Patents by Inventor Srinivas Nemani
Srinivas Nemani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150042017Abstract: Embodiments include systems, apparatuses, and methods of three-dimensional plasma printing or processing. In one embodiment, a method includes introducing chemical precursors into one or more point plasma sources, generating plasma in the one or more point plasma sources from the chemical precursors with one or more power sources, and locally patterning a substrate disposed over a stage with the generated plasma by moving the stage with respect to the one or more point plasma sources.Type: ApplicationFiled: October 25, 2013Publication date: February 12, 2015Applicant: APPLIED MATERIALS, INC.Inventors: Kartik RAMASWAMY, Troy DETRICK, Srinivas NEMANI, Ajey JOSHI
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Publication number: 20140187046Abstract: The invention relates to a method for forming spacers for a gate of a field effect transistor, the gate being situated above a layer of semiconductor material, comprising a step of forming a layer of nitride covering the transistor gate, the method being characterized in that it comprises: after the step of forming the layer of nitride, at least one step of modifying the layer of nitride by implantation of light ions in the layer of nitride in order to form a modified layer of nitride, the step of modification being performed so as not to modify the layer of nitride over its entire thickness at flanks of the gate, the step of modifying the layer of nitride by implantation being performed using a plasma comprising the light ions; at least one step of removing the modified layer of nitride by means of a selective etching of the modified layer of nitride vis-à-vis said semiconductor material and vis-à-vis the non-modified layer of nitrideType: ApplicationFiled: December 27, 2013Publication date: July 3, 2014Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT, APPLIED MATERIALS, Inc., CNRS Centre National de la Recherche ScientifiqueInventors: Nicolas POSSEME, Thibaut DAVID, Olivier JOUBERT, Torsten LILL, Srinivas NEMANI, Laurent VALLIER
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Publication number: 20140187035Abstract: The invention relates to a method of etching a layer of porous dielectric material, characterized in that the etching is performed in a plasma formed from at least one silicon-based gas mixed with oxygen (O2) and/or nitrogen (N2) so as to grow a passivation layer all along said etching, at least on flanks of the layer of porous dielectric material and wherein the silicon-based gas is taken from all the compounds of the type SixHy for which the ratio x/y is equal or greater than 0.3 or is taken from all the compounds of the following types: SixFy and SixCly, where x is the proportion of silicon (Si) in the gas and y is the proportion of fluorine (F) or chlorine (Cl) or hydrogen (H) in the gas.Type: ApplicationFiled: December 27, 2013Publication date: July 3, 2014Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT, APPLIED MATERIALS, Inc., CNRS Centre National de la Recherche ScientifiqueInventors: Nicolas POSSEME, Sebastien BARNOLA, Olivier JOUBERT, Srinivas NEMANI, Laurent VALLIER
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Publication number: 20140080276Abstract: A three-dimensional structure disposed on a substrate is processed so as to alter the etch rate of material disposed on at least one surface of the structure. In some embodiments, a conformal deposition of material is performed on the three-dimensional structure. Subsequently, an ion implant is performed on at least one surface of the three-dimensional structure. This ion implant serves to alter the etch rate of the material deposited on that structure. In some embodiments, the ion implant increases the etch rate of the material. In other embodiments, the ion implant decreases the etch rate. In some embodiments, ion implants are performed on more than one surface, such that the material on at least one surface is etched more quickly and material on at least one other surface is etched more slowly.Type: ApplicationFiled: September 13, 2013Publication date: March 20, 2014Inventors: Adam Brand, Srinivas Nemani, John J. Hautala, Ludovic Godet, Yuri Erokhin
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Publication number: 20130105303Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.Type: ApplicationFiled: October 12, 2012Publication date: May 2, 2013Inventors: Dmitry LUBOMIRSKY, Srinivas NEMANI, Ellie YIEH, Sergey G. BELOSTOTSKIY
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Publication number: 20080057740Abstract: Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is disposed. A plasma is formed from the carbon precursor in the substrate processing chamber. A carbon film is deposited over the substrate with the plasma. A temperature of the substrate is maintained while depositing the carbon film less than 500° C. The deposited carbon film is exposed to electromagnetic radiation for a period less than 10 ms, and has an extinction coefficient greater than 0.3 at a wavelength comprised by the electromagnetic radiation.Type: ApplicationFiled: August 24, 2007Publication date: March 6, 2008Applicant: Applied Materials, Inc.Inventors: Jeffrey Munro, Srinivas Nemani, Young Lee, Marlon Menezes, Christopher Bencher, Vijay Parihar
