Abstract: A semiconductor layer and a method and an apparatus for its manufacturing are disclosed. The semiconductor layer includes at least one compound of the formula M1aM21-aN, where M1 is selected from group 13 of the periodic table and M2 is selected from the group comprising scandium, yttrium, erbium, and europium and where the parameter a is selected between 0.01 and 0.99. The method includes supplying a first precursor into a reaction chamber, the first precursor including at least M2 and being supplied to the reaction chamber at a molar flow rate of at least 1·10?6 mol/min by providing the first precursor by means of a first bubbler from which it is evaporated and supplied to the reaction chamber, the temperature of the first bubbler being more than 90° C.

Abstract: A semiconductor layer and a method and an apparatus for its manufacturing are disclosed. The semiconductor layer includes at least one compound of the formula M1aM21-aN, where M1 is selected from group 13 of the periodic table and M2 is selected from the group comprising scandium, yttrium, erbium, and europium and where the parameter a is selected between 0.01 and 0.99. The method includes supplying a first precursor into a reaction chamber, the first precursor including at least M2 and being supplied to the reaction chamber at a molar flow rate of at least 1·10?6 mol/min by providing the first precursor by means of a first bubbler from which it is evaporated and supplied to the reaction chamber, the temperature of the first bubbler being more than 90° C.

Abstract: The present invention relates to a process for cleaning the reaction chamber (12) of a CVD reactor, comprising the steps of heating the chamber walls to a suitable temperature and introducing a gas flow into the chamber, this cleaning process may be advantageously used within an operating process of a CVD reactor for depositing semiconductor material onto substrates inside a chamber; this operating process envisages a growth process comprising the sequential and cyclical loading of the substrates into the chamber (12), deposition of semiconductor material onto the substrates and unloading of the substrates from the chamber (12); after unloading a process for cleaning the chamber (12) is performed. The invention also relates to process for cleaning the entire CVD reactor, which envisages, together with heating, the presence of chemical etching components in the gas flow.