Patents by Inventor Sook-Young Kang
Sook-Young Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9005697Abstract: A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.Type: GrantFiled: October 3, 2007Date of Patent: April 14, 2015Assignee: Samsung Display Co., Ltd.Inventors: Hyun-Jae Kim, Sook-Young Kang, Dong-Byum Kim, Su-Gyeong Lee, Myung-Koo Kang
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Thin film transistor having a three-portion gate electrode and liquid crystal display using the same
Patent number: 7791076Abstract: A thin film transistor and a liquid crystal display, in which a gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed.Type: GrantFiled: May 20, 2009Date of Patent: September 7, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Myung-Koo Kang, Hyun-Jae Kim, Sook-Young Kang, Woo-Suk Chung -
Patent number: 7781765Abstract: A mask for forming polysilicon has a first slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a second slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while baring the same width, a third slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, and a fourth slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width. The slit patterns arranged at the first to fourth slit regions are sequentially enlarged in width in the horizontal direction in multiple proportion to the width d of the slit pattern at the first slit region. The centers of the slit patterns arranged at the first to fourth slit regions in the horizontal direction are placed at the same line.Type: GrantFiled: April 19, 2007Date of Patent: August 24, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Myung-Koo Kang, Hyun-Jae Kim, Sook-Young Kang
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THIN FILM TRANSISTOR HAVING A THREE-PORTION GATE ELECTRODE AND LIQUID CRYSTAL DISPLAY USING THE SAME
Publication number: 20090224262Abstract: A thin film transistor and a liquid crystal display, in which a gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed.Type: ApplicationFiled: May 20, 2009Publication date: September 10, 2009Inventors: Myung-Koo Kang, Hyun-Jae Kim, Sook-Young Kang, Woo-Suk Chung -
Thin film transistor having a three-portion gate electrode and liquid crystal display using the same
Patent number: 7538349Abstract: The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed.Type: GrantFiled: January 9, 2007Date of Patent: May 26, 2009Assignee: Samsung Electronics Co., LtdInventors: Myung-Koo Kang, Hyun-Jae Kim, Sook-Young Kang, Woo-Suk Chung -
Patent number: 7488633Abstract: A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are formed along a longitudinal first direction and the mask moves along a longitudinal second direction. The first longitudinal direction is substantially perpendicular to the second longitudinal direction. Each of the split patterns is deviated apart by substantially a same distance from another. Thus, the polysilicon using the mask.Type: GrantFiled: January 18, 2008Date of Patent: February 10, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Myung-Koo Kang, Sook-Young Kang, Hyun-Jae Kim
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Publication number: 20080166892Abstract: A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are formed along a longitudinal first direction and the mask moves along a longitudinal second direction. The first longitudinal direction is substantially perpendicular to the second longitudinal direction. Each of the split patterns is deviated apart by substantially a same distance from another.Type: ApplicationFiled: January 18, 2008Publication date: July 10, 2008Inventors: Myung-Koo Kang, Sook-Young Kang, Hyun-Jae Kim
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Publication number: 20080115718Abstract: A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.Type: ApplicationFiled: October 3, 2007Publication date: May 22, 2008Inventors: Hyun-Jae Kim, Sook-Young Kang, Dong-Byum Kim, Su-Gyeong Lee, Myung-Koo Kang
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Patent number: 7335541Abstract: A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are formed along a longitudinal first direction and the mask moves along a longitudinal second direction. The first longitudinal direction is substantially perpendicular to the second longitudinal direction. Each of the split patterns is deviated apart by substantially a same distance from another. Thus, the polysilicon using the mask are grown to be isotropic with respect to the horizontal and vertical directions.Type: GrantFiled: May 26, 2004Date of Patent: February 26, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Myung-Koo Kang, Sook-Young Kang, Hyun-Jae Kim
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Patent number: 7294857Abstract: A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.Type: GrantFiled: February 3, 2005Date of Patent: November 13, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Hyun-Jae Kim, Sook-Young Kang, Dong-Byum Kim, Su-Gyeong Lee, Myung-Koo Kang
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Publication number: 20070187846Abstract: A mask for forming polysilicon has a first slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a second slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while baring the same width, a third slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, and a fourth slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width. The slit patterns arranged at the first to fourth slit regions are sequentially enlarged in width in the horizontal direction in multiple proportion to the width d of the slit pattern at the first slit region. The centers of the slit patterns arranged at the first to fourth slit regions in the horizontal direction are placed at the same line.Type: ApplicationFiled: April 19, 2007Publication date: August 16, 2007Inventors: Myung-Koo Kang, Hyun-Jae Kim, Sook-Young Kang
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Patent number: 7229860Abstract: A manufacturing method of a thin film transistor. An amorphous silicon thin film is formed on an insulating substrate, and is crystallized by a lateral solidification process with illumination of laser beams into the amorphous silicon thin film to form a polysilicon thin film. Next, protrusion portions protruding from the surface of the polysilicon thin film are removed by plasma dry-etching using a gas mixture including Cl2, SF6 and Ar at the ratio of 3:1:2 to smooth the surface of the polysilicon thin film, and the semiconductor layer is formed by patterning the polysilicon thin film. A gate insulating film covering the semiconductor layer is formed and a gate electrode is formed on the gate insulating film opposite the semiconductor layer.Type: GrantFiled: January 29, 2002Date of Patent: June 12, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Jean-Ho Song, Joon-Hoo Choi, Beom-Rak Choi, Myung-Koo Kang, Sook-Young Kang
