Patents by Inventor Son T. Nguyen

Son T. Nguyen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240115375
    Abstract: A prosthetic heart valve includes an annular frame that is radially collapsible and expandable between a radially collapsed configuration and a radially expanded configuration. The frame has a plurality of circumferentially extending rows of angled struts, each row of angled struts comprising angled struts arranged in a zig-zag pattern. The prosthetic heart valve further includes a leaflet structure positioned within the frame and secured thereto, and an outer sealing member mounted outside of the frame. The sealing member has an undulating outflow edge portion forming a plurality of triangular projections that are connected to and shaped to correspond to the zig-zag pattern of one of the rows of angled struts. The outer sealing member is sized to fit snugly against the outer surface of the frame when the frame is in the expanded configuration.
    Type: Application
    Filed: December 15, 2023
    Publication date: April 11, 2024
    Inventors: Lien Huong Thi Hoang, Son V. Nguyen, Hien Tran Ngo, Vivian Tran, Russell T. Joseph, Dinesh L. Sirimanne, Kevin D. Rupp, Diana Nguyen-Thien-Nhon
  • Publication number: 20230290616
    Abstract: Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a showerhead. The chambers may include a substrate support. The substrate support may include a platen characterized by a first surface facing the showerhead. The substrate support may include a shaft coupled with the platen along a second surface of the platen opposite the first surface of the platen. The shaft may extend at least partially through the chamber body. A coating may extend conformally about the first surface of the platen. The coating may include a first layer of silicon proximate the first surface of the platen, and may include a second layer of material overlying the first layer of silicon.
    Type: Application
    Filed: March 11, 2022
    Publication date: September 14, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Laksheswar Kalita, Joseph F. Behnke, Deepak Doddabelavangala Srikantaia, Son T. Nguyen
  • Publication number: 20230250250
    Abstract: Disclosed are methods of synthesizing organic-inorganic aerogel composites. The method comprises the steps of providing a cellulose component, derived from a plant based material, dispersed in an aqueous medium, adding a water soluble binder and a water soluble polymer to the aqueous medium to form a first mixture, forming a silica component, which is derived from a plant based silicate material, in situ when contacted with the first mixture for a predetermined time and condition to form a second mixture, gelling the second mixture and drying the second mixture to form an organic—inorganic aerogel. Also disclosed are organic-inorganic aerogel composites and their uses thereof. In particular, the organic-inorganic aerogel composites may have applications in thermal insulations, acoustic insulations and/or oil absorption.
    Type: Application
    Filed: January 23, 2018
    Publication date: August 10, 2023
    Inventors: Son T. NGUYEN, Whye Tho NG
  • Publication number: 20230005765
    Abstract: Exemplary semiconductor processing systems may include a processing chamber. The systems may include a remote plasma unit coupled with the processing chamber. The systems may include an adapter coupled between the remote plasma unit and the processing chamber. The adapter may be characterized by a first end and a second end opposite the first end. The remote plasma unit may be coupled with the adapter at the first end. The adapter may define a first central channel extending more than 50% of a length of the adapter from the first end of the adapter. The adapter may define a second central channel extending less than 50% of the length of the adapter from the second end of the adapter. The adapter may define a transition between the first central channel and the second central channel.
    Type: Application
    Filed: July 2, 2021
    Publication date: January 5, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Son T. Nguyen, Kenneth D. Schatz, Anh N. Nguyen, Soonwook Jung, Ryan Pakulski, Anchuan Wang, Zihui Li
  • Patent number: 11322337
    Abstract: A workpiece carrier is described for a plasma processing chamber that has isolated heater plate blocks. In one example, a plasma processing system has a plasma chamber, a plasma source electrically coupled with a showerhead included within the plasma chamber, a workpiece holder in a processing region of the plasma chamber having a puck to carry a workpiece, wherein the workpiece holder includes a heater plate having a plurality of thermally isolated blocks each thermally coupled to the puck, wherein each block includes a heater to heat a respective block of the heater plate, and wherein the workpiece holder includes a cooling plate fastened to and thermally coupled to the heater plate, the cooling plate defining a cooling channel configured to distribute a heat transfer fluid to transfer heat from the cooling plate, and a temperature controller to independently control each heater.
