Patents by Inventor Son Thai Lu
Son Thai Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11776849Abstract: One or more embodiments are directed to establishing electrical connections through silicon wafers with low resistance and high density, while at the same time maintaining processability for further fabrication. Such connections through silicon wafers enable low resistance connections from the top side of a silicon wafer to the bottom side of the silicon wafer.Type: GrantFiled: August 26, 2022Date of Patent: October 3, 2023Assignee: Quantinuum LLCInventors: Robert Edward Higashi, Son Thai Lu, Elenita Malasmas Chanhvongsak
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Publication number: 20220406659Abstract: One or more embodiments are directed to establishing electrical connections through silicon wafers with low resistance and high density, while at the same time maintaining processability for further fabrication. Such connections through silicon wafers enable low resistance connections from the top side of a silicon wafer to the bottom side of the silicon wafer.Type: ApplicationFiled: August 26, 2022Publication date: December 22, 2022Inventors: Robert Edward Higashi, Son Thai Lu, Elenita Malasmas Chanhvongsak
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Patent number: 11430695Abstract: One or more embodiments are directed to establishing electrical connections through silicon wafers with low resistance and high density, while at the same time maintaining processability for further fabrication. Such connections through silicon wafers enable low resistance connections from the top side of a silicon wafer to the bottom side of the silicon wafer.Type: GrantFiled: November 12, 2020Date of Patent: August 30, 2022Assignee: Quantinuum LLCInventors: Robert Edward Higashi, Son Thai Lu, Elenita Malasmas Chanhvongsak
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Publication number: 20210082759Abstract: One or more embodiments are directed to establishing electrical connections through silicon wafers with low resistance and high density, while at the same time maintaining processability for further fabrication. Such connections through silicon wafers enable low resistance connections from the top side of a silicon wafer to the bottom side of the silicon wafer.Type: ApplicationFiled: November 12, 2020Publication date: March 18, 2021Inventors: Robert Edward Higashi, Son Thai Lu, Elenita Malasmas Chanhvongsak
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Publication number: 20150053465Abstract: An approach for making thin flexible circuits. A layer of dielectric may have one or two surfaces coated with metal. The dielectric and the metal may each have a sub-mil thickness. The dielectric may be held in a fixture for fabrication like that of integrated circuits. The metal may be patterned and have components attached. More layers of dielectric and patterned metal may be added to the flexible circuit. Also bond pads and connecting vias may be fabricated in the flexible circuit. The flexible circuit may be cut into a plurality of smaller flexible circuits.Type: ApplicationFiled: October 17, 2014Publication date: February 26, 2015Inventors: Daniel Youngner, Son Thai Lu, Helen Chanhvongsak, Lisa Lust, Douglas Carlson
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Publication number: 20090223700Abstract: An approach for making thin flexible circuits. A layer of dielectric may have one or two surfaces coated with metal. The dielectric and the metal may each have a sub-mil thickness. The dielectric may be held in a fixture for fabrication like that of integrated circuits. The metal may be patterned and have components attached. More layers of dielectric and patterned metal may be added to the flexible circuit. Also bond pads and connecting vias may be fabricated in the flexible circuit. The flexible circuit may be cut into a plurality of smaller flexible circuits.Type: ApplicationFiled: March 5, 2008Publication date: September 10, 2009Applicant: HONEYWELL INTERNATIONAL INC.Inventors: Daniel Youngner, Son Thai Lu, Helen Chanhvongsak, Lisa Lust, Doug Carlson
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Patent number: 7368085Abstract: An analyte detector including a device having a surface, wherein the device is capable of detecting a charge adjacent to the surface. The surface includes a plurality of molecules bonded thereto, wherein the molecules have a structure (I): where R is a ligand bonded to the surface of the device and R1 is a spacer having 5 to 50 carbon atoms. The charge adjacent to the surface is created by the anionic complex of structure (I), and the number of anionic complex of structure (I) is dependent on the concentration of the analyte of interest. Methods for detecting an analyte are also disclosed, as well as systems using such analyte detectors.Type: GrantFiled: December 4, 2003Date of Patent: May 6, 2008Assignee: Honeywell International Inc.Inventors: Yuandong Gu, Son Thai Lu
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Patent number: 7000477Abstract: A pressure sensor is formed on a substrate, the surface of the substrate having a p-n junction and a shell with a beam inside the shell over the p-n junction. The beam and the shell and the p-n junction surface form optical Fabry-Pérot cavities. An optical fiber is positioned in a hole formed in the underside of the substrate below the p-n junction. Light from the fiber charges the p-n junction and drives it into vibration mode. Pressure changes change the tension in the diaphram to vary the frequency with changes in pressure, so that pressure can be detected.Type: GrantFiled: July 2, 2004Date of Patent: February 21, 2006Assignee: Honeywell International inc.Inventors: Daniel W. Youngner, Son Thai Lu
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Patent number: 6894787Abstract: A pressure sensor is formed on a substrate, the surface of the substrate having a p-n junction and a shell with a beam inside the shell over the p-n junction. The beam and the shell and the p-n junction surface form optical Fabry-Pérot cavities. An optical fiber is positioned in a hole formed in the underside of the substrate below the p-n junction. Light from the fiber charges the p-n junction and drives it into vibration mode. Pressure changes change the tension in the diaphram to vary the frequency with changes in pressure, so that pressure can be detected.Type: GrantFiled: December 21, 2001Date of Patent: May 17, 2005Assignee: Honeywell International Inc.Inventors: Daniel W. Youngner, Son Thai Lu
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Publication number: 20040244502Abstract: A pressure sensor is formed on a substrate, the surface of the substrate having a p-n junction and a shell with a beam inside the shell over the p-n junction. The beam and the shell and the p-n junction surface form optical Fabry-Pérot cavities. An optical fiber is positioned in a hole formed in the underside of the substrate below the p-n junction. Light from the fiber charges the p-n junction and drives it into vibration mode. Pressure changes change the tension in the diaphram to vary the frequency with changes in pressure, so that pressure can be detected.Type: ApplicationFiled: July 2, 2004Publication date: December 9, 2004Inventors: Daniel W. Youngner, Son Thai Lu
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Publication number: 20030117630Abstract: A pressure sensor is formed on a substrate, the surface of the substrate having a p-n junction and a shell with a beam inside the shell over the p-n junction. The beam and the shell and the p-n junction surface form optical Fabry-Pérot cavities. An optical fiber is positioned in a hole formed in the underside of the substrate below the p-n junction. Light from the fiber charges the p-n junction and drives it into vibration mode. Pressure changes change the tension in the diaphram to vary the frequency with changes in pressure, so that pressure can be detected.Type: ApplicationFiled: December 21, 2001Publication date: June 26, 2003Inventors: Daniel W. Youngner, Son Thai Lu