Abstract: A luminophore may have the general formula AxMyXz:RE. A may be selected from the group of the trivalent cations. M may be selected from the group of the trivalent cations and includes at least two elements from the following group: Ga, Sc, Al, In, Sb, Bi, As, and Lu. X may be selected from the group of the divalent anions. RE may be a dopant and may be selected from the group formed by the following elements and the combinations of the following elements: Ni, Mn, Cr, Co, Fe, and Sn, where 0.8?x?1.2, 0.8?y?1.2 and 2.7?z?3.3. A process is also disclosed for producing a luminophore, an optoelectronic component, and an NIR spectrometer.

Abstract: Phospher particles with a Protective Layer and a method for producing phosphor particles with a protective layer are disclosed. In an embodiment the method includes treating Si-containing and/or Al-containing phosphor with an acid solution, wherein a pH value of the acid solution is maintained within a range of pH 3.5 to pH 7 for a period of at least 1 h, wherein an Si-containing layer is formed on the phosphor particles, wherein the Si-containing layer has a higher content of Si on a surface than the phosphor particles, and/or wherein an Al-containing layer is formed on the phosphor particles, wherein the Al-containing layer has a modified content of aluminum on the surface than the phosphor particles and tempering the treated phosphor particles at a temperature of at least 100° C. thereby producing the protective layer.

Abstract: Wavelength converters including coarse particles/grains of a red nitride phosphor are disclosed. In some embodiments the red nitride phosphor is a (Ca,Sr,Ba)2Si5N8:Eu phosphor with a D50 grain size or a D50 particle size that is ?5 microns. The red nitride phosphor may be encapsulated within an organic matrix or present in an inorganic matrix. In the latter case, the inorganic matrix may include fine grains with a D50 grain size <5 microns. Methods of making such wavelength converters and devices including such wavelength converters are also described.

Abstract: In an embodiment phosphor particles include one of a Si-containing phosphor or an Al-containing phosphor, wherein a surface of the phosphor particles is coated with at least one first protective layer and a second protective layer, the first protective layer being arranged above the second protective layer, wherein the second protective layer has a content of Si which is increased at least by 40 atomic % relative to a phosphor or an Al content reduced by at least 10% relative to the phosphor, and wherein the at least one first protective layer includes a molecular monolayer of one of a metal oxide, a metal nitride, a metal sulfide or a metal oxynitride.

Abstract: A method for producing phosphor particles with at least one first protective layer and a phosphor particles having at least one protective layer are disclosed. In an embodiment, a method includes providing phosphor particles and applying at least one first protective layer to the surface of the phosphor particles, wherein the at least of first protective layer include depositing a first starting compound by a first atomic layer deposition on the surface of the phosphor particles and depositing a second starting compound by a second atomic layer deposition on the surface of the phosphor particles.

Abstract: Phospher particles with a Protective Layer and a method for producing phosphor particles with a protective layer are disclosed. In an embodiment the method includes treating Si-containing and/or Al-containing phosphor with an acid solution, wherein a pH value of the acid solution is maintained within a range of pH 3.5 to pH 7 for a period of at least 1 h, wherein an Si-containing layer is formed on the phosphor particles, wherein the Si-containing layer has a higher content of Si on a surface than the phosphor particles, and/or wherein an Al-containing layer is formed on the phosphor particles, wherein the Al-containing layer has a modified content of aluminum on the surface than the phosphor particles and tempering the treated phosphor particles at a temperature of at least 100° C. thereby producing the protective layer.

Abstract: Phospher particles with a Protective Layer and a method for producing phosphor particles with a protective layer are disclosed. In an embodiment the method includes treating Si-containing and/or Al-containing phosphor with an acid solution, wherein a pH value of the acid solution is maintained within a range of pH 3.5 to pH 7 for a period of at least 1 h, wherein an Si-containing layer is formed on the phosphor particles, wherein the Si-containing layer has a higher content of Si on a surface than the phosphor particles, and/or wherein an Al-containing layer is formed on the phosphor particles, wherein the Al-containing layer has a modified content of aluminum on the surface than the phosphor particles and tempering the treated phosphor particles at a temperature of at least 100° C. thereby producing the protective layer.

