Abstract: An apparatus and method for data fusion between heterogeneous sensors are disclosed. The method for data fusion between the heterogeneous sensors may include identifying image data and point cloud data for a search area by each of a camera sensor and a LiDAR sensor that are calibrated using a marker board having a hole; recognizing a translation vector determined through calibrating of the camera sensor and the LiDAR sensor; and projecting the point cloud data of the LiDAR sensor onto the image data of the camera sensor using the recognized translation vector to fuse the identified image data and point cloud data.

Abstract: Disclosed is a method for manufacturing high-carbon bearing steel, which include: heating a billet at a temperature of about 950 to 1,050° C. for about 70 to 120 minutes, rolling the billet to manufacture a wire rod, winding the wire rod to manufacture a wire rod coil, cooling the wire rod coil, and subsequently heat treating the wire rod coil for spheroidizing and carbonitriding, respectively. The bearing steel may include an amount of about 0.9 to 1.3 wt % of carbon (C), an amount of about 1.1 to 1.6 wt % of silicon (Si), an amount of about 1.0 to 1.5 wt % of manganese (Mn), an amount of about 1.5 to 1.9 wt % of chromium (Cr), an amount of about 0.2 to 0.6 wt % of nickel (Ni), an amount of about 0.1 to 0.3 wt % of molybdenum (Mo), and the balance iron (Fe) based on the total weight thereof.

Abstract: Disclosed is a method for manufacturing high-carbon bearing steel, which include: heating a billet at a temperature of about 950 to 1,050° C. for about 70 to 120 minutes, rolling the billet to manufacture a wire rod, winding the wire rod to manufacture a wire rod coil, cooling the wire rod coil, and subsequently heat treating the wire rod coil for spheroidizing and carbonitriding, respectively. The bearing steel may include an amount of about 0.9 to 1.3 wt % of carbon (C), an amount of about 1.1 to 1.6 wt % of silicon (Si), an amount of about 1.0 to 1.5 wt % of manganese (Mn), an amount of about 1.5 to 1.9 wt % of chromium (Cr), an amount of about 0.2 to 0.6 wt % of nickel (Ni), an amount of about 0.1 to 0.3 wt % of molybdenum (Mo), and the balance iron (Fe) based on the total weight thereof.

Abstract: Disclosed is a method for manufacturing high-carbon bearing steel, which include: heating a billet at a temperature of about 950 to 1,050° C. for about 70 to 120 minutes, rolling the billet to manufacture a wire rod, winding the wire rod to manufacture a wire rod coil, cooling the wire rod coil, and subsequently heat treating the wire rod coil for spheroidizing and carbonitriding, respectively. The bearing steel may include an amount of about 0.9 to 1.3 wt % of carbon (C), an amount of about 1.1 to 1.6 wt % of silicon (Si), an amount of about 1.0 to 1.5 wt % of manganese (Mn), an amount of about 1.5 to 1.9 wt % of chromium (Cr), an amount of about 0.2 to 0.6 wt % of nickel (Ni), an amount of about 0.1 to 0.3 wt % of molybdenum (Mo), and the balance iron (Fe) based on the total weight thereof.

Abstract: Disclosed is a method for manufacturing high-carbon bearing steel, which include: heating a billet at a temperature of about 950 to 1,050° C. for about 70 to 120 minutes, rolling the billet to manufacture a wire rod, winding the wire rod to manufacture a wire rod coil, cooling the wire rod coil, and subsequently heat treating the wire rod coil for spheroidizing and carbonitriding, respectively. The bearing steel may include an amount of about 0.9 to 1.3 wt % of carbon (C), an amount of about 1.1 to 1.6 wt % of silicon (Si), an amount of about 1.0 to 1.5 wt % of manganese (Mn), an amount of about 1.5 to 1.9 wt % of chromium (Cr), an amount of about 0.2 to 0.6 wt % of nickel (Ni), an amount of about 0.1 to 0.3 wt % of molybdenum (Mo), and the balance iron (Fe) based on the total weight thereof.

Abstract: A data storage device includes a central processing unit (CPU); a peripheral device; a power management unit (PMU) configured to control a power supply to the CPU and the peripheral device; and a receiver configured to transmit a second signal to the PMU through a second transmission path after transmitting a first signal to the CPU through a first transmission path, the receiver being configured such that the first and second signals transmitted by the receiver are signals that were output from a host.

Abstract: A nonvolatile memory device includes a data generating unit for generating a first reference value randomly or pseudo-randomly according to a first program request to program data in a memory cell, a seed selecting unit for selecting at least one of a plurality of seeds using the first reference value, and a randomizer for generating randomized data by using the selected seed. The data generating unit regenerates the first reference value as a second reference value different from the first reference value when a second program request is made, and the seed selecting unit selects another seed using the second reference value.

Abstract: A data storage device includes a central processing unit (CPU); a peripheral device; a power management unit (PMU) configured to control a power supply to the CPU and the peripheral device; and a receiver configured to transmit a second signal to the PMU through a second transmission path after transmitting a first signal to the CPU through a first transmission path, the receiver being configured such that the first and second signals transmitted by the receiver are signals that were output from a host.

Abstract: An error checking and correcting (ECC) circuit is connected with nonvolatile memories via a plurality of channels. The ECC circuit calculates a first syndrome according to first read data and stores the first syndrome in a first syndrome register block, and calculates a second syndrome according to second read data and stores the second syndrome in a second syndrome register block.

Abstract: A semiconductor device for initializing an interface card using a serial EEPROM and an initializing method allow for more effective use of a serial EEPROM used to store the initialization information, while not consuming additional circuit surface area.

Abstract: A semiconductor device for initializing an interface card using a serial EEPROM and an initializing method allow for more effective use of a serial EEPROM used to store the initialization information, while not consuming additional circuit surface area..