Patents by Inventor Staf Verhaegen

Staf Verhaegen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for high topography patterning
    Patent number: 8021989
    Abstract: One inventive aspect is related to a method for isolating structures of a semiconductor material, comprising providing a pattern of the semiconductor material comprising at least one elevated line, defining device regions in the pattern, the device regions each comprising at least said at least one elevated line, and modifying the conductive properties of the semiconductor material outside said device regions, such that the device regions are electrically isolated.
    Type: Grant
    Filed: May 26, 2006
    Date of Patent: September 20, 2011
    Assignee: IMEC
    Inventors: Staf Verhaegen, Axel Nackaerts
  • Method of making alternating phase shift masks
    Patent number: 7761837
    Abstract: One inventive aspect relates to a phase shift mask suitable for lithographic processing of a device, to a method of making such a mask and to lithographic processing using such a mask. The phase shift mask is made taking into account the threshold or dose that will be used for lithographic processing using the mask. In this way, image imbalance will be reduced in a significant focus-exposure processing window. In one embodiment, evaluation of the image imbalance is performed taking into account the processing windows for the different edges of the features of the pattern.
    Type: Grant
    Filed: October 3, 2006
    Date of Patent: July 20, 2010
    Assignee: IMEC
    Inventors: Lieve Van Look, Staf Verhaegen, Eric Hendrickx
  • Method for high topography patterning
    Publication number: 20070140637
    Abstract: One inventive aspect is related to a method for isolating structures of a semiconductor material, comprising providing a pattern of the semiconductor material comprising at least one elevated line, defining device regions in the pattern, the device regions each comprising at least said at least one elevated line, and modifying the conductive properties of the semiconductor material outside said device regions, such that the device regions are electrically isolated.
    Type: Application
    Filed: May 26, 2006
    Publication date: June 21, 2007
    Inventors: Staf Verhaegen, Axel Nackaerts
  • Alternating phase shift mask
    Publication number: 20070087273
    Abstract: One inventive aspect relates to a phase shift mask suitable for lithographic processing of a device, to a method of making such a mask and to lithographic processing using such a mask. The phase shift mask is made taking into account the threshold or dose that will be used for lithographic processing using the mask. In this way, image imbalance will be reduced in a significant focus-exposure processing window. In one embodiment, evaluation of the image imbalance is performed taking into account the processing windows for the different edges of the features of the pattern.
    Type: Application
    Filed: October 3, 2006
    Publication date: April 19, 2007
    Inventors: Lieve Look, Staf Verhaegen, Eric Hendrickx