Patents by Inventor Stefan A. Latsch

Stefan A. Latsch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6444762
    Abstract: A process for the continuous anionic polymerization or copolymerization of styrene or diene monomers using an alkali metal alkyl compound as polymerization initiator is carried out in the presence of an alkyl- or arylmetal compound of an element which occurs in at least divalent form as rate regulator, preferably under non-isothermal conditions and without back-mixing in a tubular or tube-bundle reactor, preferably using an alkyl- or arylmetal compound A of the formula R1M1 and an alkyl- or arylmetal compound B of the formula R2nM2 in a molar ratio between B and A of from 0.1:1 to 500:1, where M1 is Li, Na or K; R1 is hydrogen, C1-C20-alkyl, C6-C20-aryl, or C7-C20-alkyl-substituted aryl; M2 is an n-valent element from group 2a, 2b or 3a of the Periodic Table; and R2 is hydrogen, halogen, C1-C20-alkyl or C6-C20-aryl; and a special anionic polymerization initiator containing no Lewis base.
    Type: Grant
    Filed: February 17, 1999
    Date of Patent: September 3, 2002
    Assignee: BASF Aktiengesellschaft
    Inventors: Wolfgang Fischer, Konrad Knoll, Wolfgang Loth, Volker Warzelhan, Alain Deffieux, Philippe Desbois, Michel Fontanille, Stefan Lätsch, Christian Schade, Hermann Gausepohl
  • Patent number: 6303721
    Abstract: The anionic polymerization of dienes or copolymers of dienes and vinylaromatic monomers in a vinylaromatic monomer or monomer mixture to give homopolydienes or copolymers or mixed homopolydienes and copolymers is carried out in the presence of a metal alkyl or aryl of an element having a valence of at least two without addition of Lewis bases.
    Type: Grant
    Filed: February 17, 1999
    Date of Patent: October 16, 2001
    Assignee: BASF Aktiengesellschaft
    Inventors: Stefan Lätsch, Wolfgang Fischer, Hermann Gausepohl, Volker Warzelhan, Christian Schade
  • Patent number: 5368681
    Abstract: A method is disclosed for the deposition of crystalline diamond on a substrate such as a silicon wafer. A polymer (for example poly(methylmethacrylate)) is provided as a target for laser ablation using for example an ArF excimer laser or an Nd-Yag laser. The laser ablation is performed in the presence of a reactive gas such as oxygen or hydrogen. The substrate is heated to a temperature of between 450 and 700 degrees celsius.
    Type: Grant
    Filed: June 9, 1993
    Date of Patent: November 29, 1994
    Assignees: Hong Kong University of Science, Hong Kong University of Science and Technology, R and D Corporation Limited
    Inventors: Hiroyuki Hiraoka, Stefan A. Latsch, Rong-Fu Xiao