Abstract: In certain desirable embodiments, the present invention relates to the use of 15N isotopes into GaAsN, InAsN or GaSbN films for ion beam analysis. A semiconductor-nitride assembly for growing and analyzing crystal growth in a group III-V semiconductor sample that includes: a substrate; a buffer layer deposited on the substrate, a nitrogen gas injector to incorporate enriched nitrogen gas and the nitrogen gas injector includes a concentration of enriched nitrogen gas, a thin film consisting of at least one group III element containing compound where at least one group III element is covalently bonded with the nitrogen in the presence of the same or different group V element of the buffer layer, and a proton beam to analyze the incorporation of the nitrogen gas in the thin film layer is described.

Abstract: In certain desirable embodiments, the present invention relates to the use of 15N isotopes into GaAsN, InAsN or GaSbN films for ion beam analysis. A semiconductor-nitride assembly for growing and analyzing crystal growth in a group III-V semiconductor sample that includes: a substrate; a buffer layer deposited on the substrate, a nitrogen gas injector to incorporate enriched nitrogen gas and the nitrogen gas injector includes a concentration of enriched nitrogen gas, a thin film consisting of at least one group III element containing compound where at least one group III element is covalently bonded with the nitrogen in the presence of the same or different group V element of the buffer layer, and a proton beam to analyze the incorporation of the nitrogen gas in the thin film layer is described.

Abstract: A control system and method for controlling temperatures while performing a MBE deposition process, wherein the control system comprises a MBE growth structure; a heater adapted to provide heat for the MBE deposition process on the MBE growth structure; and a control computer adapted to receive a plurality of dynamic feedback control signals derived from the MBE growth structure; switch among a plurality of control modes corresponding with the plurality of dynamic feedback control signals; and send an output power signal to the heater to control the heating for the MBE deposition process based on a combination of the plurality of control modes. In one embodiment, the plurality of dynamic feedback control signals comprises thermocouple signals and pyrometer signals.

Abstract: In certain desirable embodiments, the present invention relates to the use of 15N isotopes into GaAsN, InAsN or GaSbN films for ion beam analysis. A semiconductor-nitride assembly for growing and analyzing crystal growth in a group III-V semiconductor sample that includes: a substrate; a buffer layer deposited on the substrate, a nitrogen gas injector to incorporate enriched nitrogen gas and the nitrogen gas injector includes a concentration of enriched nitrogen gas, a thin film consisting of at least one group III element containing compound where at least one group III element is covalently bonded with the nitrogen in the presence of the same or different group V element of the buffer layer, and a proton beam to analyze the incorporation of the nitrogen gas in the thin film layer is described.

Abstract: A control system and method for controlling temperatures while performing a MBE deposition process, wherein the control system comprises a MBE growth structure; a heater adapted to provide heat for the MBE deposition process on the MBE growth structure; and a control computer adapted to receive a plurality of dynamic feedback control signals derived from the MBE growth structure; switch among a plurality of control modes corresponding with the plurality of dynamic feedback control signals; and send an output power signal to the heater to control the heating for the MBE deposition process based on a combination of the plurality of control modes. In one embodiment, the plurality of dynamic feedback control signals comprises thermocouple signals and pyrometer signals.

Abstract: In certain desirable embodiments, the present invention relates to the use of 15N isotopes into GaAsN, InAsN or GaSbN films for ion beam analysis. A semiconductor-nitride assembly for growing and analyzing crystal growth in a group III-V semiconductor sample that includes: a substrate; a buffer layer deposited on the substrate, a nitrogen gas injector to incorporate enriched nitrogen gas and the nitrogen gas injector includes a concentration of enriched nitrogen gas, a thin film consisting of at least one group III element containing compound where at least one group III element is covalently bonded with the nitrogen in the presence of the same or different group V element of the buffer layer, and a proton beam to analyze the incorporation of the nitrogen gas in the thin film layer is described.

Abstract: A control system and method for controlling temperatures while performing a MBE deposition process, wherein the control system comprises a MBE growth structure; a heater adapted to provide heat for the MBE deposition process on the MBE growth structure; and a control computer adapted to receive a plurality of dynamic feedback control signals derived from the MBE growth structure; switch among a plurality of control modes corresponding with the plurality of dynamic feedback control signals; and send an output power signal to the heater to control the heating for the MBE deposition process based on a combination of the plurality of control modes. In one embodiment, the plurality of dynamic feedback control signals comprises thermocouple signals and pyrometer signals.

Abstract: An improved molecular beam epitaxy (MBE) system and method in which an interface and a processing component associated with the MBE system enables an operator to set up the molecular beam epitaxy system such that it will produce beam fluxes of the correct magnitude and with a high degree of precision in response to inputted growth criteria. In standard operation mode, after user input of desired growth parameters, a command file is started via interaction through the interface.