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Publication number: 20080026597Abstract: Methods of making a silicon oxide layer on a substrate are described. The methods may include forming the silicon oxide layer on the substrate in a reaction chamber by reacting an atomic oxygen precursor and a silicon precursor and depositing reaction products on the substrate. The atomic oxygen precursor is generated outside the reaction chamber. The methods also include heating the silicon oxide layer at a temperature of about 600° C. or less, and exposing the silicon oxide layer to an induced coupled plasma. Additional methods are described where the deposited silicon oxide layer is cured by exposing the layer to ultra-violet light, and also exposing the layer to an induced coupled plasma.Type: ApplicationFiled: May 25, 2007Publication date: January 31, 2008Applicant: Applied Materials, Inc.Inventors: Jeffrey Munro, Srinivas Nemani
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Publication number: 20070298585Abstract: Methods to reduce film cracking in a dielectric layer are described. The methods may include the steps of depositing a first dielectric film on a substrate and removing a top portion of the first dielectric film by performing an etch on the film. The methods may also include depositing a second dielectric film over the etched first film, and removing a top portion of the second dielectric film. In addition, the methods may include annealing the first and second dielectric films to form the dielectric layer, where the removal of the top portions from the first and the second dielectric films reduces a stress level in the dielectric layer.Type: ApplicationFiled: June 20, 2007Publication date: December 27, 2007Applicant: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Srinivas Nemani, Ellie Yieh
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Publication number: 20070087522Abstract: A thin layer of silicon is deposited within a high aspect ratio feature to provide a template for selective deposition of oxide therein. In accordance with one embodiment, amorphous silicon is deposited within a shallow trench feature overlying an oxide liner grown therein. After exposure to sputtering to remove the amorphous silicon from outside of the trench, oxide is selectively deposited over the amorphous silicon to fill the trench from the bottom up without voids, thereby creating a shallow trench isolation (STI) structure. Deposition of the amorphous silicon or other silicon containing layers allows the selective oxide deposition step to be integrated with a thermally-grown oxide trench liner.Type: ApplicationFiled: December 1, 2006Publication date: April 19, 2007Applicant: Applied Materials, Inc.Inventors: Srinivas Nemani, Shankar Venkataraman
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Patent number: 7200460Abstract: A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.Type: GrantFiled: February 25, 2003Date of Patent: April 3, 2007Assignee: Applied Materials, Inc.Inventors: Francimar Campana, Srinivas Nemani, Michael Chapin, Shankar Venkataraman
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Publication number: 20070054504Abstract: A plasma treatment process for increasing the tensile stress of a silicon wafer is described. Following deposition of a dielectric layer on a substrate, the substrate is lifted to an elevated position above the substrate receiving surface and exposed to a plasma treatment process which treats both the top and bottom surface of the wafer and increases the tensile stress of the deposited layer. Another embodiment of the invention involves biasing of the substrate prior to plasma treatment to bombard the wafer with plasma ions and raise the temperature of the substrate. In another embodiment of the invention, a two-step plasma treatment process can be used where the substrate is first exposed to a plasma at a processing position directly after deposition, and then raised to an elevated position where both the top and bottom of the wafer are exposed to the plasma.Type: ApplicationFiled: September 7, 2005Publication date: March 8, 2007Applicant: APPLIED MATERIALS, INC.Inventors: Xiaolin Chen, Srinivas Nemani, DongQing Li, Jeffrey Munro, Marlon Menezes
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Patent number: 7176105Abstract: A thin layer of silicon is deposited within a high aspect ratio feature to provide a template for selective deposition of oxide therein. In accordance with one embodiment, amorphous silicon is deposited within a shallow trench feature overlying an oxide liner grown therein. After exposure to sputtering to remove the amorphous silicon from outside of the trench, oxide is selectively deposited over the amorphous silicon to fill the trench from the bottom up without voids, thereby creating a shallow trench isolation (STI) structure. Deposition of the amorphous silicon or other silicon containing layers allows the selective oxide deposition step to be integrated with a thermally-grown oxide trench liner.Type: GrantFiled: June 1, 2004Date of Patent: February 13, 2007Assignee: Applied Materials, Inc.Inventors: Srinivas Nemani, Shankar Venkataraman
