Patent: October 16, 2018
    Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Noreddine Ghaffour, Fariza Ait-Djoudi, Wahib Mohamed Naceur, Sofiane Soukane
  • Publication number: 20150232355
    Abstract: This disclosure includes disinfection reactors and processes for the disinfection of water. Some disinfection reactors include a body that defines an inlet, an outlet, and a spiral flow path between the inlet and the outlet, in which the body is configured to receive water and a disinfectant at the inlet such that the water is exposed to the disinfectant as the water flows through the spiral flow path. Also disclosed are processes for disinfecting water in such disinfection reactors.
    Type: Application
    Filed: February 20, 2015
    Publication date: August 20, 2015
    Inventors: Noreddine GHAFFOUR, Fariza AIT-DJOUDI, Wahib Mohamed NACEUR, Sofiane SOUKANE
  • Patent number: 6936183
    Abstract: A two-step method of releasing microelectromechanical devices from a substrate is disclosed. The first step comprises isotropically etching a silicon oxide layer sandwiched between two silicon-containing layers with a gaseous hydrogen fluoride-water mixture, the overlying silicon layer to be separated from the underlying silicon layer or substrate for a time sufficient to form an opening but not to release the overlying layer, and the second step comprises adding a drying agent to substitute for moisture remaining in the opening and to dissolve away any residues in the opening that can cause stiction.
    Type: Grant
    Filed: October 8, 2002
    Date of Patent: August 30, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Jeffrey D. Chinn, Sofiane Soukane
  • Patent number: 6666979
    Abstract: The present invention pertains to a method of fabricating a surface within a MEM which is free moving in response to stimulation. The free moving surface is fabricated in a series of steps which includes a release method, where release is accomplished by a plasmaless etching of a sacrificial layer material. An etch step is followed by a cleaning step in which by-products from the etch step are removed along with other contaminants which may lead to stiction. There are a series of etch and then clean steps so that a number of “cycles” of these steps are performed. Between each etch step and each clean step, the process chamber pressure is typically abruptly lowered, to create turbulence and aid in the removal of particulates which are evacuated from the structure surface and the process chamber by the pumping action during lowering of the chamber pressure. The final etch/clean cycle may be followed by a surface passivation step in which cleaned surfaces are passivated and/or coated.
    Type: Grant
    Filed: October 29, 2001
    Date of Patent: December 23, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Jeffrey D. Chinn, Vidyut Gopal, Sofiane Soukane, Toi Yue Becky Leung
  • Publication number: 20030080082
    Abstract: The present invention pertains to a method of fabricating a surface within a MEM which is free moving in response to stimulation. The free moving surface is fabricated in a series of steps which includes a release method, where release is accomplished by a plasmaless etching of a sacrificial layer material. An etch step is followed by a cleaning step in which by-products from the etch step are removed along with other contaminants which may lead to stiction. There are a series of etch and then clean steps so that a number of “cycles” of these steps are performed. Between each etch step and each clean step, the process chamber pressure is typically abruptly lowered, to create turbulence and aid in the removal of particulates which are evacuated from the structure surface and the process chamber by the pumping action during lowering of the chamber pressure. The final etch/clean cycle may be followed by a surface passivation step in which cleaned surfaces are passivated and/or coated.
    Type: Application
    Filed: October 29, 2001
    Publication date: May 1, 2003
    Inventors: Jeffrey D. Chinn, Vidyut Gopal, Sofiane Soukane, Toi Yue Becky Leung
  • Publication number: 20030071015
    Abstract: A two-step method of releasing microelectromechanical devices from a substrate is disclosed. The first step comprises isotropically etching a silicon oxide layer sandwiched between two silicon-containing layers with a gaseous hydrogen fluoride-water mixture, the overlying silicon layer to be separated from the underlying silicon layer or substrate for a time sufficient to form an opening but not to release the overlying layer, and the second step comprises adding a drying agent to substitute for moisture remaining in the opening and to dissolve away any residues in the opening that can cause stiction.
    Type: Application
    Filed: October 8, 2002
    Publication date: April 17, 2003
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Jeffrey D. Chinn, Sofiane Soukane