Patents by Inventor Stefan Senz

Stefan Senz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11258121
    Abstract: A metal/air button cell includes a cell cup having at least one inlet opening via which atmospheric oxygen can enter the interior, the cell cup has an inner side facing the interior, and an oppositely directed outer side, an air cathode is in the form of a cathode disk with a circumferential cathode disk periphery, the air cathode includes a metal collector structure, the cathode disk is arranged such that the cathode disk periphery bears along a circumferential contact zone against the inner side of a cladding region, the cell cup has, on its outer side, at least one recess made by impression and becomes visible as a raised portion on the inner side, and the at least one recess is made in the outer side such that the raised portion exerts a pressure against the cathode disk periphery in the region of the contact zone.
    Type: Grant
    Filed: June 12, 2018
    Date of Patent: February 22, 2022
    Assignee: VARTA Microbattery GmbH
    Inventors: Cornelia Wiedemann, Wolfgang Thorwart, Stefan Senz, Stephan Frosch, Berthold Bühler
  • Publication number: 20210119284
    Abstract: A metal/air button cell includes a cell cup having at least one inlet opening via which atmospheric oxygen can enter the interior, the cell cup has an inner side facing the interior, and an oppositely directed outer side, an air cathode is in the form of a cathode disk with a circumferential cathode disk periphery, the air cathode includes a metal collector structure, the cathode disk is arranged such that the cathode disk periphery bears along a circumferential contact zone against the inner side of a cladding region, the cell cup has, on its outer side, at least one recess made by impression and becomes visible as a raised portion on the inner side, and the at least one recess is made in the outer side such that the raised portion exerts a pressure against the cathode disk periphery in the region of the contact zone.
    Type: Application
    Filed: June 12, 2018
    Publication date: April 22, 2021
    Inventors: Cornelia Wiedemann, Wolfgang Thorwart, Stefan Senz, Stephan Frosch, Berthold Bühler
  • Publication number: 20120070739
    Abstract: A galvanic element includes a mercury-free negative electrode which consists essentially of a metal or a metal alloy and a nonmetallic conductive agent. A method for producing a galvanic element includes a mercury-free negative electrode produced from a powder of metal or metal alloy particles, surfaces of which are at least partially coated with a nonmetallic conductive agent.
    Type: Application
    Filed: May 17, 2010
    Publication date: March 22, 2012
    Applicant: VARTA MICROBATTERY GMBH
    Inventors: Kemal Akca, Thomas Haake, Stefan Senz, Hermann Löffelmann, Eduard Pytlik, Volker Stuber
  • Patent number: 6870970
    Abstract: The present invention provides a method for fast switching of optical properties in photonic crystals using pulsed/modulated free-carrier injection. The results disclosed herein indicate that several types of photonic crystal devices can be designed in which free carriers are used to vary dispersion curves, stop gaps in materials with photonic bandgaps to vary the bandgaps, reflection, transmission, absorption, gain, or phase. The use of pulsed free carrier injection to control the properties of photonic crystals on fast timescales forms the basis for all-optical switching using photonic crystals. Ultrafast switching of the band edge of a two-dimensional silicon photonic crystal is demonstrated near a wavelength of 1.9 ?m. Changes in the refractive index are optically induced by injecting free carriers with 800 nm, 300 fs pulses. Band-edge shifts have been induced in silicon photonic crystals of up to 29 nm that occurs on the time-scale of the pump pulse.
    Type: Grant
    Filed: April 24, 2002
    Date of Patent: March 22, 2005
    Inventors: Stephen W. Leonard, Henry M. van Driel, Jorg Schilling, Ralf Boris Wehrspohn, Ulrich Gosele, Stefan Senz
  • Publication number: 20030202728
    Abstract: The present invention provides a method for fast switching of optical properties in photonic crystals using pulsed/modulated free-carrier injection. The results disclosed herein indicate that several types of photonic crystal devices can be designed in which free carriers are used to vary dispersion curves, stop gaps in materials with photonic bandgaps to vary the bandgaps, reflection, transmission, absorption, gain, or phase. The use of pulsed free carrier injection to control the properties of photonic crystals on fast timescales forms the basis for all-optical switching using photonic crystals. Ultrafast switching of the band edge of a two-dimensional silicon photonic crystal is demonstrated near a wavelength of 1.9 &mgr;m. Changes in the refractive index are optically induced by injecting free carriers with 800 nm, 300 fs pulses. Band-edge shifts have been induced in silicon photonic crystals of up to 29 nm that occurs on the time-scale of the pump pulse.
    Type: Application
    Filed: April 24, 2002
    Publication date: October 30, 2003
    Inventors: Stephen W. Leonard, Henry M. van Driel, Jorg Schilling, Ralf Boris Wehrspohn, Ulrich Gosele, Stefan Senz