Patents by Inventor Stanley Detmar
Stanley Detmar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9779917Abstract: Embodiments of the present invention generally provide plasma etch process chamber improvements. An improved gas injection nozzle is provided for use at a central location of the lid of the chamber. The gas injection nozzle may be used in an existing plasma etch chamber and is configured to provide a series of conic gas flows across the surface of a substrate positioned within the chamber. In one embodiment, an improved exhaust kit for use in the plasma etch chamber is provided. The exhaust kit includes apparatus that may be used in an existing plasma etch chamber and is configured to provide annular flow of exhaust gases from the processing region of the chamber.Type: GrantFiled: September 9, 2014Date of Patent: October 3, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Stanley Detmar, Brian T. West, Ronald Vern Schauer
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Patent number: 8937017Abstract: Embodiments of the invention relate to a substrate etching method and apparatus. In one embodiment, a method for etching a substrate in a plasma etch reactor is provided that include flowing a backside process gas between a substrate and a substrate support assembly, and cyclically etching a layer on the substrate.Type: GrantFiled: January 29, 2010Date of Patent: January 20, 2015Assignee: Applied Materials, Inc.Inventors: Alan Cheshire, Stanley Detmar
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Publication number: 20140374509Abstract: Embodiments of the present invention generally provide plasma etch process chamber improvements. An improved gas injection nozzle is provided for use at a central location of the lid of the chamber. The gas injection nozzle may be used in an existing plasma etch chamber and is configured to provide a series of conic gas flows across the surface of a substrate positioned within the chamber. In one embodiment, an improved exhaust kit for use in the plasma etch chamber is provided. The exhaust kit includes apparatus that may be used in an existing plasma etch chamber and is configured to provide annular flow of exhaust gases from the processing region of the chamber.Type: ApplicationFiled: September 9, 2014Publication date: December 25, 2014Inventors: Stanley DETMAR, Brian T. WEST, Ronald Vern SCHAUER
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Patent number: 8828182Abstract: Embodiments of the present invention generally provide plasma etch process chamber improvements. An improved gas injection nozzle is provided for use at a central location of the lid of the chamber. The gas injection nozzle may be used in an existing plasma etch chamber and is configured to provide a series of conic gas flows across the surface of a substrate positioned within the chamber. In one embodiment, an improved exhaust kit for use in the plasma etch chamber is provided. The exhaust kit includes apparatus that may be used in an existing plasma etch chamber and is configured to provide annular flow of exhaust gases from the processing region of the chamber.Type: GrantFiled: February 9, 2011Date of Patent: September 9, 2014Assignee: Applied Materials, Inc.Inventors: Stanley Detmar, Brian T. West, Ronald Vern Schauer
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Publication number: 20120208300Abstract: A substrate etching method and apparatus are disclosed. In one embodiment, a method for etching is provided that includes, in a plasma processing chamber, etching a feature in a silicon layer using an etch recipe that includes cyclical etching and deposition substeps until an end point is reached, wherein an aspect ratio of the feature increases with a number of cyclical etching and deposition substeps performed over time until the end point is reached; and adjusting a recipe variable of the etch recipe in response to the current aspect ratio of the feature during etching to manage thickness of sidewall polymers when the feature becomes deeper to avoid closing the feature and preventing subsequent etching.Type: ApplicationFiled: April 25, 2012Publication date: August 16, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Alan Cheshire, Stanley Detmar
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Publication number: 20120152900Abstract: Methods and apparatus for gas delivery into plasma processing chambers are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having a processing volume, a substrate support disposed in the processing volume, an inductively coupled plasma source to generate an electric field within the processing volume that includes one or more regions of local maxima in the magnitude of the electric field, and one or more gas injectors to selectively direct a predominant portion of a process gas flowed through the one or more gas injectors into the one or more regions of local maxima.Type: ApplicationFiled: November 29, 2011Publication date: June 21, 2012Applicant: APPLIED MATERIALS, INC.Inventors: ROBERT P. CHEBI, STANLEY DETMAR, ALAN CHESHIRE, GABRIEL ROUPILLARD, ALFREDO GRANADOS
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Publication number: 20120103524Abstract: Plasma processing apparatus that provide an asymmetric plasma distribution within the processing apparatus are provided herein. In some embodiments, a plasma processing apparatus may include a process chamber having a processing volume with a substrate support disposed therein; and a first RF coil disposed above the substrate support to couple RF energy into the processing volume, wherein an electric field generated by RF energy moving along the first RF coil is asymmetric about a central axis of the substrate support. In some embodiments, a pump port is disposed asymmetrically with respect to the processing volume to remove one or more gases from the processing volume. In some embodiments, the first RF coil is asymmetrically disposed about the central axis of the substrate support.Type: ApplicationFiled: September 22, 2011Publication date: May 3, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Robert CHEBI, Alan CHESHIRE, Stanley DETMAR, Gabriel ROUPILLARD
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Publication number: 20110198417Abstract: Embodiments of the present invention generally provide plasma etch process chamber improvements. An improved gas injection nozzle is provided for use at a central location of the lid of the chamber. The gas injection nozzle may be used in an existing plasma etch chamber and is configured to provide a series of conic gas flows across the surface of a substrate positioned within the chamber. In one embodiment, an improved exhaust kit for use in the plasma etch chamber is provided. The exhaust kit includes apparatus that may be used in an existing plasma etch chamber and is configured to provide annular flow of exhaust gases from the processing region of the chamber.Type: ApplicationFiled: February 9, 2011Publication date: August 18, 2011Applicant: APPLIED MATERIALS, INC.Inventors: STANLEY DETMAR, BRIAN T. WEST, RONALD VERN SCHAUER
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Publication number: 20100197138Abstract: Embodiments of the invention relate to a substrate etching method and apparatus. In one embodiment, a method for etching a substrate in a plasma etch reactor is provided that include flowing a backside process gas between a substrate and a substrate support assembly, and cyclically etching a layer on the substrate.Type: ApplicationFiled: January 29, 2010Publication date: August 5, 2010Applicant: APPLIED MATERIALS, INC.Inventors: Alan Cheshire, Stanley Detmar