Abstract: The embodiments provides an improved tungsten silicide etching process with reduced etch rate micro-loading effect. In one embodiment, a method for etching a layer formed on a substrate is provided. The method includes providing a substrate into a plasma processing chamber, the substrate having a metal silicide layer formed thereon and a patterned mask defined over the metal silicide layer. The method also includes supplying an etching gas mixture of a fluorine-containing gas, a chlorine-containing gas, a nitrogen-containing gas, and an oxygen-containing gas to the plasma processing chamber, wherein the ratio of the nitrogen-containing gas to the fluorine-containing gas is between about 5 to about 15.

Abstract: A method of removing a set of particles from a set of structures including yttrium oxide is disclosed. The method includes exposing the set of structures to a first solution including an oxidizer for a first period. The method also includes removing the set of structures from the first solution, and exposing the set of structures to a second solution including a keytone reagent for a second period. The method further includes removing the set of structures from the second solution, and mechanically rubbing the set of structures with a third solution including a first set of acids for a third period.