Abstract: An air-conditioning apparatus includes a main circuit in which a compressor, a flow switching device, an indoor heat exchanger, a pressure reducing device, and a plurality of parallel heat exchangers connected in parallel with each other are connected by pipes, a bypass pipe, a flow control device provided to the bypass pipe and configured to adjust a flow rate of refrigerant flowing through the bypass pipe, an evaporating pressure sensor configured to measure an evaporating pressure of the refrigerant, and a controller. The air-conditioning apparatus is configured to operate in a normal heating operation mode and a heating-defrosting operation mode. When an operation associated with the normal heating operation mode is switched to an operation associated with the heating-defrosting operation mode, the controller adjusts an opening degree of the flow control device using the evaporating pressure in the parallel heat exchanger and a driving frequency of the compressor.

Abstract: According to one or more embodiments of the disclosure, an antifuse is provided. The antifuse includes a semiconductor substrate, a dielectric oxide layer on the semiconductor substrate, and a conductive gate layer on the dielectric oxide layer. The dielectric oxide layer includes halogen to facilitate breakdown of the dielectric oxide layer upon application of an antifuse programming voltage.

Abstract: A structure used in the formation of a spintronics element, the spintronics element to include a plurality of laminated layers, includes a substrate, a plurality of laminated layers formed on the substrate, an uppermost layer of the plurality of laminated layers being a non-magnetic layer containing oxygen, and a protection layer directly formed on the uppermost layer, the protection layer preventing alteration of characteristics of the uppermost layer while exposed in an atmosphere including H2O, a partial pressure of H2O in the atmosphere being equal to or larger than 10?4 Pa, no other layer being directly formed on the protection layer.

Abstract: A structure used in the formation of a spintronics element, the spintronics element to include a plurality of laminated layers, includes a substrate, a plurality of laminated layers formed on the substrate, an uppermost layer of the plurality of laminated layers being a non-magnetic layer containing oxygen, and a protection layer directly formed on the uppermost layer, the protection layer preventing alteration of characteristics of the uppermost layer while exposed in an atmosphere including H2O, a partial pressure of H2O in the atmosphere being equal to or larger than 10?4 Pa, no other layer being directly formed on the protection layer.

Abstract: A spintronics element including a ferromagnetic layer containing boron, and a diffusion stopper film covering a side face of the ferromagnetic layer partially or entirely, the side face in direct contact with diffusion stopper film, so as to prevent out-diffusion of the boron contained in the ferromagnetic layer. The diffusion stopper film contains boron at a concentration higher than a concentration of the boron in a portion of the ferromagnetic layer where the ferromagnetic layer contacts the diffusion stopper film.

Abstract: A method of manufacturing a spintronics element from laminated layers. The method includes (a) forming a plurality of laminated layers in manufacturing equipment, (b) forming a wafer in the manufacturing equipment, including applying a protection layer directly on a non-magnetic uppermost layer of the laminated layers so that the protection layer prevents alteration of characteristics of the uppermost layer, and (c) exposing the wafer, outside of the manufacturing equipment, to an atmosphere that includes H2O having a partial pressure in the atmosphere equal to or larger than 10?4 Pa.

Abstract: A spintronics element including a ferromagnetic layer containing boron, and a diffusion stopper film covering a side face of the ferromagnetic layer partially or entirely, the side face in direct contact with diffusion stopper film, so as to prevent out-diffusion of the boron contained in the ferromagnetic layer. The diffusion stopper film contains boron at a concentration higher than a concentration of the boron in a portion of the ferromagnetic layer where the ferromagnetic layer contacts the diffusion stopper film.

Abstract: One three-phase transformer (71A) out of two paired three-phase transformers among three-phase transformers provided for respective feeder lines outputs, as operating power, first three-phase AC power of the same voltage phase as that of power-supply power. The other three-phase transformer (71B) out of the two paired three-phase transformers outputs, as the operating power, second three-phase AC power of a voltage phase shifted by ?/6 from that of the power-supply power. The power storage device (4) of a crane apparatus (10) stores DC power supplied from a three-phase full-wave rectifier (1) to a common bus (B), and supplies the stored power to the common bus (B) upon reduction of the DC power.

