Patents by Inventor Srikar Peesari

Srikar Peesari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11023327
    Abstract: A first entropy indicator is calculated at a first time for a collection of data stored in at least one memory. A second entropy indicator is calculated at a second time for the collection of data. The first entropy indicator is compared with the second entropy indicator. Based on the comparison, it is determined whether to back up the collection of data and/or whether to retain an earlier backup of the collection of data.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: June 1, 2021
    Assignee: Western Digital Technologies, Inc.
    Inventors: Daniel Joseph Linnen, Ashish Ghai, Avinash Rajagiri, Srikar Peesari
  • Patent number: 10886002
    Abstract: A method for detecting defects in a memory system includes receiving a command to perform a standard erase operation on at least one memory cell of the memory system. The method also includes performing a first defect detection operation on the at least one memory cell. The method also includes setting, in response to the first defect detection operation detecting a defect, a defect status indicator. The method also includes performing the standard erase operation on the at least one memory cell. The method also includes performing a second defect detection operation on the at least one memory cell. The method also includes setting, in response to the second defect detection operation detecting a defect, the defect status indicator.
    Type: Grant
    Filed: June 13, 2019
    Date of Patent: January 5, 2021
    Assignee: SanDisk Technologies LLC
    Inventors: Daniel Linnen, Avinash Rajagiri, Yuvaraj Krishnamoorthy, Srikar Peesari, Ashish Ghai, Dongxiang Liao
  • Publication number: 20200395092
    Abstract: A method for detecting defects in a memory system includes receiving a command to perform a standard erase operation on at least one memory cell of the memory system. The method also includes performing a first defect detection operation on the at least one memory cell. The method also includes setting, in response to the first defect detection operation detecting a defect, a defect status indicator. The method also includes performing the standard erase operation on the at least one memory cell. The method also includes performing a second defect detection operation on the at least one memory cell. The method also includes setting, in response to the second defect detection operation detecting a defect, the defect status indicator.
    Type: Application
    Filed: June 13, 2019
    Publication date: December 17, 2020
    Applicant: SanDisk Technologies LLC
    Inventors: Dan Linnen, Avi Rajagiri, Yuvaraj Krishnamoorthy, Srikar Peesari, Ashish Ghai, Dongxiang Liao
  • Patent number: 10846418
    Abstract: A Data Storage Device (DSD) or a server is set to an unlocked state to allow access to a memory of the DSD or to a DSD of the server. Communication is established with an access station using a wireless communication interface, and an access code is received from the access station via the wireless communication interface. If the received access code is determined to be valid, the DSD or server is set to the unlocked state. According to another aspect, communication is established with a DSD or a server using a wireless communication interface, and an access code is generated and sent to the DSD or the server for setting the DSD or the server to the unlocked state.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: November 24, 2020
    Assignee: Western Digital Technologies, Inc.
    Inventors: Daniel Joseph Linnen, Avinash Rajagiri, Srikar Peesari, Ashish Ghai, Dongxiang Liao, Rohit Sehgal
  • Patent number: 10776277
    Abstract: A partial memory die comprises a memory structure that includes a first plane of non-volatile memory cells and a second plane of non-volatile memory cells. The second plane of non-volatile memory cells is incomplete. A first buffer is connected to the first plane. A second buffer is connected to the second plane. A data path circuit is connected to an input interface, the first buffer and the second buffer. The data path circuit is configured to map data received at the input interface and route the mapped data to either the first buffer or the second buffer. An inter-plane re-mapping circuit is connected to the first buffer and the second buffer, and is configured to re-map data from the first buffer and store the re-mapped data in the second buffer for programming into the second plane.
    Type: Grant
    Filed: October 31, 2017
    Date of Patent: September 15, 2020
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Daniel Linnen, Srikar Peesari, Kirubakaran Periyannan, Avinash Rajagiri, Shantanu Gupta, Jagdish Sabde, Ashish Ghai, Deepak Bharadwaj
  • Publication number: 20190294507
    Abstract: A first entropy indicator is calculated at a first time for a collection of data stored in at least one memory. A second entropy indicator is calculated at a second time for the collection of data. The first entropy indicator is compared with the second entropy indicator. Based on the comparison, it is determined whether to back up the collection of data and/or whether to retain an earlier backup of the collection of data.
