Abstract: Semiconductor packages and methods for forming semiconductor packages are disclosed. An example semiconductor package includes a substrate and a core. An insulator material is present over the core, and along a direction perpendicular to a first surface of the core, a portion of the insulator material is between the core and a first surface of the substrate. A via extends between the first surface of the core and a second surface of the core in the direction perpendicular to the first surface of the core. A bridge die is in a recess in the substrate. The bridge die is coupled with the via. An electronic component is coupled to an end of the via at a second surface of the substrate.

Abstract: Various embodiments disclosed relate to routing optical signals from silicon photonics, such as a photonic integrated circuit. The present disclosure includes a glass recirculatory layer with waveguides at varying heights to allow re-routing of such optical signals from silicon photonics, such as a photonic integrated circuit. Re-routing of optical signals can be accomplished in the glass recirculatory layer with reduced losses due to reduced intersections of waveguides therein.

Abstract: An electronic system comprising can have a substrate with a core layer formed from at least one layer of glass. The glass layers can each be stacked with a dielectric material disposed between each layer of glass. The glass layers can be prepatterned before assembly of the layered glass core system.

Abstract: Disclosed herein are microelectronics package architectures utilizing photo-integrated glass interposers and photonic integrated glass layers and methods of manufacturing the same. The microelectronics packages may include an organic substrate, a photonic integrated glass layer, and a glass interpose. The organic substrate may define through substrate vias. The photonic integrated glass layer may be attached to the organic substrate. The photonic integrated glass layer may include photo detectors. The glass interposer may be attached to the organic substrate. The glass interposer may define through glass vias in optical communication with the photo detectors.

Abstract: An electronic device includes a substrate including a core layer; buildup layers on a first surface of the core layer, the buildup layers including first contact pads below the top surface of the buildup layers and second contact pads on a top surface of the buildup layers; and a discrete passive electronic component disposed in the buildup layers, the discrete component including bottom contact pads on a bottom surface of the discrete component and top contact pads on a top surface of the discrete component. The bottom contact pads of the discrete component are bonded to the first contacts pads of the buildup layers and the top contact pads of the discrete component are electrically connected to the second contact pads of the buildup layers.

Abstract: Disclosed herein are microelectronics package architectures utilizing in-situ high surface area capacitor in substrate packages and methods of manufacturing the same. The substrates may include an anode material, a cathode material, and a conductive material. The anode material may have an anode surface that may define a plurality of anode peaks and anode valleys. The cathode material may have a cathode surface that may define a plurality of cathode peaks and cathode valleys complementary to the plurality of anode peaks and anode valleys. The conductive material may be located at the anode peaks.

Abstract: Various embodiments disclosed relate to embedded components in glass core layers for semiconductor assemblies. The present disclosure includes a semiconductor assembly with a glass core having one or more cavities and a component embedded into the glass core at the one or more cavities portion, the component at least partially embedded in the glass core, and a semiconductor die attached to the substrate.

Abstract: Various embodiments disclosed relate to embedded components in glass core layers for semiconductor assemblies. The present disclosure includes a semiconductor assembly with a glass core having one or more cavities and a component embedded into the glass core at the one or more cavities portion, the component at least partially embedded in the glass core, and a semiconductor die attached to the substrate.

Abstract: Various embodiments disclosed relate to embedded components in glass core layers for semiconductor assemblies. The present disclosure includes a semiconductor assembly with a glass core having one or more cavities and a component embedded into the glass core at the one or more cavities portion, the component at least partially embedded in the glass core, and a semiconductor die attached to the substrate.

Abstract: An electronic device includes a substrate including a core layer; a cavity formed in the core layer, wherein the cavity includes sidewalls plated with a conductive material; a prefabricated passive electronic component disposed in the cavity; and a cavity sidewall connection providing electrical continuity from the plated cavity sidewalls to a first surface of the substrate and to a second surface of the substrate.

Abstract: An electronic device includes a substrate including a glass core layer and first contact pads on a first surface of the glass core layer; one or more discrete passive electronic components disposed on the first surface of the glass core layer, the one or more discrete passive electronic components including second contact pads on a bottom surface of the one or more discrete passive electronic components; and hybrid bonds between the first contact pads of the glass core layer and the second contact pads of the one or more discrete passive electronic components.