    Type: Grant
    Filed: May 12, 2017
    Date of Patent: May 3, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Dmitry Lubomirsky, Son T. Nguyen, Anh N. Nguyen, David Palagashvili
  • Patent number: 11302520
    Abstract: Implementations of the disclosure generally provide an improved pedestal heater for a processing chamber. The pedestal heater includes a temperature-controlled plate having a first surface and a second surface opposing the first surface. The temperature-controlled plate includes an inner zone comprising a first set of heating elements, an outer zone comprising a second set of heating elements, the outer zone surrounding the inner zone, and a continuous thermal choke disposed between the inner zone and the outer zone, and a substrate receiving plate having a first surface and a second surface opposing the first surface, the second surface of the substrate receiving plate is coupled to the first surface of the temperature-controlled plate. The continuous thermal choke enables a very small temperature gradient to be created and manipulated between the inner zone and the outer zone, allowing center-fast or edge-fast etching profile to achieve on a surface of the substrate.
    Type: Grant
    Filed: June 23, 2015
    Date of Patent: April 12, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Tien Fak Tan, Dmitry Lubomirsky, Kirby H. Floyd, Son T. Nguyen, David Palagashvili, Alexander Tam, Shaofeng Chen
  • Publication number: 20220084845
    Abstract: Exemplary semiconductor processing chambers may include showerhead. The chambers may include a pedestal configured to support a semiconductor substrate, where the showerhead and pedestal at least partially define a processing region within the semiconductor chamber. The chamber may include a spacer characterized by a first surface in contact with the showerhead and a second surface opposite the first surface. The chamber may include a pumping liner characterized by a first surface in contact with the spacer and a second surface opposite the first surface. The pumping liner may define a plurality of apertures within the first surface of the pumping liner.
    Type: Application
    Filed: September 17, 2020
    Publication date: March 17, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Samartha Subramanya, Dmitry Lubomirsky, Mehmet Tugrul Samir, Lala Zhu, Martin Y. Choy, Son T. Nguyen, Pranav Gopal
  • Patent number: 10633738
    Abstract: Embodiments described herein relate to a protective coating that protects an underlying chamber component (i.e. the object upon which the coating is being deposited) from corrosion or deterioration within a corrosive environment.
    Type: Grant
    Filed: March 29, 2017
    Date of Patent: April 28, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Son T. Nguyen, Michael Fong
  • Patent number: 10431435
    Abstract: A wafer carrier is described with independent isolated heater zones. In one example, the carrier has a puck to carry a workpiece for fabrication processes, a heater plate having a plurality of thermally isolated blocks each thermally coupled to the puck, and each having a heater to heat a respective block of the heater plate, and a cooling plate fastened to and thermally coupled to the heater plate, the cooling plate having a cooling channel to carry a heat transfer fluid to transfer heat from the cooling plate.
    Type: Grant
    Filed: February 4, 2015
    Date of Patent: October 1, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Dmitry Lubomirsky, Son T. Nguyen, Anh N. Nguyen, David Palagashvill
  • Patent number: 10424463
    Abstract: Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.
    Type: Grant
    Filed: April 18, 2016
    Date of Patent: September 24, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Lin Xu, Zhijun Chen, Anchuan Wang, Son T. Nguyen
  • Patent number: 10424464
    Abstract: Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.
    Type: Grant
    Filed: April 28, 2017
    Date of Patent: September 24, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Lin Xu, Zhijun Chen, Anchuan Wang, Son T. Nguyen
  • Patent number: 10359141
    Abstract: A tube fitting includes a first coupling member having at least a snap coupling, a second coupling member having a first quick-connect side with a mating snap coupling disposed at a first end of the second coupling member, and at least one elastomeric seal disposed on the second coupling member, and a sleeve member configured to interface with the first coupling member and the at least one elastomeric seal, wherein the sleeve member is disposed between and retained by the first coupling member and the second coupling member and the snap coupling and mating snap coupling effect coupling of the first coupling member and the second coupling member.
    Type: Grant
    Filed: September 30, 2014
    Date of Patent: July 23, 2019
    Assignee: The Boeing Company
    Inventors: Ronald L. Clements, Brent M. Campbell, Alexandra N. Sonnabend, Tammy L. McLeod, Son T. Nguyen, Christian J. Tom
  • Patent number: 9766022
    Abstract: A method and apparatus for heating or cooling a fluid is provided. In one embodiment, a heat exchanger is provided. The heat exchanger includes a first subassembly comprising an insert. The insert comprises a body having a blind passage formed axially in the body, a plurality of nozzles formed therein, and a first plurality of heat exchange elements disposed within the body. The heat exchanger also comprises a second subassembly comprising a sleeve and a second plurality of heat exchange elements disposed within the sleeve, wherein the insert is sealably engaged inside the sleeve and the insert and the sleeve cooperatively define a thin gap, and wherein each of the plurality of nozzles are disposed radially between the blind passage and the thin gap.