    Type: Application
    Filed: March 20, 2018
    Publication date: September 26, 2019
    Applicants: Western Digital Technologies, Inc., Western Digital Technologies, Inc.
    Inventors: Daniel Joseph Linnen, Ashish Ghai, Avinash Rajagiri, Srikar Peesari
  • Publication number: 20190188403
    Abstract: A Data Storage Device (DSD) or a server is set to an unlocked state to allow access to a memory of the DSD or to a DSD of the server. Communication is established with an access station using a wireless communication interface, and an access code is received from the access station via the wireless communication interface. If the received access code is determined to be valid, the DSD or server is set to the unlocked state. According to another aspect, communication is established with a DSD or a server using a wireless communication interface, and an access code is generated and sent to the DSD or the server for setting the DSD or the server to the unlocked state.
    Type: Application
    Filed: December 20, 2017
    Publication date: June 20, 2019
    Inventors: Daniel Joseph Linnen, Avinash Rajagiri, Srikar Peesari, Ashish Ghai, Dongxiang Liao, Rohit Sehgal
  • Publication number: 20190187553
    Abstract: An apparatus is provided that includes a reticle including a die, the reticle configured to increase a number of partial die that can be successfully used as partially operable die.
    Type: Application
    Filed: December 18, 2017
    Publication date: June 20, 2019
    Applicant: SANDISK TECHNOLOGIES LLC
    Inventors: Daniel J. Linnen, Jianhua Zhu, Srikar Peesari, Kirubakaran Periyannan, Avinash Rajagiri, Shantanu Gupta, Jagdish Sabde, Ashish Ghai, Deepak Bharadwaj
  • Patent number: 10324859
    Abstract: Certain apparatuses, systems, methods, and computer program products are used for multi-plane memory management. An apparatus includes a failure detection circuit that detects a failure of a storage element during an operation. An apparatus includes a test circuit that performs a test on a storage element. An apparatus includes a recycle circuit that enables a portion of a storage element for use in operations in response to the portion of the storage element passing a test.
    Type: Grant
    Filed: June 26, 2017
    Date of Patent: June 18, 2019
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Daniel Joseph Linnen, Ashish Ghai, Dongxiang Liao, Srikar Peesari, Avinash Rajagiri, Philip Reusswig, Bin Wu
  • Patent number: 10290354
    Abstract: A partial memory die is missing one or more components. One example of a partial memory die includes an incomplete memory structure such that the partial memory die is configured to successfully perform programming, erasing and reading of the incomplete memory structure.
    Type: Grant
    Filed: October 31, 2017
    Date of Patent: May 14, 2019
    Assignee: SanDisk Technologies LLC
    Inventors: Daniel Linnen, Srikar Peesari, Kirubakaran Periyannan, Avinash Rajagiri, Shantanu Gupta, Jagdish Sabde, Ashish Ghai, Deepak Bharadwaj, Sukhminder Singh Lobana, Shrikar Bhagath
  • Publication number: 20190130978
    Abstract: A partial memory die is missing one or more components. One example of a partial memory die includes an incomplete memory structure such that the partial memory die is configured to successfully perform programming, erasing and reading of the incomplete memory structure.
    Type: Application
    Filed: October 31, 2017
    Publication date: May 2, 2019
    Applicant: SANDISK TECHNOLOGIES LLC
    Inventors: Daniel Linnen, Srikar Peesari, Kirubakaran Periyannan, Avinash Rajagiri, Shantanu Gupta, Jagdish Sabde, Ashish Ghai, Deepak Bharadwaj, Sukhminder Singh Lobana, Shrikar Bhagath
  • Publication number: 20190129861
    Abstract: A partial memory die comprises a memory structure that includes a first plane of non-volatile memory cells and a second plane of non-volatile memory cells. The second plane of non-volatile memory cells is incomplete. A first buffer is connected to the first plane. A second buffer is connected to the second plane. A data path circuit is connected to an input interface, the first buffer and the second buffer. The data path circuit is configured to map data received at the input interface and route the mapped data to either the first buffer or the second buffer. An inter-plane re-mapping circuit is connected to the first buffer and the second buffer, and is configured to re-map data from the first buffer and store the re-mapped data in the second buffer for programming into the second plane.