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Publication number: 20060198769Abstract: Method and apparatus for abating F2 from by-products generated during cleaning of a processing chamber. F2 abatement is efficiently performed by directly injecting H2 in line with a foreline exiting the processing chamber. A tube which is highly resistant to oxidation and corrosive gases, even at high temperature, is connected in line with the foreline as part of the exhaust line of the processing chamber. A cooling jacket may be provided for cooling the tube, since the reaction between F2 and H2 is exothermic. A pressure monitoring arrangement may also be employed to insure that pressure within a hydrogen line, that feeds the injection of H2 into the tube, does not exceed a predetermined pressure value.Type: ApplicationFiled: April 21, 2006Publication date: September 7, 2006Applicant: Applied Materials, Inc.Inventors: Himanshu Pokharna, Phong Le, Srinivas Nemani
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Publication number: 20060178003Abstract: A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a process gas comprising a germanium source, a silicon source and an oxidizing agent into the substrate processing chamber; forming a high density plasma that has simultaneous deposition and sputtering components from the process gas to deposit a dielectric film comprising silicon, germanium and oxygen; and during the step of forming a high density plasma, maintaining a pressure within the substrate processing chamber of less than 100 mTorr while allowing the dielectric film to be heated above its glass transition temperature.Type: ApplicationFiled: February 10, 2005Publication date: August 10, 2006Applicant: Applied Materials, Inc.Inventors: Padmanabhan Krishnaraj, Michael Cox, Bruno Geoffrion, Srinivas Nemani
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Publication number: 20060141805Abstract: A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.Type: ApplicationFiled: February 21, 2006Publication date: June 29, 2006Inventors: Srinivas Nemani, Li-Qun Xia, Dian Sugiarto, Ellie Yieh, Ping Xu, Francimar Campana-Schmitt, Jia Lee
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Publication number: 20060046508Abstract: A silicon oxide film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A liquid Si—C—O—H precursor is vaporized. A flow of the vaporized liquid Si—C—O—H precursor is provided to the substrate processing chamber. A gaseous oxidizer is also flowed to the substrate processing chamber. A deposition plasma is generated inductively from the precursor and the oxidizer in the substrate processing chamber, and the silicon oxide film is deposited over the substrate and within the gap with the deposition plasma.Type: ApplicationFiled: September 1, 2004Publication date: March 2, 2006Applicant: APPLIED MATERIALS, INC. A Delaware corporationInventors: Srinivas Nemani, Young Lee
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Publication number: 20050266655Abstract: A thin layer of silicon is deposited within a high aspect ratio feature to provide a template for selective deposition of oxide therein. In accordance with one embodiment, amorphous silicon is deposited within a shallow trench feature overlying an oxide liner grown therein. After exposure to sputtering to remove the amorphous silicon from outside of the trench, oxide is selectively deposited over the amorphous silicon to fill the trench from the bottom up without voids, thereby creating a shallow trench isolation (STI) structure. Deposition of the amorphous silicon or other silicon containing layers allows the selective oxide deposition step to be integrated with a thermally-grown oxide trench liner.Type: ApplicationFiled: June 1, 2004Publication date: December 1, 2005Applicant: Applied Materials Inc.Inventors: Srinivas Nemani, Shankar Venkataraman
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Publication number: 20050233576Abstract: Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.Type: ApplicationFiled: April 28, 2005Publication date: October 20, 2005Inventors: Ju-Hyung Lee, Ping Xu, Shankar Venkataraman, Li-Qun Xia, Fei Han, Ellie Yieh, Srinivas Nemani, Kangsub Yim, Farhad Moghadam, Ashok Sinha, Yi Zheng
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Publication number: 20050211265Abstract: Methods and apparatus for cleaning deposition chambers are presented. The cleaning methods include the use of a remote plasma source to generate reactive species from a cleaning gas to clean deposition chambers. A flow of helium or argon may be used during chamber cleaning. Radio frequency power may also be used in combination with a remote plasma source to clean deposition chambers.Type: ApplicationFiled: May 19, 2005Publication date: September 29, 2005Inventors: Yi Zheng, Vinita Singh, Srinivas Nemani, Chen-an Chen, Ju-Hyung Lee, Shankar Venkataraman
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Publication number: 20050153073Abstract: The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group to a substrate surface at deposition conditions sufficient to deposit a non-cured film comprising the at least one cyclic group on the substrate surface. The method further includes substantially removing the at least one cyclic group from the non-cured film using an electron beam at curing conditions sufficient to provide a dielectric constant less than 2.5 and a hardness greater than 0.5 GPa.Type: ApplicationFiled: March 9, 2005Publication date: July 14, 2005Inventors: Yi Zheng, Srinivas Nemani, Li-Qun Xia, Eric Hollar, Kang Yim