Patents by Inventor Souvik Banerjee
Souvik Banerjee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230286995Abstract: The invention encompasses novel dihydroquinoxalinone compounds with significantly improved water solubility and reduced toxicity to achieve higher therapeutic indexes and the treatment of cancer, virus infections, and inflammation using the same.Type: ApplicationFiled: April 20, 2022Publication date: September 14, 2023Inventors: Souvik BANERJEE, Shanshan DENG, Wei LI, K A Foyez MAHMUD, Duane D. MILLER, Zhongzhi WU, Rui WANG, Tiffany SEAGROVES, Raisa KRUTILINA, Kelli HARTMANN, Satyanarayana POCHAMPALLY
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Patent number: 11124490Abstract: The present disclosure provides novel ATX inhibitors, and pharmaceutical compositions comprising said inhibitors, as well as methods of treatment comprising administration of said inhibitors.Type: GrantFiled: June 2, 2017Date of Patent: September 21, 2021Assignees: UNIVERSITY OF TENNESSEE RESEARCH FOUNDATION, UNIVERSITY OF MEMPHISInventors: Duane D. Miller, Gabor G. Tigyi, Souvik Banerjee, Abby L. Parrill-Baker
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Publication number: 20200317626Abstract: The present disclosure provides novel ATX inhibitors, and pharmaceutical compositions comprising said inhibitors, as well as methods of treatment comprising administration of said inhibitors.Type: ApplicationFiled: June 2, 2017Publication date: October 8, 2020Inventors: Duane D. MILLER, Gabor G. TIGYI, Souvik BANERJEE, Abby L. PARRILL-BAKER
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Publication number: 20130269732Abstract: A carbon dioxide supply method and system for supplying supercritical and subcritical phases of carbon dioxide on-demand to a substrate to create a novel and improved cleaning sequence for removal of contaminants contained in the substrate. The ability for the supply system to deliver vapor, liquid and supercritical phases of carbon dioxide in a specific sequence at predetermined times during a process cleaning sequence produces an improved removal of contaminants from the substrate compared to conventional carbon dioxide cleaning processes.Type: ApplicationFiled: April 15, 2013Publication date: October 17, 2013Inventors: Souvik Banerjee, William R. Gerristead, Jr.
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Publication number: 20090126760Abstract: An apparatus and method are provided to treat for example a semiconductor wafer substrate wherein a delivery means for heat, a cryogen, and a fluid chemical reactant, is disposed in a chamber in which the substrate is disposed for at least one surface of the substrate to be cleaned in the chamber. The chamber may also consist of a plurality of stations for chemically treating, providing cryogen to the substrate to effect such cleaning and heating. Air is provided in the chamber in a laminar flow substantially parallel to the surface being treated to remove displaced material from the surface and prevent redeposition of the material on the substrate surface.Type: ApplicationFiled: April 19, 2005Publication date: May 21, 2009Applicant: BOC, INC.Inventors: Souvik Banerjee, Ramesh B. Borade, Werner Brandt
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Patent number: 7503334Abstract: A system is provided for cleaning wafers that includes specialized pressurization, process vessel, recirculation, chemical addition, depressurization, and recapture-recycle subsystems. A solvent delivery mechanism converts a liquid-state sub-critical solution to a supercritical cleaning solution and introduces it into a process vessel that contains a wafer or wafers. The supercritical cleaning solution is recirculated through the process vessel by a recirculation system. An additive delivery system introduces chemical additives to the supercritical cleaning solution via the solvent delivery mechanism, the process vessel, or the recirculation system. Addition of chemical additives to the sub-critical solution may also be performed. The recirculation system provides efficient mixing of chemical additives, efficient cleaning, and process uniformity. A depressurization system provides dilution and removal of cleaning solutions under supercritical conditions.Type: GrantFiled: January 6, 2005Date of Patent: March 17, 2009Assignee: Novellus Systems, Inc.Inventors: Krishnan Shrinivasan, Souvik Banerjee, Francisco Juarez, Karen A. Reinhardt, Sanjay Gopinath
