Abstract: A perfusion device and a perfusion method can allocate two routes of perfusate inflow pathways and two routes of perfusate outflow pathways for a liver graft. The perfusate inflow pathways have perfusate inflow cannulas connected respectively to the portal vein and the hepatic artery. The perfusate outflow pathways have perfusate outflow cannulas connected respectively to the suprahepatic inferior vena cava and the infrahepatic inferior vena cava. Perfusate is allowed to enter the liver from the perfusate inflow cannulas, and the perfusate in the liver is allowed to drain off from the perfusate outflow cannulas. This significantly shortens the time length of the liver graft being in an ischemic condition when the liver is removed or transplanted. That is, the onset of disorder in the liver graft can be suppressed. This increases the success rate of liver transplantation. Thus, deterioration of organ grafts during surgery is prevented in organ transplantation surgery that requires long hours.

Abstract: Disclosed is a substrate treating apparatus including the following units: a supplying unit which supplies a process liquid including a sublimable substance in a melt state on a pattern-formed surface of a substrate W; a solidifying unit which solidifies the process liquid on the pattern-formed surface to produce a solidified body; and a sublimating unit which sublimates the solidified body to remove the solidified body from the pattern-formed surface. In this apparatus, the sublimable substance includes a fluorinated carbon compound.

Abstract: Disclosed is a substrate treating apparatus including the following units: a supplying unit which supplies a process liquid including a sublimable substance in a melt state on a pattern-formed surface of a substrate W; a solidifying unit which solidifies the process liquid on the pattern-formed surface to produce a solidified body; and a sublimating unit which sublimates the solidified body to remove the solidified body from the pattern-formed surface. In this apparatus, the sublimable substance includes a fluorinated carbon compound.

Abstract: A substrate treatment apparatus includes a substrate holding mechanism which holds a substrate, a scrub brush for scrubbing a surface of the substrate held by the substrate holding mechanism to remove foreign matter from the substrate surface, a treatment liquid supplying mechanism which supplies an alkaline treatment liquid to the substrate surface when the substrate is scrubbed with the scrub brush, and an alkaline fluid supplying mechanism which supplies an alkaline fluid to a surface of the scrub brush in a standby period during which no substrate is scrubbed with the scrub brush.

Abstract: An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.

Abstract: An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.

Abstract: A semiconductor wafer has a bevel contour formed along the periphery thereof, products formed on the wafer, and an ID mark formed on the bevel contour. The ID mark shows at least the properties, manufacturing conditions, and test results of the products.

Abstract: A substrate processing apparatus of the invention includes: a substrate holding unit that holds a substrate almost in a horizontal posture; a rotating unit that rotates the substrate held by the substrate holding unit about a vertical shaft line; and an etching liquid nozzle disposed oppositely to a bottom surface of the substrate held by the substrate holding unit and having plural discharge ports each having a different distance from a rotation center of the substrate rotated by the rotating unit so as to discharge an etching liquid toward the bottom surface of the substrate rotated by the rotating unit from the plural discharge ports.

Abstract: In a small scaled plant intended for flexible manufacturing, a pure water supply system is provided at a low cost without reducing a production efficiency. A pure water system produces a plurality of grades of pure water which are supplied through pipes connected to points of use for cleaning, CMP, lithography, and the like. Upon receipt of a request signal from each point of use for starting to use a certain grade of pure water, a controller determines whether or not a required amount exceeds the capacity of the grade of pure water which can be supplied by the pure water system. If not, the controller sends a use permission signal to the point of use for permitting the same to use the pure water. When a certain use point is using the requested grade of pure water, the controller may not permit the requesting point of use to use the pure water until a use end signal is sent from the use point which is using the pure water.

Abstract: An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.

Abstract: A semiconductor wafer includes (a) a first principal side and a second principal side opposite to each other, (b) a first bevel contour and a second bevel contour provided at an outer periphery of the first principal side and the second principal side, (c) a first recess formed in the first bevel contour, and (d) a first type of ID mark configured by a protruding dot provided on a bottom face of the first recess.

Abstract: A semiconductor wafer includes (a) a first principal side and a second principal side opposite to each other, (b) a first bevel contour and a second bevel contour provided at an outer periphery of the first principal side and the second principal side, (c) a first recess formed in the first bevel contour, and (d) a first type of ID mark configured by a protruding dot provided on a bottom face of the first recess.

Abstract: A substrate treatment apparatus includes a substrate holding mechanism which holds a substrate, a scrub brush for scrubbing a surface of the substrate held by the substrate holding mechanism to remove foreign matter from the substrate surface, a treatment liquid supplying mechanism which supplies an alkaline treatment liquid to the substrate surface when the substrate is scrubbed with the scrub brush, and an alkaline fluid supplying mechanism which supplies an alkaline fluid to a surface of the scrub brush in a standby period during which no substrate is scrubbed with the scrub brush.

Abstract: A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.

Abstract: A semiconductor wafer has a bevel contour formed along the periphery thereof, products formed on the wafer, and an ID mark formed on the bevel contour. The ID mark shows at least the properties, manufacturing conditions, and test results of the products.

Abstract: A semiconductor wafer includes (a) a first principal side and a second principal side opposite to each other, (b) a first bevel contour and a second bevel contour provided at an outer periphery of the first principal side and the second principal side, (c) a first recess formed in the first bevel contour, and (d) a first type of ID mark configured by a protruding dot provided on a bottom face of the first recess.

Abstract: A holding unit holds a substrate to enable a surface of the substrate to be processed. The unit has a vacuum suction member that comes into contact with a peripheral portion of the surface of the substrate and sucks the substrate. A processing apparatus holds the wafer stably and allows an edge, a bevel portion and/or a back surface of the wafer to be processed.

Abstract: A semiconductor wafer has a bevel contour formed along the periphery thereof, products formed on the wafer, and an ID mark formed on the bevel contour. The ID mark shows at least the properties, manufacturing conditions, and test results of the products.

Abstract: A semiconductor wafer includes (a) a first principal side and a second principal side opposite to each other, (b) a first bevel contour and a second bevel contour provided at an outer periphery of the first principal side and the second principal side, (c) a first recess formed in the first bevel contour, and (d) a first type of ID mark configured by a protruding dot provided on a bottom face of the first recess.

Abstract: An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.