Abstract: Quantification of the passivation and the selectivity in deposition process is disclosed. The passivation is evaluated by calculating film thicknesses on pattern lines and spaces. An XPS signal is used, which is normalized with X-ray flux number. The method is efficient for calculating thickness in selective deposition process, wherein the thickness can be used as metric to measure selectivity. Measured photoelectrons for each of the materials can be expressed as a function of the thickness of the material overlaying it, adjusted by material constant and effective attenuation length. In selective deposition over a patterned wafer, the three expressions can be solved to determine the thickness of the intended deposition and the thickness of any unintended deposition over passivated pattern.

Abstract: Quantification of the passivation and the selectivity in deposition process is disclosed. The passivation is evaluated by calculating film thicknesses on pattern lines and spaces. An XPS signal is used, which is normalized with X-ray flux number. The method is efficient for calculating thickness in selective deposition process, wherein the thickness can be used as metric to measure selectivity. Measured photoelectrons for each of the materials can be expressed as a function of the thickness of the material overlaying it, adjusted by material constant and effective attenuation length. In selective deposition over a patterned wafer, the three expressions can be solved to determine the thickness of the intended deposition and the thickness of any unintended deposition over passivated pattern.

Abstract: Systems and methods for performing X-ray Photoelectron Spectroscopy (XPS) measurements in a semiconductor environment are disclosed. A reference element peak is selected and tracked as part of the measurement process. Peak shift of the reference element peak, in electron volts (eV) is tracked and applied to other portions of acquired spectrum to compensate for the shift, which results from surface charge fluctuation.

Abstract: Systems and methods for performing X-ray Photoelectron Spectroscopy (XPS) measurements in a semiconductor environment are disclosed. A reference element peak is selected and tracked as part of the measurement process. Peak shift of the reference element peak, in electron volts (eV) is tracked and applied to other portions of acquired spectrum to compensate for the shift, which results from surface charge fluctuation.

Abstract: A method of aligning substrates, e.g., semiconductor wafers, is provided in which a first substrate can be at least coarsely aligned atop a second substrate. Each substrate can have a pattern thereon, wherein the pattern of the first substrate can be aligned with a window of the first substrate. A return signal can be returned from simultaneously illuminating the patterns of the first and second substrates through the window in the first substrate. The return signal can be compared to at least one stored signal to determine relative misalignment between the first and second substrates. A position of at least one of the first and second substrates can be altered relative to a position of the other of the first and second substrates to address the misalignment.

Abstract: A traffic generator generates a plurality of traffic flows, with each of the traffic flows being associatable with one or more of a plurality of output interfaces of the traffic generator. In an illustrative embodiment, each of the output interfaces may have any desired combination of the traffic flows associated therewith. The traffic flows may be generated based on user selection of at least one of a protocol encapsulation, a packet size distribution model, a packet arrival time distribution model, a traffic model, and a packet payload description. Information characterizing one or more of the traffic flows may be stored as a traffic file in a memory associated with the traffic generator.

Abstract: A method of aligning substrates, e.g., semiconductor wafers, is provided in which a first substrate can be at least coarsely aligned atop a second substrate. Each substrate can have a pattern thereon, wherein the pattern of the first substrate can be aligned with a window of the first substrate. A return signal can be returned from simultaneously illuminating the patterns of the first and second substrates through the window in the first substrate. The return signal can be compared to at least one stored signal to determine relative misalignment between the first and second substrates. A position of at least one of the first and second substrates can be altered relative to a position of the other of the first and second substrates to address the misalignment.

Abstract: A traffic generator generates a plurality of traffic flows, with each of the traffic flows being associatable with one or more of a plurality of output interfaces of the traffic generator. In an illustrative embodiment, each of the output interfaces may have any desired combination of the traffic flows associated therewith. The traffic flows may be generated based on user selection of at least one of a protocol encapsulation, a packet size distribution model, a packet arrival time distribution model, a traffic model, and a packet payload description. Information characterizing one or more of the traffic flows may be stored as a traffic file in a memory associated with the traffic generator.