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Publication number: 20070089761Abstract: A method is provided to remove in particular ion implanted photoresist from a substrate, such as a semiconductor wafer, consisting of heating the photoresist for deforming an interface of a crust and bulk layer of the photoresist, and controlling a temperature of the heating for cracking the photoresist.Type: ApplicationFiled: October 21, 2005Publication date: April 26, 2007Inventors: Souvik Banerjee, Ramesh Borade, Srini Raghavan, Peggi Cross
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Patent number: 7056391Abstract: The present invention is directed to the use of a high vapor pressure liquid prior to or simultaneous with cryogenic cleaning to remove contaminants from the surface of substrates requiring precision cleaning such as semiconductors, metal films, or dielectric films. A liquid suitable for use in the present invention preferably has a vapor pressure above 5 kPa and a freezing point below ?50° C.Type: GrantFiled: July 7, 2004Date of Patent: June 6, 2006Assignee: BOC, Inc.Inventors: Souvik Banerjee, Harlan Forrest Chung
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Publication number: 20050217706Abstract: The present invention is directed to fluid assisted cryogenic cleaning of a substrate surface requiring precision cleaning such as semiconductors, metals, and dielectric films. The process comprises the steps of applying a fluid selected from the group consisting of high vapor pressure liquids, reactive gases, and vapors of reactive liquids onto the substrate surface followed by or simultaneously with cryogenic cleaning of the substrate surface to remove contaminants.Type: ApplicationFiled: April 3, 2003Publication date: October 6, 2005Inventors: Souvik Banerjee, Harlan Chung
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Patent number: 6949145Abstract: The present invention is directed towards the use of a reactive gas or vapor of a reactive liquid prior to or in combination with cryogenic cleaning to remove contaminants from the semiconductor surfaces or other substrate surfaces requiring precision cleaning. The reactive gas or vapor is selected according to the contaminants to be removed and the reactivity of the gas or vapor with the contaminants. Preferably, this reaction forms a gaseous byproduct which is removed from the substrate surface by the flow of nitrogen across the surface.Type: GrantFiled: March 31, 2003Date of Patent: September 27, 2005Assignee: BOC, Inc.Inventors: Souvik Banerjee, Harlan Forrest Chung
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Patent number: 6905556Abstract: A method of delivering a reagent to a wafer is provided. A solvent is provided. A set of conditions of temperature and pressure is provided to the solvent, which is sufficient to bring the solvent to supercritical conditions. A reagent is provided. A surfactant is provided, where the surfactant has a first moiety with an affinity for the solvent and a second moiety with an affinity for the reagent, where the surfactant increases the concentration of the reagent that may be carried by the solvent. The solvent, surfactant, and reagent are combined to form a solution. The solution is delivered to a supercritical process chamber, wherein a wafer is exposed to the solution in the process chamber.Type: GrantFiled: November 27, 2002Date of Patent: June 14, 2005Assignee: Novellus Systems, Inc.Inventors: Raashina Humayun, Patrick C. Joyce, Adrianne Kay Tipton, Krishnan Shrinivasan, Dennis W. Hess, Satyanarayana Myneni, Souvik Banerjee
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Patent number: 6852173Abstract: The present invention is directed to the use of a high vapor pressure liquid prior to or simultaneous with cryogenic cleaning to remove contaminants from the surface of substrates requiring precision cleaning such as semiconductors, metal films, or dielectric films. A liquid suitable for use in the present invention preferably has a vapor pressure above 5 kPa and a freezing point below ?50° C.Type: GrantFiled: December 19, 2002Date of Patent: February 8, 2005Assignee: BOC, Inc.Inventors: Souvik Banerjee, Harlan Forrest Chung
