Patents by Inventor Sok-Won Lee

Sok-Won Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9318419
    Abstract: Conductive line structures, and methods of forming the same, include first and second pattern structures, insulation layer patterns and an insulating interlayer. The first pattern structure includes a conductive line pattern and a hard mask stacked, and extends in a first direction. The second pattern structure includes a second conductive line pattern and another hard mask stacked, and at least a portion of the pattern structure extends in the first direction. The insulation layer patterns contact end portions of the pattern structures. The first pattern structure and an insulation layer pattern form a closed curve shape in plan view, and the second pattern structure and another insulation layer pattern form another closed curve shape in plan view. The insulating interlayer covers upper portions of the pattern structures and the insulation layer patterns, an air gap between the pattern structures, and another air gap between the insulation layer patterns.
    Type: Grant
    Filed: November 4, 2014
    Date of Patent: April 19, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sok-Won Lee, Joon-Hee Lee, Jung-Dal Choi, Seong-Min Jo
  • Publication number: 20150061132
    Abstract: Conductive line structures, and methods of forming the same, include first and second pattern structures, insulation layer patterns and an insulating interlayer. The first pattern structure includes a conductive line pattern and a hard mask stacked, and extends in a first direction. The second pattern structure includes a second conductive line pattern and another hard mask stacked, and at least a portion of the pattern structure extends in the first direction. The insulation layer patterns contact end portions of the pattern structures. The first pattern structure and an insulation layer pattern form a closed curve shape in plan view, and the second pattern structure and another insulation layer pattern form another closed curve shape in plan view. The insulating interlayer covers upper portions of the pattern structures and the insulation layer patterns, an air gap between the pattern structures, and another air gap between the insulation layer patterns.
    Type: Application
    Filed: November 4, 2014
    Publication date: March 5, 2015
    Inventors: Sok-Won LEE, Joon-Hee LEE, Jung-Dal CHOI, Seong-Min JO
  • Patent number: 8884377
    Abstract: In one embodiment, first and second pattern structures respectively include first and second conductive line patterns and first and second hard masks sequentially stacked, and at least portions thereof extends in a first direction. The insulation layer patterns contact end portions of the first and second pattern structures. The first pattern structure and a first insulation layer pattern of the insulation layer patterns form a first closed curve shape in plan view, and the second pattern structure and a second insulation layer pattern of the insulation layer patterns form a second closed curve shape in plan view. The insulating interlayer covers upper portions of the first and second pattern structures and the insulation layer patterns, a first air gap between the first and second pattern structures, and a second air gap between the insulation layer patterns.
    Type: Grant
    Filed: February 18, 2013
    Date of Patent: November 11, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sok-Won Lee, Joon-Hee Lee, Jung-Dal Choi, Seong-Min Jo