Patents by Inventor Stefan C. B. Mannsfeld

Stefan C. B. Mannsfeld has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10155876
    Abstract: Various embodiments include apparatus and methods of forming an apparatus using a solution shearing process. An example method includes providing a shearing blade on a portion of a substrate coated with a polymeric conductor material and controlling generation of a transparent and conductive polymer film on the substrate by moving the shearing blade in a direction, to generate shear stress to the polymeric conductor material, and according to shearing deposition parameters.
    Type: Grant
    Filed: October 27, 2016
    Date of Patent: December 18, 2018
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Zhenan Bao, Sean C. Andrews, Brian J. Worfolk, Stefan C. B. Mannsfeld
  • Publication number: 20170114240
    Abstract: Various embodiments include apparatus and methods of forming an apparatus using a solution shearing process. An example method includes providing a shearing blade on a portion of a substrate coated with a polymeric conductor material and controlling generation of a transparent and conductive polymer film on the substrate by moving the shearing blade in a direction, to generate shear stress to the polymeric conductor material, and according to shearing deposition parameters.
    Type: Application
    Filed: October 27, 2016
    Publication date: April 27, 2017
    Inventors: Zhenan Bao, Sean C. Andrews, Brian J. Worfolk, Stefan C. B. Mannsfeld
  • Publication number: 20080134961
    Abstract: Patterned single crystals and related devices are facilitated. According to an example embodiment of the present invention, organic semiconducting single-crystals are manufactured using a plurality of surface regions on a substrate. The diffusivity and/or the rate of desorption is controlled at each surface region and at the substrate to grow at least one organic semiconducting single crystal at each surface region from a vapor-phase organic material. This control is effected, for example, before and/or during the introduction of vapor-phase organic material to the surface regions. In some embodiments, the surface regions include an organic film such as octadecyltriethoxysilane (OTS), and in other embodiments, the surface regions include carbon nanotube bundles, either of which can be implemented to exhibit a surface roughness and/or other characteristics that facilitate selective crystal nucleation.
    Type: Application
    Filed: October 31, 2007
    Publication date: June 12, 2008
    Inventors: Zhenan Bao, Alejandro L. Briseno, Colin C. Reese, Stefan C. B. Mannsfeld, Shuhong Liu, Mang-Mang Ling