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Patent number: 6848458Abstract: The present invention pertains to a system for cleaning wafers that includes specialized pressurization, process vessel, recirculation, chemical addition, depressurization, and recapture-recycle subsystems, as well as methods for implementing wafer cleaning using such a system. A solvent delivery mechanism converts a liquid-state sub-critical solution to a supercritical cleaning solution and introduces it into a process vessel that contains a wafer or wafers. The supercritical cleaning solution is recirculated through the process vessel by a recirculation system. An additive delivery system introduces chemical additives to the supercritical cleaning solution via the solvent delivery mechanism, the process vessel, or the recirculation system. Addition of chemical additives to the sub-critical solution may also be performed. The recirculation system provides efficient mixing of chemical additives, efficient cleaning, and process uniformity.Type: GrantFiled: February 5, 2002Date of Patent: February 1, 2005Assignee: Novellus Systems, Inc.Inventors: Krishnan Shrinivasan, Souvik Banerjee, Francisco Juarez, Karen A. Reinhardt, Sanjay Gopinath
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Publication number: 20040255984Abstract: The present invention is directed to the use of a high vapor pressure liquid prior to or simultaneous with cryogenic cleaning to remove contaminants from the surface of substrates requiring precision cleaning such as semiconductors, metal films, or dielectric films. A liquid suitable for use in the present invention preferably has a vapor pressure above 5 kPa and a freezing point below −50° C.Type: ApplicationFiled: July 7, 2004Publication date: December 23, 2004Inventors: Souvik Banerjee, Harlan Forrest Chung
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Patent number: 6800142Abstract: Methods for cleaning semiconductor wafers are presented. Contaminants, particularly photoresist and post-etch residue, are removed from semiconductor wafers. A wafer or wafers is first treated with a peroxide-containing medium, for example, to oxidatively cleave bond structures of contaminants on the wafer work surface. Excitation energy is used to activate the peroxide-containing medium toward the formation of radical species. After treatment with the peroxide-containing medium, a supercritical fluid treatment is used to remove any remaining contaminants as well as to condition the wafer for subsequent processing.Type: GrantFiled: May 30, 2002Date of Patent: October 5, 2004Assignee: Novellus Systems, Inc.Inventors: Adrianne Kay Tipton, Krishnan Shrinivasan, Souvik Banerjee, Raashina Humayun, Patrick Christopher Joyce
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Publication number: 20040029494Abstract: The present invention provides for a new and improved method of aqueous and cryogenic enhanced (ACE) cleaning for semiconductor surfaces as well as the surfaces of metals, dielectric films particularly hydrophobic low k dielectric films, and CMP etch stop films to remove post-CMP contaminants. It is particularly useful for removing contaminants which are 0.3 &mgr;m in size or smaller. The ACE cleaning process is applied to a surface which has undergone chemical-mechanical polishing (CMP). It includes the steps of cleaning the surface with an aqueous-based cleaning process, at least partially drying the surface, and, shortly thereafter, cleaning the surface with a CO2 cryogenic cleaning process. This process removes such contaminants from surfaces which are hydrophobic and hence difficult to clean with aqueous-based cleaning techniques alone.Type: ApplicationFiled: August 9, 2002Publication date: February 12, 2004Inventors: Souvik Banerjee, Harlan Forrest Chung
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Publication number: 20030188766Abstract: The present invention is directed to the use of a high vapor pressure liquid prior to or simultaneous with cryogenic cleaning to remove contaminants from the surface of substrates requiring precision cleaning such as semiconductors, metal films, or dielectric films. A liquid suitable for use in the present invention preferably has a vapor pressure above 5 kPa and a freezing point below −50° C.Type: ApplicationFiled: December 19, 2002Publication date: October 9, 2003Inventors: Souvik Banerjee, Harlan Forrest Chung
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Publication number: 20030188763Abstract: The present invention is directed towards the use of a reactive gas or vapor of a reactive liquid prior to or in combination with cryogenic cleaning to remove contaminants from the semiconductor surfaces or other substrate surfaces requiring precision cleaning. The reactive gas or vapor is selected according to the contaminants to be removed and the reactivity of the gas or vapor with the contaminants. Preferably, this reaction forms a gaseous byproduct which is removed from the substrate surface by the flow of nitrogen across the surface.Type: ApplicationFiled: March 31, 2003Publication date: October 9, 2003Inventors: Souvik Banerjee, Harlan Forrest Chung