Abstract: A method for the production of a semiconductor structure having self-organized quantum wires is described. The process includes the formation of multi-atomic steps on a (001) oriented semiconductor substrate inclined at an angle toward the [110] direction. Quantum wires are then spontaneously formed in situ along edges of the multi-atomic steps during epitaxial growth of a semiconductor with a larger or smaller lattice constant than the substrate but with a band gap narrower than that of the underlying material. Further deposition of a layer of semiconductor with a lattice constant within 1% of the substrate but with a band gap wider than that of the wire material then buries the quantum wires between this layer and the substrate layers. These layers are free of defects.

Abstract: An improved method of fabricating a device such as OLED is disclosed. The method includes applying an adhesive on a cap or substrate. The adhesive is partially cured to initiate the cross-linking process while remaining in the liquid phase. The cap is then mounted onto the substrate and the adhesive is cured to encapsulate the device. By partially curing the adhesive prior to mounting the cap, the curing of the adhesive can be achieved without prolonged exposure to UV radiation or high temperatures which can adversely impact the device.

Abstract: Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple InxGa1−xN/InyGa1−yN quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn), Ethyldimethylindium (EDMIn) as antisurfactant during MOCVD growth, wherein the photoluminescence wavelength from these dots ranges from 480 nm to 530 nm. Controlled amounts of TMIn and/or other Indium precursors are important in triggering the formation of dislocation-free QDs, as are the subsequent flows of ammonia and TMIn. This method can be readily used for the growth of the active layers of blue and green light emitting diodes (LEDs).

Abstract: An OLED device having pillars, wherein the pillars serve to pattern a conductive layer during deposition. The profile of the pillars covers the edges of at least one functional layer to protect it from exposure to potentially deleterious substances.

Abstract: A multi-wavelength semiconductor laser is formed by monolithically integrating a plurality of laser diodes (1, 2) with at least one isolator section (3) and a coupler (4), which couples the different emission wavelengths &lgr;1, &lgr;2 into one output port (5). The isolator section can be either a light absorptive type or wavelength selective type, including a Bragg grating type isolator or a photonic bandgap crystal type isolator. The coupler is preferably a Y-junction coupler, but can also be a multi-branch waveguide coupler or a waveguide directional coupler.

Abstract: The GaN single-crystal substrate 11 in accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020° C. in a mixed gas atmosphere containing at least an NH3 gas. As a consequence, an atomic rearrangement is effected in the surface of the substrate 11 in which a large number of minute defects are formed by polishing, so as to flatten the surface of the substrate 11. Therefore, the surface of an epitaxial layer 12 formed on the substrate 11 can be made flat.

Abstract: Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple InxGa1−xN/InyGa1−yN quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn), Ethyldimethylindium (EDMIn) as antisurfactant during MOCVD growth, wherein the photoluminescence wavelength from these dots ranges from 480 nm to 530 nm. Controlled amounts of TMIn and/or other Indium precursors are important in triggering the formation of dislocation-free QDs, as are the subsequent flows of ammonia and TMIn. This method can be readily used for the growth of the active layers of blue and green light emitting diodes (LEDs).

Abstract: Based on the two-mode interference principle and the free-carrier plasma dispersion effect, a high carrier injection optical waveguide includes: a pair of optical waveguide elements, one functioning as an optical waveguide input and the other functioning as an optical waveguide output; a two-mode interference (TMI) region, made of semiconductor material, between the optical waveguide input and the optical waveguide output; first and second carrier injection regions; and a lateral carrier collection region, the lateral carrier collection region and the first carrier injection region being positioned on opposite sides of the TMI region with the second carrier injection region being positioned between the lateral carrier collection region and the first carrier injection region.

Abstract: An encapsulation for a device is disclosed. Spacer particles are randomly located in the device region to prevent a cap mounted on the substrate from contacting the active components, thereby protecting them from damage. The spacer particles comprise a base and an upper portion, the base being at least equal to or wider than the upper portion, for preventing the generation of dark spots around the spacer particles.

Abstract: Disclosed are compounds according to formula (I), 1

Abstract: A method of removing organic material having a conjugated structure from a selected region of a surface of an organic microelectronic device (OMED) during production of the OMED, the method comprising the acts of providing a source of ultraviolet radiation, irradiating at least the selected region of the surface of the OMED with ultraviolet radiation, thereby photolyzing at least some of the organic material and subjecting the selected region of the surface of the OMED to a temperature sufficient to evaporate at least some of the photolysed organic material.

Abstract: Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple InxGa1-xN/InyGa1-yN quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn), Ethyldimethylindium (EDMIn) as antisurfactant during MOCVD growth, wherein the photoluminescence wavelength from these dots ranges from 480 nm to 530 nm. Controlled amounts of TMIn and/or other Indium precursors are important in triggering the formation of dislocation-free QDs, as are the subsequent flows of ammonia and TMIn. This method can be readily used for the growth of the active layers of blue and green light emitting diodes (LEDs).

