Abstract: A method of supplying and controlling the flow of a process gas to a process chamber. The method includes initiating a known flow rate of a process gas to a process chamber, dividing the known flow rate of the process gas into a first flow of the process gas at a first flow rate and a second flow of the process gas at a second flow rate, measuring a first pressure associated with the first flow of the process gas, measuring a second pressure associated with the second flow of the process gas, and controlling the first flow rate and the second flow rate according to a target flow condition by adjusting a first conductance of the first flow of the process gas and a second conductance of the second flow of the process gas and monitoring the first pressure and the second pressure.

Abstract: A method of supplying and controlling the flow of a process gas to a process chamber. The method includes initiating a known flow rate of a process gas to a process chamber, dividing the known flow rate of the process gas into a first flow of the process gas at a first flow rate and a second flow of the process gas at a second flow rate, measuring a first pressure associated with the first flow of the process gas, measuring a second pressure associated with the second flow of the process gas, and controlling the first flow rate and the second flow rate according to a target flow condition by adjusting a first conductance of the first flow of the process gas and a second conductance of the second flow of the process gas and monitoring the first pressure and the second pressure.

Abstract: A method for adjusting the lateral critical dimension (i.e., length and width) of a feature formed in a layer on a substrate using a dry etching process. One or more thin intermediate sub-layers are inserted in the layer within which the feature is to be formed. Once an intermediate sub-layer is reached during the etching process, an etch process is performed to correct and/or adjust the lateral critical dimensions before etching through the intermediate sub-layer and continuing the layer etch.

Abstract: A multizone gas distribution system configured to be coupled to a process chamber is described. The multizone gas distribution system comprises a first gas distribution element and a second gas distribution element. Additionally, the multizone gas distribution system comprises a flow control system configured to divide a flow of process gas between the first gas distribution element and the second gas distribution element. Further, a system controller coupled to the flow control system is configured to adjust the flow of process gas to the first gas distribution element and the second gas distribution element according to a target flow condition. Further yet, the system controller is configured to monitor the flow control system in order to perform at least one of monitoring a flow rate, adjusting a flow rate, controlling a flow rate, determining a fault condition, and determining an erroneous fault condition.

Abstract: A method for adjusting the lateral critical dimension (i.e., length and width) of a feature formed in a layer on a substrate using a dry etching process. One or more thin intermediate sub-layers are inserted in the layer within which the feature is to be formed. Once an intermediate sub-layer is reached during the etching process, an etch process is performed to correct and/or adjust the lateral critical dimensions before etching through the intermediate sub-layer and continuing the layer etch.