Patents by Inventor Stefan Hölzig

Stefan Hölzig has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for smoothening III-N substrates
    Patent number: 8415766
    Abstract: A process for preparing smoothened III-N, in particular smoothened III-N substrate or III-N template, wherein III denotes at least one element of group III of the Periodic System, selected from Al, Ga and In, utilizes a smoothening agent comprising cubic boron nitride abrasive particles. The process provides large-sized III-N substrates or III-N templates having diameters of at least 40 mm, at a homogeneity of very low surface roughness over the whole substrate or wafer surface. In a mapping of the wafer surface with a white light interferometer, the standard deviation of the rms-values is 5% or lower, with a very good crystal quality at the surface or in surface-near regions, measurable, e.g., by means of rocking curve mappings and/or micro-Raman mappings.
    Type: Grant
    Filed: July 29, 2009
    Date of Patent: April 9, 2013
    Assignee: Freiberger Compound Materials GmbH
    Inventors: Stefan Hölzig, Gunnar Leibiger
  • PROCESS FOR SMOOTHENING III-N SUBSTRATES
    Publication number: 20100019352
    Abstract: A process for preparing smoothened III-N, in particular smoothened III-N substrate or III-N template, wherein III denotes at least one element of group III of the Periodic System, selected from Al, Ga and In, utilizes a smoothening agent comprising cubic boron nitride abrasive particles. The process provides large-sized III-N substrates or III-N templates having diameters of at least 40 mm, at a homogeneity of very low surface roughness over the whole substrate or wafer surface. In a mapping of the wafer surface with a white light interferometer, the standard deviation of the rms-values is 5% or lower, with a very good crystal quality at the surface or in surface-near regions, measurable, e.g., by means of rocking curve mappings and/or micro-Raman mappings.
    Type: Application
    Filed: July 29, 2009
    Publication date: January 28, 2010
    Inventors: Stefan Hölzig, Gunnar Leibiger
  • Process for smoothening III-N substrates
    Patent number: 7585772
    Abstract: A process for preparing smoothened III-N, in particular smoothened III-N substrate or III-N template, wherein III denotes at least one element of group III of the Periodic System, selected from Al, Ga and In, utilizes a smoothening agent comprising cubic boron nitride abrasive particles. The process provides large-sized III-N substrates or III-N templates having diameters of at least 40 mm, at a homogeneity of very low surface roughness over the whole substrate or wafer surface. In a mapping of the wafer surface with a white light interferometer, the standard deviation of the rms-values is 5% or lower, with a very good crystal quality at the surface or in surface-near regions, measurable, e.g., by means of rocking curve mappings and/or micro-Raman mappings.
    Type: Grant
    Filed: July 26, 2007
    Date of Patent: September 8, 2009
    Assignee: Freiberger Compound Materials GmbH
    Inventors: Stefan Hölzig, Gunnar Leibiger