Abstract: In a non-volatile electric memory system a memory unit and a read/write unit are provided as physically separate units. The memory unit is based on a memory material that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrodes and/or contacts are either provided in the memory unit or in the read/write unit and contacts are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be polarized into two discernible polarization states.

Abstract: A method of operating a passive matrix addressable ferroelectric device having a voltage pulse protocol with a pre-disturb and post-disturb cycle before and after a disturb generating operation cycle respectively in order to minimize the effect of disturb voltage on non-addressed memory cells, when such voltages are generated thereto in the operation cycle when It is applied for either a write or read operation.