Abstract: A three-phase full-wave rectifier (21) performs full-wave rectification of three-phase AC power (11A) supplied from ground power supply equipment, and supplies obtained DC power (12A) to a common bus (B). A ?-Y connection type three-phase transformer (2) outputs three-phase AC power (11B) of a voltage phase shifted by ?/6 from the three-phase AC power (11A). A three-phase full-wave rectifier (22) performs full-wave rectification of the three-phase AC power (11B) output from the three-phase transformer (2), and supplies obtained DC power (12B) to the common bus (B).

Abstract: A method of manufacturing a spintronics element from laminated layers. The method includes (a) forming a plurality of laminated layers in manufacturing equipment, (b) forming a wafer in the manufacturing equipment, including applying a protection layer directly on a non-magnetic uppermost layer of the laminated layers so that the protection layer prevents alteration of characteristics of the uppermost layer, and (c) exposing the wafer, outside of the manufacturing equipment, to an atmosphere that includes H2O having a partial pressure in the atmosphere equal to or larger than 10?4 Pa.

Abstract: Provided is a quay crane which includes a seismic isolation device formed from laminated rubber, and which is capable of withstanding a large-scale earthquake. Particularly, provided is a quay crane including a seismic isolation device with a slide length of 1000 mm or over. In a quay crane including a seismic isolation device, the seismic isolation device includes: laminated rubber formed by laminating a steel plate and a rubber material; and an auxiliary support mechanism. The auxiliary support mechanism includes: a supporting body fixed to one of a top plate side and a bottom plate side of the seismic isolation device; and a contacting plate fixed to the other thereof. The supporting body and the contacting plate constituting the auxiliary support mechanism come into contact with each other at least in the event of an earthquake, and the auxiliary support mechanism supports a weight of the quay crane.

Abstract: One three-phase transformer (71A) out of two paired three-phase transformers among three-phase transformers provided for respective feeder lines outputs, as operating power, first three-phase AC power of the same voltage phase as that of power-supply power. The other three-phase transformer (71B) out of the two paired three-phase transformers outputs, as the operating power, second three-phase AC power of a voltage phase shifted by ?/6 from that of the power-supply power. The power storage device (4) of a crane apparatus (10) stores DC power supplied from a three-phase full-wave rectifier (1) to a common bus (B), and supplies the stored power to the common bus (B) upon reduction of the DC power.

Abstract: A three-phase full-wave rectifier (21) performs full-wave rectification of three-phase AC power (11A) supplied from ground power supply equipment, and supplies obtained DC power (12A) to a common bus (B). A ?-Y connection type three-phase transformer (2) outputs three-phase AC power (11B) of a voltage phase shifted by ?/6 from the three-phase AC power (11A). A three-phase full-wave rectifier (22) performs full-wave rectification of the three-phase AC power (11B) output from the three-phase transformer (2), and supplies obtained DC power (12B) to the common bus (B).

Abstract: Provided is a quay crane which includes a seismic isolation device formed from laminated rubber, and which is capable of withstanding a large-scale earthquake. Particularly, provided is a quay crane including a seismic isolation device with a slide length of 1000 mm or over. In a quay crane including a seismic isolation device, the seismic isolation device includes: laminated rubber formed by laminating a steel plate and a rubber material; and an auxiliary support mechanism. The auxiliary support mechanism includes: a supporting body fixed to one of a top plate side and a bottom plate side of the seismic isolation device; and a contacting plate fixed to the other thereof. The supporting body and the contacting plate constituting the auxiliary support mechanism come into contact with each other at least in the event of an earthquake, and the auxiliary support mechanism supports a weight of the quay crane.