Abstract: In one embodiment, the optoelectronic semiconductor component comprises at least one semiconductor chip for generating a primary radiation, and also an optical body disposed optically downstream of the semiconductor chip. A reflector surrounds the optical body laterally all around in a positively locking manner and is configured for reflecting the primary radiation and visible light. The optical body has a base surface facing the semiconductor chip and an exit surface facing away from the semiconductor chip. The optical body tapers in a direction away from the semiconductor chip. A quotient of the base surface and a height of the optical body is between 1 mm and 30 mm inclusive.

Abstract: Optoelectronic radiation device, in particular for generating and emitting health-promoting and regenerative radiation, comprising: at least one or more optoelectronic radiation sources configured to generate infrared radiation, and at least one optoelectronic radiation source for generating white light, wherein the infrared radiation is in an infrared spectral range between 600 nm and 900 nm.

Abstract: An apparatus for presenting an image for a heads-up display includes three arrays of light-emitting diodes, wherein the light-emitting diodes of an array are arranged and output electromagnetic beams in an emission direction of an emission side of the array, the light-emitting diodes output an electromagnetic beam with a first opening angle in the emission direction, a collimation apparatus provided on the emission side at a specified spacing in front of the array of the light-emitting diodes, wherein the collimation apparatus reduces the first opening angles of the beams of the light-emitting diodes downstream of the collimation apparatus in the emission direction to a second opening angle, the second opening angle is smaller than the first opening angle, and a combination optical unit arranged downstream of the collimation apparatus in the emission direction, the combination optical unit superposes the electromagnetic rays from the three arrays to form an image for the head-up display.

Abstract: A semiconductor laser includes an edge-emitting laser diode, which has an active zone for generating laser radiation and a facet having a radiation exit region, and at least one photodiode. The facet is arranged on a main emission side of the laser diode. The photodiode is arranged in such a way that at least part of the laser radiation exiting at the facet reaches the photodiode.

Abstract: An optoelectronic component may include four semiconductor chips arranged on a substrate. A first semiconductor chip may be configured to emit electromagnetic radiation with a dominant wavelength ranging from about 610 to about 650 nm during operation. A second semiconductor chip may be configured to emit electromagnetic radiation with a dominant wavelength ranging from about 450 to about 475 nm during operation. A third semiconductor chip may be configured to emit electromagnetic radiation with color space coordinates of 0.3231±0.005 and 0.5408±0.005 in the CIE color space during operation. A fourth semiconductor chip may emit electromagnetic radiation having color space coordinates of 0.5638±0.005 and 0.4113±0.005 in the CIE color space during operation. The third and fourth semiconductor chips may have a conversion layer configured to convert a wavelength of the electromagnetic radiation emitted by the active region.

Abstract: In one embodiment, the optoelectronic semiconductor component comprises at least one semiconductor chip for generating a primary radiation, and also an optical body disposed optically downstream of the semiconductor chip. A reflector surrounds the optical body laterally all around in a positively locking manner and is configured for reflecting the primary radiation and visible light. The optical body has a base surface facing the semiconductor chip and an exit surface facing away from the semiconductor chip. The optical body tapers in a direction away from the semiconductor chip. A quotient of the base surface and a height of the optical body is between 1 mm and 30 mm inclusive.

Abstract: An optoelectronic component may include four semiconductor chips arranged on a substrate. A first semiconductor chip may be configured to emit electromagnetic radiation with a dominant wavelength ranging from about 610 to about 650 nm during operation. A second semiconductor chip may be configured to emit electromagnetic radiation with a dominant wavelength ranging from about 450 to about 475 nm during operation. A third semiconductor chip may be configured to emit electromagnetic radiation with color space coordinates of 0.3231±0.005 and 0.5408±0.005 in the CIE color space during operation. A fourth semiconductor chip may emit electromagnetic radiation having color space coordinates of 0.5638±0.005 and 0.4113±0.005 in the CIE color space during operation. The third and fourth semiconductor chips may have a conversion layer configured to convert a wavelength of the electromagnetic radiation emitted by the active region.

Abstract: An apparatus for presenting an image for a heads-up display includes three arrays of light-emitting diodes, wherein the light-emitting diodes of an array are arranged and output electromagnetic beams in an emission direction of an emission side of the array, the light-emitting diodes output an electromagnetic beam with a first opening angle in the emission direction, a collimation apparatus provided on the emission side at a specified spacing in front of the array of the light-emitting diodes, wherein the collimation apparatus reduces the first opening angles of the beams of the light-emitting diodes downstream of the collimation apparatus in the emission direction to a second opening angle, the second opening angle is smaller than the first opening angle, and a combination optical unit arranged downstream of the collimation apparatus in the emission direction, the combination optical unit superposes the electromagnetic rays from the three arrays to form an image for the head-up display.

