Patents by Inventor Srikanth V. RACHERLA

Srikanth V. RACHERLA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin film encapsulation processing system and process kit
    Patent number: 10655222
    Abstract: The present disclosure relates to methods and apparatus for a thin film encapsulation (TFE). In one embodiment a process kit for use in an atomic layer deposition (ALD) chamber is disclosed and includes a dielectric window, a sealing frame, and a mask frame connected with the sealing frame, wherein the mask frame has a gas inlet channel and a gas outlet channel formed therein on opposing sides thereof.
    Type: Grant
    Filed: December 1, 2017
    Date of Patent: May 19, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Shinichi Kurita, Srikanth V. Racherla, Suhas Bhoski, Xiangxin Rui
  • THIN FILM ENCAPSULATION PROCESSING SYSTEM AND PROCESS KIT
    Publication number: 20180155835
    Abstract: The present disclosure relates to methods and apparatus for a thin film encapsulation (TFE). In one embodiment a process kit for use in an atomic layer deposition (ALD) chamber is disclosed and includes a dielectric window, a sealing frame, and a mask frame connected with the sealing frame, wherein the mask frame has a gas inlet channel and a gas outlet channel formed therein on opposing sides thereof.
    Type: Application
    Filed: December 1, 2017
    Publication date: June 7, 2018
    Inventors: Shinichi KURITA, Srikanth V. RACHERLA, Suhas BHOSKI, Xiangxin RUI
  • Apparatus and method of forming an indium gallium zinc oxide layer
    Patent number: 9214340
    Abstract: The embodiments of the disclosure may generally provide a method and apparatus for forming thin film transistor device that includes an indium gallium zinc oxide (IGZO) layer using a multi-component precursor gas. The embodiments of the disclosure may provide a plasma enhanced chemical vapor deposition system configured to form an IGZO layer on large area substrates. However, it should be understood that the disclosure has utility in other system configurations such other types of chemical vapor deposition systems and any other system in which distributing a multi-component precursor gas to and within a process chamber is desired.
    Type: Grant
    Filed: January 28, 2015
    Date of Patent: December 15, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Shinichi Kurita, Srikanth V. Racherla, Suhail Anwar
  • APPARATUS AND METHOD OF FORMING AN INDIUM GALLIUM ZINC OXIDE LAYER
    Publication number: 20150221508
    Abstract: The embodiments of the disclosure may generally provide a method and apparatus for forming thin film transistor device that includes an indium gallium zinc oxide (IGZO) layer using a multi-component precursor gas. The embodiments of the disclosure may provide a plasma enhanced chemical vapor deposition system configured to form an IGZO layer on large area substrates. However, it should be understood that the disclosure has utility in other system configurations such other types of chemical vapor deposition systems and any other system in which distributing a multi-component precursor gas to and within a process chamber is desired.
    Type: Application
    Filed: January 28, 2015
    Publication date: August 6, 2015
    Inventors: Shinichi KURITA, Srikanth V. RACHERLA, Suhail ANWAR