Abstract: Disclosed herein are microelectronics package architectures having self-aligned air gaps and methods of manufacturing the same. The microelectronics packages may include first and second substrates, first and second traces, and a photosensitive material. The first trace may be attached to the first substrate and comprise a first sidewall. The second trace may be attached to the first substrate and comprise a second sidewall. The second traced may be spaced a distance from the first trace with the second sidewall facing the first sidewall. First and second portions of the photosensitive material may be attached to the first and second sidewalls, respectively. The second substrate may be attached to the first and second traces. The first and second substrates and the first and second traces may form the air gap in between the first and second traces.

Abstract: Disclosed herein are microelectronics package architectures utilizing open cavity interconnects for multi-die interconnect bridges and methods of manufacturing the same. The microelectronics packages may include a substrate, a first die, a solder resist layer, a first pad, and a bridge. The substrate may have a substrate surface. The solder resist layer may be connected to the substrate and may define an opening. The first pad may protrude from the substrate surface. The bridge may be located at least partially within the opening and in between the first die and the substrate. The bridge may include a first via that forms a first electrical pathway from the first pad to the first die.

Abstract: An apparatus, system, and method for in-situ three-dimensional (3D) thin-film capacitor (TFC) are provided. A 3D TFC can include a glass core, a through glass via (TGV) in the glass core including first conductive material, the first conductive material forming a first electrode of the 3D MIM capacitor, a second conductive material acting as a second electrode of the 3D MIM capacitor, and a dielectric material in contact with the first and second conductive materials, the dielectric material extending vertically and horizontally and physically separating the first and second conductive materials.

Abstract: Various examples provide a semiconductor patch. The patch includes a glass core having first and second opposed major surfaces extending in an x-y direction. The patch further includes a conductive via extending from the first major surface to the second major surface substantially in a z-direction. The patch further includes a bridge die embedded in a dielectric material in communication with the conductive via. The patch further includes an overmold at least partially encasing the glass core.

Abstract: Disclosed herein are microelectronics package architectures utilizing SiNx based surface finishes and methods of manufacturing the same. The microelectronics packages may include a core material, a first plurality of pads, and a silicon nitride layer. The first plurality of pads are attached to the core material. The silicon nitride layer is attached to the core material. The silicon nitride material defines respective openings to expose at least a portion of each of the first plurality of pads.

Abstract: An electronic device may include an integrated circuit, for instance a semiconductor die. The electronic device may include a substrate having a first layer and a second layer. The first and second layers may include interconnects recessed below a surface of the substrate. The substrate may include a passivation layer directly coupled with portions of the interconnects. A solder resist material may at least partially cover portions of the passivation layer directly coupled with the first interconnect surface.

Abstract: A substrate package comprises a substrate comprised of buildup layers. The substrate package can further include a passivating layer connected to the substrate and including a pocketed region. The pocketed region can include a first portion thinner than a second portion extending from the first portion. The substrate package can further include a solder ball encapsulated within the pocketed region. Other systems, apparatuses and methods are described.

Abstract: An electronic device includes a substrate including a core layer having a first surface and a second surface opposite the first surface, and at least one coaxial through-hole extending vertically through the core layer from the first surface to the second surface. The coaxial through-hole includes at least a first through-via that includes electrically conductive material extending through the core layer from the first surface to the second surface, and a conductive layer including the same or different electrically conductive material extending vertically through the core layer from the first surface to the second surface and surrounding the first through-via. The conductive layer is to be connected to a ground voltage and is electrically isolated from the first through-via.

Abstract: Disclosed herein are organic semiconductors using optical signaling on a microelectronics package and methods for manufacturing the same. The microelectronics packages may include a substrate, an acceptor, a donor, and a solder resist layer. The substrate may include a trace. The acceptor may be in electrical communication with the trace. The donor may be connected to the acceptor. The solder resist layer may be connected to the substrate and encapsulate a portion of at least the acceptor.