Patents by Inventor Stefan Fält

Stefan Fält has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NANOWIRE TUNNEL DIODE AND METHOD FOR MAKING THE SAME
    Publication number: 20120199187
    Abstract: The present invention provides a tunnel diode and a method for manufacturing thereof. The tunnel diode comprises a p-doped semiconductor region and an n-doped semiconductor region forming a pn-junction at least partly within a nanowire where semiconductor materials on different sides of the pn-junction are different such that a heterojuction is formed. The materials of the nanowire may be compound semiconductor materials. The heterojunction tunnel diode can be of type-I (Straddling gap), type-II (Staggered gap) or type-III (Broken gap).
    Type: Application
    Filed: October 22, 2010
    Publication date: August 9, 2012
    Applicant: Sol Voltaics AB
    Inventors: Magnus Borgström, Magnus Heurlin, Stefan Fält