Abstract: A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGa12O19, AyGa5O(15+y)/2, AE3Ga2O14, Ln3Ga5GeO14, Ga2O3, Ln3Ga5.5D0.5O14 or Mg4D2O9, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.

Abstract: A method for producing phosphor particles with at least one first protective layer and a phosphor particles having at least one protective layer are disclosed. In an embodiment, a method includes providing phosphor particles and applying at least one first protective layer to the surface of the phosphor particles, wherein the at least of first protective layer include depositing a first starting compound by a first atomic layer deposition on the surface of the phosphor particles and depositing a second starting compound by a second atomic layer deposition on the surface of the phosphor particles.

Abstract: A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGa12O19, AyGa5O(15+y)/2, AE3Ga2O14, Ln3Ga5GeO14, Ga2O3, Ln3Ga5.5D0.5O14 or Mg4D2O9, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.

Abstract: A composite oxynitride ceramic converter and a light source having the same are disclosed. In an embodiment the composite oxynitride ceramic converter includes a first phase of a triclinic SrSi2O2N2:Eu phosphor and a second phase of a hexagonal Sr3Si6N4O9:Eu phosphor.

Abstract: Wavelength converters including coarse particles/grains of a red nitride phosphor are disclosed. In some embodiments the red nitride phosphor is a (Ca,Sr,Ba)2Si5N8:Eu phosphor with a D50 grain size or a D50 particle size that is ?5 microns. The red nitride phosphor may be encapsulated within an organic matrix or present in an inorganic matrix. In the latter case, the inorganic matrix may include fine grains with a D50 grain size <5 microns. Methods of making such wavelength converters and devices including such wavelength converters are also described.

Abstract: Phospher particles with a Protective Layer and a method for producing phosphor particles with a protective layer are disclosed. In an embodiment the method includes treating Si-containing and/or Al-containing phosphor with an acid solution, wherein a pH value of the acid solution is maintained within a range of pH 3.5 to pH 7 for a period of at least 1 h, wherein an Si-containing layer is formed on the phosphor particles, wherein the Si-containing layer has a higher content of Si on a surface than the phosphor particles, and/or wherein an Al-containing layer is formed on the phosphor particles, wherein the Al-containing layer has a modified content of aluminum on the surface than the phosphor particles and tempering the treated phosphor particles at a temperature of at least 100° C. thereby producing the protective layer.

Abstract: A method can be used for producing a powdery precursor material for an optoelectronic component having a first phase of the following general composition (Ca1-a-b-c-d-eZndMgeSrcBabXa)2Si5N8, wherein X is an activator that is selected from the group of the lanthanoids and wherein the following applies: 0<a<1 and 0?b?1 and 0?c? and 0?d?1 and 0?e?1. The method includes producing a powdery mixture of starting materials. The starting materials comprise ions of the aforementioned composition. At least silicon nitride having a specific surface area greater than or equal to 9 m/g is selected as a starting material and wherein the silicon nitride comprises alpha silicon nitride or is amorphous. The method also includes heat-treating the mixture under a protective gas atmosphere.

Abstract: A method can be used for producing a powdery precursor material for an optoelectronic component having a first phase of the following general composition (Ca1-a-b-c-d-eZndMgeSrcBabXa)2Si5N8, wherein X is an activator that is selected from the group of the lanthanoids and wherein the following applies: 0<a<1 and 0?b?1 and 0?c? and 0?d?1 and 0?e?1. The method includes producing a powdery mixture of starting materials. The starting materials comprise ions of the aforementioned composition. At least silicon nitride having a specific surface area greater than or equal to 9 m/g is selected as a starting material and wherein the silicon nitride comprises alpha silicon nitride or is amorphous. The method also includes heat-treating the mixture under a protective gas atmosphere.