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Publication number: 20070108447Abstract: The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed.Type: ApplicationFiled: January 9, 2007Publication date: May 17, 2007Inventors: Myung-Koo Kang, Hyun-Jae Kim, Sook-Young Kang, Woo-Suk Chung
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Patent number: 7217642Abstract: A mask for forming polysilicon has a first slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a second slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a third slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, and a fourth slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width. The slit patterns arranged at the first to fourth slit regions are sequentially enlarged in width in the horizontal direction in multiple proportion to the width d of the slit pattern at the first slit region. The centers of the slit patterns arranged at the first to fourth slit regions in the horizontal direction are placed at the same line.Type: GrantFiled: January 24, 2002Date of Patent: May 15, 2007Assignee: Samsung Electronis Co., Ltd.Inventors: Myung-Koo Kang, Hyun-Jae Kim, Sook-Young Kang
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Patent number: 7183574Abstract: The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed.Type: GrantFiled: January 3, 2003Date of Patent: February 27, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Myung-Koo Kang, Hyun-Jae Kim, Sook-Young Kang, Woo-Suk Chung
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Patent number: 7164153Abstract: A thin film transistor array panel is provided, which includes: a substrate including a plurality of pixel areas; a semiconductor layer formed on the substrate and including a plurality of pairs of first and second semiconductor portions in respective pixel areas; a first insulating layer formed on the semiconductor layer; a gate wire formed on the first insulating layer; a second insulating layer formed on the gate wire; a data wire formed on the second insulating layer; a third insulating layer formed on the data wire; a pixel electrode formed on the third insulating layer and connected to the data wire, wherein width and length of at least one of the first and the second semiconductor portions vary between at least two pixel areas.Type: GrantFiled: November 4, 2003Date of Patent: January 16, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Su-Gyeong Lee, Sook-Young Kang, Myung-Koo Kang, Hyun-Jae Kim, James S. Im
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Publication number: 20060102902Abstract: A thin film transistor array panel is provided, which includes: a substrate including a plurality of pixel areas; a semiconductor layer formed on the substrate and including a plurality of pairs of first and second semiconductor portions in respective pixel areas; a first insulating layer formed on the semiconductor layer; a gate wire formed on the first insulating layer; a second insulating layer formed on the gate wire; a data wire formed on the second insulating layer; a third insulating layer formed on the data wire; a pixel electrode formed on the third insulating layer and connected to the data wire, wherein width and length of at least one of the first and the second semiconductor portions vary between at least two pixel areas.Type: ApplicationFiled: November 4, 2003Publication date: May 18, 2006Inventors: Su-Gyeong Lee, Sook-Young Kang, Myung-Koo Kang, Hyun-Jae Kim, James Im
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Patent number: 7011911Abstract: In a method of manufacturing a thin film transistor according to the present invention, an amorphous silicon thin film is firstly formed on an insulating substrate and a planarization layer is formed thereon. Thereafter, the amorphous silicon thin film is crystallized by a solidification process using a laser-irradiation to form a polysilicon thin film. Next, the polysilicon thin film and the planarization layer are patterned to form a semiconductor layer, and a gate insulating layer covering the semiconductor layer is formed. Then, a gate electrode is formed on the gate insulating layer opposite the semiconductor layer. Next, impurities are implanted into the semiconductor layer to form a source region and a drain region opposite each other with respect to the gate electrode, and a source electrode and a drain electrode electrically connected to the source region and the drain region, respectively, are formed.Type: GrantFiled: September 16, 2003Date of Patent: March 14, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Hyun-Jae Kim, Sook-Young Kang, Myung-Koo Kang
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Publication number: 20050151196Abstract: A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.Type: ApplicationFiled: February 3, 2005Publication date: July 14, 2005Inventors: Hyun-Jae Kim, Sook-Young Kang, Dong-Byum Kim, Su-Gyeong Lee, Myung-Koo Kang
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Publication number: 20050130357Abstract: A manufacturing method of a thin film transistor. An amorphous silicon thin film is formed on an insulating substrate, and is crystallized by a lateral solidification process with illumination of laser beams into the amorphous silicon thin film to form a polysilicon thin film. Next, protrusion portions protruding from the surface of the polysilicon thin film are removed by plasma dry-etching using a gas mixture including Cl2, SF6 and Ar at the ratio of 3:1:2 to smooth the surface of the polysilicon thin film, and the semiconductor layer is formed by patterning the polysilicon thin film. A gate insulating film covering the semiconductor layer is formed and a gate electrode is formed on the gate insulating film opposite the semiconductor layer.Type: ApplicationFiled: January 29, 2002Publication date: June 16, 2005Inventors: Jean-Ho Song, Joon-Hoo Choi, Beom-Rak Choi, Myung-Koo Kang, Sook-Young Kang