Patents by Inventor Son Thai Lu

Son Thai Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11776849
    Abstract: One or more embodiments are directed to establishing electrical connections through silicon wafers with low resistance and high density, while at the same time maintaining processability for further fabrication. Such connections through silicon wafers enable low resistance connections from the top side of a silicon wafer to the bottom side of the silicon wafer.
    Type: Grant
    Filed: August 26, 2022
    Date of Patent: October 3, 2023
    Assignee: Quantinuum LLC
    Inventors: Robert Edward Higashi, Son Thai Lu, Elenita Malasmas Chanhvongsak
  • Publication number: 20220406659
    Abstract: One or more embodiments are directed to establishing electrical connections through silicon wafers with low resistance and high density, while at the same time maintaining processability for further fabrication. Such connections through silicon wafers enable low resistance connections from the top side of a silicon wafer to the bottom side of the silicon wafer.
    Type: Application
    Filed: August 26, 2022
    Publication date: December 22, 2022
    Inventors: Robert Edward Higashi, Son Thai Lu, Elenita Malasmas Chanhvongsak
  • Patent number: 11430695
    Abstract: One or more embodiments are directed to establishing electrical connections through silicon wafers with low resistance and high density, while at the same time maintaining processability for further fabrication. Such connections through silicon wafers enable low resistance connections from the top side of a silicon wafer to the bottom side of the silicon wafer.
    Type: Grant
    Filed: November 12, 2020
    Date of Patent: August 30, 2022
    Assignee: Quantinuum LLC
    Inventors: Robert Edward Higashi, Son Thai Lu, Elenita Malasmas Chanhvongsak
  • Publication number: 20210082759
    Abstract: One or more embodiments are directed to establishing electrical connections through silicon wafers with low resistance and high density, while at the same time maintaining processability for further fabrication. Such connections through silicon wafers enable low resistance connections from the top side of a silicon wafer to the bottom side of the silicon wafer.
    Type: Application
    Filed: November 12, 2020
    Publication date: March 18, 2021
    Inventors: Robert Edward Higashi, Son Thai Lu, Elenita Malasmas Chanhvongsak
  • Publication number: 20150053465
    Abstract: An approach for making thin flexible circuits. A layer of dielectric may have one or two surfaces coated with metal. The dielectric and the metal may each have a sub-mil thickness. The dielectric may be held in a fixture for fabrication like that of integrated circuits. The metal may be patterned and have components attached. More layers of dielectric and patterned metal may be added to the flexible circuit. Also bond pads and connecting vias may be fabricated in the flexible circuit. The flexible circuit may be cut into a plurality of smaller flexible circuits.
    Type: Application
    Filed: October 17, 2014
    Publication date: February 26, 2015
    Inventors: Daniel Youngner, Son Thai Lu, Helen Chanhvongsak, Lisa Lust, Douglas Carlson
  • Publication number: 20090223700
    Abstract: An approach for making thin flexible circuits. A layer of dielectric may have one or two surfaces coated with metal. The dielectric and the metal may each have a sub-mil thickness. The dielectric may be held in a fixture for fabrication like that of integrated circuits. The metal may be patterned and have components attached. More layers of dielectric and patterned metal may be added to the flexible circuit. Also bond pads and connecting vias may be fabricated in the flexible circuit. The flexible circuit may be cut into a plurality of smaller flexible circuits.
    Type: Application
    Filed: March 5, 2008
    Publication date: September 10, 2009
    Applicant: HONEYWELL INTERNATIONAL INC.
    Inventors: Daniel Youngner, Son Thai Lu, Helen Chanhvongsak, Lisa Lust, Doug Carlson
  • Patent number: 7368085
    Abstract: An analyte detector including a device having a surface, wherein the device is capable of detecting a charge adjacent to the surface. The surface includes a plurality of molecules bonded thereto, wherein the molecules have a structure (I): where R is a ligand bonded to the surface of the device and R1 is a spacer having 5 to 50 carbon atoms. The charge adjacent to the surface is created by the anionic complex of structure (I), and the number of anionic complex of structure (I) is dependent on the concentration of the analyte of interest. Methods for detecting an analyte are also disclosed, as well as systems using such analyte detectors.
    Type: Grant
    Filed: December 4, 2003
    Date of Patent: May 6, 2008
    Assignee: Honeywell International Inc.
    Inventors: Yuandong Gu, Son Thai Lu
  • Patent number: 7000477
    Abstract: A pressure sensor is formed on a substrate, the surface of the substrate having a p-n junction and a shell with a beam inside the shell over the p-n junction. The beam and the shell and the p-n junction surface form optical Fabry-Pérot cavities. An optical fiber is positioned in a hole formed in the underside of the substrate below the p-n junction. Light from the fiber charges the p-n junction and drives it into vibration mode. Pressure changes change the tension in the diaphram to vary the frequency with changes in pressure, so that pressure can be detected.
    Type: Grant
    Filed: July 2, 2004
    Date of Patent: February 21, 2006
    Assignee: Honeywell International inc.
    Inventors: Daniel W. Youngner, Son Thai Lu
  • Patent number: 6894787
    Abstract: A pressure sensor is formed on a substrate, the surface of the substrate having a p-n junction and a shell with a beam inside the shell over the p-n junction. The beam and the shell and the p-n junction surface form optical Fabry-Pérot cavities. An optical fiber is positioned in a hole formed in the underside of the substrate below the p-n junction. Light from the fiber charges the p-n junction and drives it into vibration mode. Pressure changes change the tension in the diaphram to vary the frequency with changes in pressure, so that pressure can be detected.
    Type: Grant
    Filed: December 21, 2001
    Date of Patent: May 17, 2005
    Assignee: Honeywell International Inc.
    Inventors: Daniel W. Youngner, Son Thai Lu
  • Publication number: 20040244502
    Abstract: A pressure sensor is formed on a substrate, the surface of the substrate having a p-n junction and a shell with a beam inside the shell over the p-n junction. The beam and the shell and the p-n junction surface form optical Fabry-Pérot cavities. An optical fiber is positioned in a hole formed in the underside of the substrate below the p-n junction. Light from the fiber charges the p-n junction and drives it into vibration mode. Pressure changes change the tension in the diaphram to vary the frequency with changes in pressure, so that pressure can be detected.
    Type: Application
    Filed: July 2, 2004
    Publication date: December 9, 2004
    Inventors: Daniel W. Youngner, Son Thai Lu
  • Publication number: 20030117630
    Abstract: A pressure sensor is formed on a substrate, the surface of the substrate having a p-n junction and a shell with a beam inside the shell over the p-n junction. The beam and the shell and the p-n junction surface form optical Fabry-Pérot cavities. An optical fiber is positioned in a hole formed in the underside of the substrate below the p-n junction. Light from the fiber charges the p-n junction and drives it into vibration mode. Pressure changes change the tension in the diaphram to vary the frequency with changes in pressure, so that pressure can be detected.
    Type: Application
    Filed: December 21, 2001
    Publication date: June 26, 2003
    Inventors: Daniel W. Youngner, Son Thai Lu