    Type: Application
    Filed: October 31, 2017
    Publication date: May 2, 2019
    Applicant: SANDISK TECHNOLOGIES LLC
    Inventors: Daniel Linnen, Srikar Peesari, Kirubakaran Periyannan, Avinash Rajagiri, Shantanu Gupta, Jagdish Sabde, Ashish Ghai, Deepak Bharadwaj
  • Patent number: 10242750
    Abstract: Techniques are presented for testing the high-speed data path between the IO pads and the read/write buffer of a memory circuit without the use of an external test device. In an on-chip process, a data test pattern is transferred at a high data rate between the read/write register and a source for the test pattern, such as register for this purpose or the read/write buffer of another plane. The test data after the high-speed transfer is then checked against its expected, uncorrupted value, such as by transferring it back at a lower speed for comparison or by transferring the test data a second time, but at a lower rate, and comparing the high transfer rate copy with the lower transfer rate copy at the receiving end of the transfers.
    Type: Grant
    Filed: May 31, 2017
    Date of Patent: March 26, 2019
    Assignee: SanDisk Technologies LLC
    Inventors: Daniel Linnen, Srikar Peesari, Kirubakaran Periyannan, Shantanu Gupta, Avinash Rajagiri, Dongxiang Liao, Jagdish Sabde, Rajan Paudel
  • Publication number: 20180373644
    Abstract: Apparatuses, systems, methods, and computer program products are disclosed for multi-plane memory management. An apparatus includes a failure detection circuit that detects a failure of a storage element during an operation. An apparatus includes a test circuit that performs a test on a storage element. An apparatus includes a recycle circuit that enables a portion of a storage element for use in operations in response to the portion of the storage element passing a test.
    Type: Application
    Filed: June 26, 2017
    Publication date: December 27, 2018
    Applicant: Western Digital Technologies, Inc.
    Inventors: Daniel Joseph Linnen, Ashish Ghai, Dongxiang Liao, Srikar Peesari, Avinash Rajagiri, Philip Reusswig, Bin Wu
  • Publication number: 20180350445
    Abstract: Techniques are presented for testing the high-speed data path between the IO pads and the read/write buffer of a memory circuit without the use of an external test device. In an on-chip process, a data test pattern is transferred at a high data rate between the read/write register and a source for the test pattern, such as register for this purpose or the read/write buffer of another plane. The test data after the high-speed transfer is then checked against its expected, uncorrupted value, such as by transferring it back at a lower speed for comparison or by transferring the test data a second time, but at a lower rate, and comparing the high transfer rate copy with the lower transfer rate copy at the receiving end of the transfers.
    Type: Application
    Filed: May 31, 2017
    Publication date: December 6, 2018
    Applicant: SANDISK TECHNOLOGIES LLC
    Inventors: Daniel Linnen, Srikar Peesari, Kirubakaran Periyannan, Shantanu Gupta, Avinash Rajagiri, Dongxiang Liao, Jagdish Sabde, Rajan Paudel
  • Patent number: 9711227
    Abstract: To prevent data loss due to latent defects, a non-volatile memory system will use a leakage detection circuit to test for small amounts of leakage that indicate that the memory is susceptible to failure.
    Type: Grant
    Filed: April 28, 2016
    Date of Patent: July 18, 2017
    Assignee: SanDisk Technologies LLC
    Inventors: Ashish Ghai, Yuvaraj Krishnamoorthy, Ekamdeep Singh, Kalpana Vakati, Maythin Uthayopas, Mark Shlick, Srikar Peesari