Abstract: Disclosed are a group-III nitride-based semiconductor device that is grown over the surface of a composite intermediate layers consisting of a thin amorphous silicon film or any stress-relief film or a combination of them and at least one multi-layered buffer on silicon substrate, and a method of fabricating the same device. The intermediate layers that suppress the occurrence of crystal defects and propagation of misfit dislocations induced by the lattice mismatch between the epitaxial layer and substrate, ca n be grown on a part or the entirety of the surface of a silicon (001) or (111) substrate which can be single crystal or coated with a thin amorphous silicon film. Then at least one layer or multiple layers of high quality group-III nitride-based semiconductors are grown over the composite intermediate layers.

Abstract: Based on the two-mode interference principle and the free-carrier plasma dispersion effect, a high carrier injection optical waveguide includes: a pair of optical waveguide elements, one functioning as an optical waveguide input and the other functioning as an optical waveguide output; a two-mode interference (TMI) region, made of semiconductor material, between the optical waveguide input and the optical waveguide output; first and second carrier injection regions; and a lateral carrier collection region, the lateral carrier collection region and the first carrier injection region being positioned on opposite sides of the TMI region with the second carrier injection region being positioned between the lateral carrier collection region and the first carrier injection region. In one implementation, the input and output waveguides are each formed as a Y-branch of two single-mode rib waveguides.

Abstract: An improved method of fabricating a device such as OLED is disclosed. The method includes applying an adhesive on a cap or substrate. The adhesive is partially cured to initiate the cross-linking process while remaining in the liquid phase. The cap is then mounted onto the substrate and the adhesive is cured to encapsulate the device. By partially curing the adhesive prior to mounting the cap, the curing of the adhesive can be achieved without prolonged exposure to UV radiation or high temperatures which can adversely impact the device.

Abstract: A method for the production of a semiconductor structure having self-organized quantum wires is described. The process includes the formation of multi-atomic steps on a (001) oriented semiconductor substrate inclined at an angle toward the [110] direction. Quantum wires are then spontaneously formed in situ along edges of the multi-atomic steps during epitaxial growth of a semiconductor with a larger or smaller lattice constant than the substrate but with a band gap narrower than that of the underlying material. Further deposition of a layer of semiconductor with a lattice constant within 1% of the substrate but with a band gap wider than that of the wire material then buries the quantum wires between this layer and the substrate layers. These layers are free of defects.

Abstract: A method for forming a void-free epitaxial cobalt silicide (CoSi2) layer on an ultra-shallow source/drain junction. A patterned silicon structure is cleaned using HF. A first titanium layer, a cobalt layer, and a second titanium layer are successively formed on the patterned silicon substrate. The patterned silicon substrate is annealed at a temperature of between about 550° C. and 580° C. in a nitrogen ambient at atmospheric pressure; whereby the cobalt migrates downward and reacts with the silicon structure to form a CoSi2/CoSi layer, and the first titanium layer migrates upward and the first titanium layer and the second titanium layer react with the nitrigen ambient to form TiN. The TiN and unreacted cobalt are removed. The silicon structure is annealed at a temperature of between about 825° C. and 875° C. to convert the CoSi2/CoSi layer to a CoSi2 layer. The CoSi2 layer can optionally be implanted with impurity ions which are subsequently diffused to form ultra-shallow junctions.

Abstract: A method of manufacturing a semiconductor optical device comprising the steps of: providing a substrate having an active layer thereon; providing an aluminium-bearing layer, the aluminium bearing, layer being adjacent the active layer; and oxidising the aluminium-bearing layer substantially entirely.

Abstract: A polymeric material comprising alternate substituted fluorene and phenylene units, as represented by the following formula 1

Abstract: A method to form a "mushroom shaped" gate structure 18 22 44A 70 that increases the top gate silicide contact area and improves the salicide process, especially TiSi.sub.2 salicide. The novel upper gate extensions 44A increase the top gate surface area so that the silicide gate contacts 70 will have a low resistivity. The invention includes forming a gate stack 18 22 26 comprised of a gate oxide layer 18, a center gate portion 22 and a hard mask 26. Next, we form a first insulating layer 40 over the gate stack 22 26 18. The hard mask 26 and a first thickness of the first insulating layer 40 are removed to expose sidewalls of the center gate portion 22. A second conductive layer 44 is formed over the first insulating layer 46 and the center gate portion 22. The second conductive layer 44 is etched to form critical rounded upper gate extensions 44A on the sidewalls of the center gate portion 22. Lower rectangular sidewall spacers 52 are formed on the sidewalls of the center gate portion 22.