Abstract: A surface-mountable multi-chip component includes a carrier having a first connection element, a second connection element and third connection element that are electrically insulated from one another. A first semiconductor chip is arranged on the first connection element and electrically connected to the first and second connection elements. The first connection element forms a first electrode and the second connection element forms a second electrode for the first semiconductor chip. A second semiconductor chip is arranged on the second connection element and electrically connected to the second and third connection elements. The third connection element forms a first electrode and the second connection element forms a second electrode for the second semiconductor chip. The second connection element forms a common cathode or anode for the first and second semiconductor chips during operation.

Abstract: Described is a holographic film (100) whose transmission and/or reflection properties vary periodically along at least one of its directions of principal extent, said film being designed for at least partial transmission (22, 28) of light (20, 26) of at least one first wavelength range that is irradiated from a multiplicity of periodically disposed illuminants (200) and that impinges on the holographic film (100). Also described are a lighting means (300), a backlighting means and a method for producing a holographic film (100).

Abstract: A surface-mountable multi-chip component includes a carrier having a first connection element, a second connection element and third connection element that are electrically insulated from one another. A first semiconductor chip is arranged on the first connection element and electrically connected to the first and second connection elements. The first connection element forms a first electrode and the second connection element forms a second electrode for the first semiconductor chip. A second semiconductor chip is arranged on the second connection element and electrically connected to the second and third connection elements. The third connection element forms a first electrode and the second connection element forms a second electrode for the second semiconductor chip. The second connection element forms a common cathode or anode for the first and second semiconductor chips during operation.

Abstract: Described is a holographic film (100) whose transmission and/or reflection properties vary periodically along at least one of its directions of principal extent, said film being designed for at least partial transmission (22, 28) of light (20, 26) of at least one first wavelength range that is irradiated from a multiplicity of periodically disposed illuminants (200) and that impinges on the holographic film (100). Also described are a lighting means (300), a backlighting means and a method for producing a holographic film (100).

Abstract: An illumination device contains a light-emitting semiconductor chip containing a plurality of individually drivable emission regions. The illumination device furthermore contains an optical element designed to shape light emitted by the emission regions to form a beam of rays. The illumination device is designed such that different beam profiles of the beam of rays can be set by the individually drivable emission regions.

Abstract: An illumination device contains a light-emitting semiconductor chip containing a plurality of individually drivable emission regions. The illumination device furthermore contains an optical element designed to shape light emitted by the emission regions to form a beam of rays. The illumination device is designed such that different beam profiles of the beam of rays can be set by the individually drivable emission regions.

Abstract: Circuit arrangements for the operation of a pulse laser diode and methods for operating a pulse laser diode include a current source to supply a direct current to the pulse laser diode. The circuit arrangement can provide operation of the pulse laser diode that can be stable and without unintentional shifts in wavelength.

Abstract: A device having at least one radiation-emitting semiconductor component (1), the semiconductor component being assigned at least one electrical heating element (2) designed for heating the semiconductor component. Furthermore, a method for the temperature stabilization of the operating temperature of a radiation-emitting semiconductor component (1) of a device is specified, the semiconductor component being assigned an electrical heating element (2), by means of which the semiconductor component is heated when the operating temperature of the semiconductor component falls below a predetermined desired value of the operating temperature. The semiconductor component can be assigned a temperature sensor (4) for monitoring the operating temperature of the semiconductor component.

Abstract: Circuit arrangements for the operation of a pulse laser diode and methods for operating a pulse laser diode include a current source to supply a direct current to the pulse laser diode. The circuit arrangement can provide operation of the pulse laser diode that can be stable and without unintentional shifts in wavelength.

Abstract: A radiation-emitting optoelectronic component (1) which is connected to a heat sink (3) and is intended for pulsed operation with the pulse duration D, and in which temperature changes of the optoelectronic component (1) take place with a thermal time constant ? during pulsed operation. The thermal time constant ? is matched to the pulse duration D in order to reduce the amplitude of the temperature changes.

Abstract: A device having at least one radiation-emitting semiconductor component (1), the semiconductor component being assigned at least one electrical heating element (2) designed for heating the semiconductor component. Furthermore, a method for the temperature stabilization of the operating temperature of a radiation-emitting semiconductor component (1) of a device is specified, the semiconductor component being assigned an electrical heating element (2), by means of which the semiconductor component is heated when the operating temperature of the semiconductor component falls below a predetermined desired value of the operating temperature. The semiconductor component can be assigned a temperature sensor (4) for monitoring the operating temperature of the semiconductor component.