Abstract: A process for synthesizing a Mn4+ doped phosphor includes contacting a precursor of formula I, Ax[MFy]:Mn4+?? I at any temperature in a range from about 200° C. to about 700° C. with a fluorine-containing oxidizing agent in gaseous form; maintaining the temperature during a contact period of at least one hour; and, after the contact period, reducing the temperature at a rate of ?5° C. per minute; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7.

Abstract: A process for preparing a Mn+4 doped phosphor of formula I Ax[MFy]:Mn+4?? I includes gradually adding a first solution to a second solution and periodically discharging the product liquor from the reactor while volume of the product liquor in the reactor remains constant; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7. The first solution includes a source of M and HF and the second solution includes a source of Mn to a reactor in the presence of a source of A.

Abstract: A lighting apparatus is presented. The lighting apparatus includes a semiconductor light source, a color stable Mn4+ doped phosphor and a quantum dot material, each of the color stable Mn4+ doped phosphor and the quantum dot material being radiationally coupled to the semiconductor light source. A percentage intensity loss of the color stable Mn4| doped phosphor after exposure to a light flux of at least 20 w/cm2 at a temperature of at least 50 degrees Celsius for at least 21 hours is ?4%. A backlight device including the lighting apparatus is also presented.

Abstract: A process for synthesizing a Mn4+ doped phosphor includes contacting a precursor of formula I, Ax(M1?z,Mnz)Fy??I at an elevated temperature with a fluorine-containing oxidizing agent in gaseous form to form the Mn4+ doped phosphor; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and 0.03?z?0.10.

Abstract: A process for synthesizing a Mn4+ doped phosphor includes contacting a precursor of formula I, at an elevated temperature with a fluorine-containing oxidizing agent in gaseous form to form the color stable Mn4+ doped phosphor; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and amount of Mn ranges from about 0.9 wt % to about 4 wt %, based on total weight.

Abstract: A process for synthesizing a Mn4+ doped phosphor includes contacting a precursor of formula I, Ax[MFy]:Mn4+??I at any temperature in a range from about 200° C. to about 700° C. with a fluorine-containing oxidizing agent in gaseous form; maintaining the temperature during a contact period of at least one hour; and, after the contact period, reducing the temperature at a rate of ?5° C. per minute; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7.

Abstract: A process for synthesizing a manganese (Mn4+) doped phosphor includes milling particles of the a phosphor precursor of formula I, and contacting the milled particles with a fluorine-containing oxidizing agent at an elevated temperature Ax[MFy]:Mn4+??(I) wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7.

Abstract: A light extraction structure that includes a composition of a base material and a scattering material disposed within the base material. The scattering material is a metal oxide, and the difference between the refractive indices of the base material and the scattering material is at least +/?0.05.

Abstract: Optoelectronic devices that have enhanced internal outcoupling are disclosed. The devices include a substrate, an anode, a cathode, an electroluminescent layer, and a hole injecting layer. The hole injecting layer includes inorganic nanoparticles that have a bimodal particle size distribution and which are dispersed in an organic matrix.

Abstract: Optoelectronic devices that have enhanced internal outcoupling are disclosed. The devices include a substrate, an anode, a cathode, an electroluminescent layer, and a hole injecting layer. The hole injecting layer includes inorganic nanoparticles that have a bimodal particle size distribution and which are dispersed in an organic matrix.

Abstract: Optoelectronic devices with enhanced internal outcoupling include a substrate, an anode, a cathode, an electroluminescent layer, and an electron transporting layer comprising inorganic nanoparticles dispersed in an organic matrix.

Abstract: Monodentate gold ethynyl complexes having a gold-carbon bond and a gold-phosphorous bond, specifically, of formula I, may be useful in optoelectric devices, wherein Ar1 and Ar2 are independently monocyclic or polycyclic aryl, unsubstituted or substituted with one or more alkyl, alkenyl, alkoxy, aryl, aryloxy, fluoro, fluoroalkyl, or perfluoroalkyl; and R is substituted or unsubstituted aryl.