Abstract: A semiconductor device may include: a first conductive line extending in a first direction; a second conductive line disposed over the first conductive line to be spaced apart from the first conductive line and extending in a second direction different from the first direction; and a selector layer disposed between the first conductive line and the second conductive line and extending in a direction crossing at least one of the first direction or the second direction, wherein the selector layer includes a trench formed on a surface of the selector layer and extending in the direction crossing at least one of the first direction or the second direction.

Abstract: Disclosed are treatment information display device and method for displaying treatment history on an image of teeth in an accumulated manner. The treatment information display method enables a user to recognize at once a past treatment history, a current treatment status, and a future treatment plan by displaying, on the image of teeth, treatment information for the past, present, and future. In addition, the treatment information display method can provide the user with pieces of treatment information displayed on different images of teeth, by displaying, in an accumulated manner, the pieces of treatment information displayed on a plurality of teeth images.

Abstract: The present invention relates to an apparatus and method for automatically generating machine reading comprehension training data, and more particularly, to an apparatus and method for automatically generating and managing machine reading comprehension training data based on text semantic analysis. The apparatus for automatically generating machine reading comprehension training data according to the present invention includes a domain selection text collection unit configured to collect pieces of text data according to domains and subjects, a paragraph selection unit configured to select a paragraph using the pieces of collected text data and determine whether questions and correct answers are generatable, and a question and correct answer generation unit configured to generate questions and correct answers from the selected paragraph.

Abstract: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.

Abstract: Disclosed are a method of operating a selector device, a method of operating a nonvolatile memory apparatus to which the selector device is applied, an electronic circuit device including the selector device, and a nonvolatile memory apparatus. The method of operating the selector device controls access to a memory element, and includes providing the selector device including a switching layer and first and second electrodes disposed on both surfaces of the switching layer, which includes an insulator and a metal element, and applying a multi-step voltage pulse to the switching layer via the first and second electrodes to adjust a threshold voltage of the selector device, the multi-step voltage pulse including a threshold voltage control pulse and an operating voltage pulse. The operating voltage pulse has a magnitude for turning on the selector device, and the threshold voltage control pulse has a lower magnitude lower than the operating voltage pulse.

Abstract: Operating a selector device that controls access of a signal to a memory element may comprise applying a main operating voltage pulse and a refresh voltage pulse to the selector device. The refresh voltage pulse and main operating voltage pulse have opposite polarities. A magnitude of the main operating voltage pulse is greater than or equal to a threshold voltage for turning on the selector device, and a maximum magnitude of the refresh voltage pulse is less than the threshold voltage. The refresh voltage pulse reduces a difference between the threshold voltage and a turn-off voltage of the selector device, and may be applied immediately before or immediately after the main operating voltage pulse. An electronic circuit may include the selector device and a driving circuit for apply the pulses. A nonvolatile memory may include the driving circuit and a plurality of nonvolatile memory elements each including a selector device.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a multilayer synthetic anti-ferromagnetic (Multi SAF) structure including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the spacer layer may include n non-magnetic layers and n?1 magnetic layers that are disposed such that each of the n non-magnetic layers and each of the n?1 magnetic layers are alternately stacked, wherein n indicates an odd number equal to or greater than 3, wherein the n?1 magnetic layers and n non-magnetic layers may be configured to effectuate an antiferromagnetic exchange coupling with at least one of the first ferromagnetic layer and the second ferromagnetic layer.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a magnetic tunnel junction (MTJ) structure including a free layer, a pinned layer, and a tunnel barrier layer, the free layer having a variable magnetization direction, the pinned layer having a fixed magnetization direction, the tunnel barrier layer being interposed between the free layer and the pinned layer; and a thermal stability enhanced layer (TSEL) including a homogeneous material having an Fe—O bond.

Abstract: Disclosed are a method of operating a selector device, a method of operating a nonvolatile memory apparatus to which the selector device is applied, an electronic circuit device including the selector device, and a nonvolatile memory apparatus. The method of operating the selector device controls access to a memory element, and includes providing the selector device including a switching layer and first and second electrodes disposed on both surfaces of the switching layer, which includes an insulator and a metal element, and applying a multi-step voltage pulse to the switching layer via the first and second electrodes to adjust a threshold voltage of the selector device, the multi-step voltage pulse including a threshold voltage control pulse and an operating voltage pulse. The operating voltage pulse has a magnitude for turning on the selector device, and the threshold voltage control pulse has a lower magnitude lower than the operating voltage pulse.

Abstract: Disclosed are treatment information display device and method for displaying treatment history on an image of teeth in an accumulated manner. The treatment information display method enables a user to recognize at once a past treatment history, a current treatment status, and a future treatment plan by displaying, on the image of teeth, treatment information for the past, present, and future. In addition, the treatment information display method can provide the user with pieces of treatment information displayed on different images of teeth, by displaying, in an accumulated manner, the pieces of treatment information displayed on a plurality of teeth images.