    Type: Grant
    Filed: November 2, 2012
    Date of Patent: September 19, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Tao Hou, Son T. Nguyen, Kenric T. Choi, Anh N. Nguyen
  • Publication number: 20170250060
    Abstract: A workpiece carrier is described for a plasma processing chamber that has isolated heater plate blocks. In one example, a plasma processing system has a plasma chamber, a plasma source electrically coupled with a showerhead included within the plasma chamber, a workpiece holder in a processing region of the plasma chamber having a puck to carry a workpiece, wherein the workpiece holder includes a heater plate having a plurality of thermally isolated blocks each thermally coupled to the puck, wherein each block includes a heater to heat a respective block of the heater plate, and wherein the workpiece holder includes a cooling plate fastened to and thermally coupled to the heater plate, the cooling plate defining a cooling channel configured to distribute a heat transfer fluid to transfer heat from the cooling plate, and a temperature controller to independently control each heater.
    Type: Application
    Filed: May 12, 2017
    Publication date: August 31, 2017
    Inventors: Dmitry Lubomirsky, Son T. Nguyen, Anh N. Nguyen, David Palagashvili
  • Publication number: 20170229287
    Abstract: Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.
    Type: Application
    Filed: April 28, 2017
    Publication date: August 10, 2017
    Applicant: Applied Materials, Inc.
    Inventors: Lin Xu, Zhijun Chen, Anchuan Wang, Son T. Nguyen
  • Publication number: 20170204516
    Abstract: Embodiments described herein relate to a protective coating that protects an underlying chamber component (i.e. the object upon which the coating is being deposited) from corrosion or deterioration within a corrosive environment.
    Type: Application
    Filed: March 29, 2017
    Publication date: July 20, 2017
    Inventors: Son T. NGUYEN, Michael FONG
  • Publication number: 20170040175
    Abstract: Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.
    Type: Application
    Filed: April 18, 2016
    Publication date: February 9, 2017
    Applicant: Applied Materials, Inc.
    Inventors: Lin Xu, Zhijun Chen, Anchuan Wang, Son T. Nguyen
  • Patent number: 9540389
    Abstract: Novel compounds are disclosed having the structure of Formula I: wherein, n is an integer from 1 to 5; X is —CN, —F, —Cl, —Br, —I, —NO2; W is S, SO, SO2, O, NH, or NR5; R5 is alkyl, aralkyl, alkenyl, or alkynyl; Y is O, S; Z is NR1R2 or heterocycloalkyl; R1, R2 are, independently, hydrogen, alkyl, aralkyl, alkenyl, alkynyl, or cycloalkyl and may be optionally substituted with halo, hydroxy, alkoxy, amino, alkylamino, carboxy, alkoxycarbonyl, or nitrile groups; R3 and R4 are, independently, hydrogen, alkyl, aralkyl, alkenyl, alkynyl, or cycloalkyl and may be optionally substituted with halo, hydroxy, alkoxy, amino, alkylamino, carboxy, alkoxycarbonyl, or nitrile groups, and may together form a cyclic structure; and Ar is mono-, di-, or tri-substituted phenyl or heteroaryl, a pharmaceutically acceptable salts thereof. The compounds are potent bacterial efflux pump inhibitors (EPIs).
    Type: Grant
    Filed: May 3, 2014
    Date of Patent: January 10, 2017
    Assignee: Microbiotix, Inc.
    Inventors: Timothy J. Opperman, Son T. Nguyen, Steven M. Kwasny, Xiaoyuan Ding
  • Patent number: 9499898
    Abstract: A method of forming thin film heater traces on a wafer chuck includes positioning a pattern, that forms openings corresponding to a desired layout of the heater traces, in proximity to the wafer chuck. The method includes sputtering a material toward the pattern and the wafer chuck such that a portion of the material passes through the openings and adheres to the wafer chuck to form the heater traces. A method of forming thin film heater traces on a wafer chuck includes sputtering a blanket layer of a material onto the wafer chuck, and patterning a photoresist layer utilizing photolithography. The photoresist layer covers the blanket layer in an intended layout of the heater traces, exposing the blanket layer in areas that are not part of the intended layout. The method removes the areas that are not part of the intended layout by etching, and removes the photoresist layer.
    Type: Grant
    Filed: March 3, 2014
    Date of Patent: November 22, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Son T. Nguyen, Dmitry Lubomirsky
  • Patent number: 9349605
    Abstract: Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.
    Type: Grant
    Filed: August 7, 2015
    Date of Patent: May 24, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Lin Xu, Zhijun Chen, Anchuan Wang, Son T. Nguyen