Abstract: An apparatus for processing substrates that is configured for a cleaning operation by loading a cleaning process wafer onto the susceptor before forming a cleaning plasma in the processing chamber. In one embodiment, a ceramic wafer is chosen to have a dielectric value sufficient to alter the electromagnetic field of the plasma, and spreads the plasma away from the susceptor during a cleaning operation, thus reducing damage to the susceptor. The plasma may be directed towards the walls of the chamber to reduce chamber cleaning time.

Abstract: A corrosion resistant apparatus for processing a substrate in corrosive process gas comprises (i) a process chamber, (ii) a process gas inlet provided for introducing process gas into the chamber, (iii) a process gas exhaust for exhausting process gas from the chamber, and (iv) processing components for processing the substrate in the chamber. At least a portion of any one of the (i) process chamber, (ii) process gas inlet, (iii) process gas exhaust, or (iv) processing components, is exposed to the corrosive gas in the chamber, and is made of an alloy comprising nickel and eutectic component, the alloy being substantially resistant to corrosion by the corrosive process gas.

Abstract: A method and apparatus for protecting a susceptor during a cleaning operation by loading a ceramic wafer onto the susceptor before introducing the cleaning agent into the chamber is provided. In particular, the ceramic wafer is chosen to have a dielectric value sufficient to alter the electromagnetic field of a plasma to spread the plasma away from the susceptor during a cleaning operation, directing more of the plasma towards the walls of the chamber.