Abstract: A variable resistance semiconductor device includes a lower conductive wiring; a bottom electrode over the lower conductive wiring; a selection element pattern over the bottom electrode; a first intermediate electrode over the selection element pattern; a second intermediate electrode over the first intermediate electrode; a variable resistance element pattern over the second intermediate electrode; a top electrode over the variable resistance element pattern; and an upper conductive wiring over the top electrode. The first intermediate electrode includes a first material. The second intermediate electrode includes a second material which has a better oxidation resistance and a higher work function than the first material.

Abstract: A method for forming a semiconductor device is disclosed. The method for forming the semiconductor device includes forming a first sacrificial film over a target layer to be etched, forming a first partition mask over the first sacrificial film, forming a first sacrificial film pattern by etching the first sacrificial film using the first partition mask, forming a first spacer at a sidewall of the first sacrificial film pattern, and forming a first spacer pattern by removing the first sacrificial film pattern. The first partition mask includes a plurality of first line-shaped space patterns extending in a first direction. A width of at least one space pattern located at both edges from among the plurality of first space patterns is smaller than a width of each of other space patterns.

Abstract: A switch includes a first electrode layer, a second electrode layer disposed over the first electrode layer, and a selecting element layer interposed between the first electrode layer and the second electrode layer. The selecting element layer includes a gas region in which a current flows or does not flow according to a voltage applied to the switch. When the current flows, the switch is in an on-state, and, when the current does not flow, the switch is in an off-state.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a multilayer synthetic anti-ferromagnetic (Multi SAF) structure including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the spacer layer may include n non-magnetic layers and n?1 magnetic layers that are disposed such that each of the n non-magnetic layers and each of the n?1 magnetic layers are alternately stacked, wherein n indicates an odd number equal to or greater than 3, wherein the n?1 magnetic layers and n non-magnetic layers may be configured to effectuate an antiferromagnetic exchange coupling with at least one of the first ferromagnetic layer and the second ferromagnetic layer.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a magnetic tunnel junction (MTJ) structure including a free layer, a pinned layer, and a tunnel barrier layer, the free layer having a variable magnetization direction, the pinned layer having a fixed magnetization direction, the tunnel barrier layer being interposed between the free layer and the pinned layer; and a thermal stability enhanced layer (TSEL) including a homogeneous material having an Fe—O bond.

Abstract: A method for forming a semiconductor device is disclosed. The method for forming the semiconductor device includes forming a first sacrificial film over a target layer to be etched, forming a first partition mask over the first sacrificial film, forming a first sacrificial film pattern by etching the first sacrificial film using the first partition mask, forming a first spacer at a sidewall of the first sacrificial film pattern, and forming a first spacer pattern by removing the first sacrificial film pattern. The first partition mask includes a plurality of first line-shaped space patterns extending in a first direction. A width of at least one space pattern located at both edges from among the plurality of first space patterns is smaller than a width of each of other space patterns.

Abstract: A method for forming a semiconductor device is disclosed. The method for forming the semiconductor device includes forming a first sacrificial film over a target layer to be etched, forming a first partition mask over the first sacrificial film, forming a first sacrificial film pattern by etching the first sacrificial film using the first partition mask, forming a first spacer at a sidewall of the first sacrificial film pattern, and forming a first spacer pattern by removing the first sacrificial film pattern. The first partition mask includes a plurality of first line-shaped space patterns extending in a first direction. A width of at least one space pattern located at both edges from among the plurality of first space patterns is smaller than a width of each of other space patterns.

Abstract: A variable resistance semiconductor device includes a lower conductive wiring; a bottom electrode over the lower conductive wiring; a selection element pattern over the bottom electrode; a first intermediate electrode over the selection element pattern; a second intermediate electrode over the first intermediate electrode; a variable resistance element pattern over the second intermediate electrode; a top electrode over the variable resistance element pattern; and an upper conductive wiring over the top electrode. The first intermediate electrode includes a first material. The second intermediate electrode includes a second material which has a better oxidation resistance and a higher work function than the first material.

Abstract: A method for forming a semiconductor device is disclosed. The method for forming the semiconductor device includes forming a first sacrificial film over a target layer to be etched, forming a first partition mask over the first sacrificial film, forming a first sacrificial film pattern by etching the first sacrificial film using the first partition mask, forming a first spacer at a sidewall of the first sacrificial film pattern, and forming a first spacer pattern by removing the first sacrificial film pattern. The first partition mask includes a plurality of first line-shaped space patterns extending in a first direction. A width of at least one space pattern located at both edges from among the plurality of first space patterns is smaller than a width of each of other space patterns.

Abstract: A switch includes a first electrode layer, a second electrode layer disposed over the first electrode layer, and a selecting element layer interposed between the first electrode layer and the second electrode layer. The selecting element layer includes a gas region in which a current flows or does not flow according to a voltage applied to the switch. When the current flows, the switch is in an on-state, and, when the current does not flow, the switch is in an off-state.