Patents by Inventor Stanislav Vladislavovich Fronk

Stanislav Vladislavovich Fronk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor diode with voltage-dependent capacitance
    Patent number: 3935585
    Abstract: A semiconductor wafer constituting a diode with voltage-dependent capacitance, having an N-type base layer and two P-type layers forming together two P-N junctions. The area of one of the P-N junctions is 30 to 50 times greater than that of the other P-N junction. The larger P-N junction of the semiconductor diode is energized by a positive potential, thus becoming forward-biased, while the smaller junction is energized by a negative potential, becoming reverse-biased. The resulting barrier capacitance of the reverse-biased junction determines capacitance, and its variation with temperature is compensated by a simultaneously changing potential of the two P-N junctions.
    Type: Grant
    Filed: February 22, 1974
    Date of Patent: January 27, 1976
    Inventors: Stanislav Konstantinovich Korovin, Igor Ivanovich Kruglov, Konstantin Andreevich Preobrazhentsev, Jury Ivanovich Sidorov, Stanislav Vladislavovich Fronk