Patents by Inventor Stella Loverso
Stella Loverso has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220199846Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.Type: ApplicationFiled: February 3, 2022Publication date: June 23, 2022Inventors: Cosimo Gerardi, Cristina Tringali, Sebastiano Ravesi, Marina Foti, NoemiGraziana Sparta', Corrado Accardi, Stella Loverso
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Patent number: 11257975Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.Type: GrantFiled: October 23, 2018Date of Patent: February 22, 2022Assignee: STMICROELECTRONICS S.R.L.Inventors: Cosimo Gerardi, Cristina Tringali, Sebastiano Ravesi, Marina Foti, NoemiGraziana Sparta', Corrado Accardi, Stella Loverso
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Patent number: 10910510Abstract: The disclosure relates to an encapsulated flexible electronic device comprising a flexible electronic device, wherein the flexible electronic device is protected by a protective coating layer, a first cover sheet and a second cover sheet being made of patterned and developed dry photoresist films. The encapsulated flexible electronic device may be used to directly realize different type of electronic devices, such as smart sensor devices.Type: GrantFiled: December 30, 2015Date of Patent: February 2, 2021Assignee: STMICROELECTRONICS S.r.l.Inventors: Corrado Accardi, Stella Loverso, Sebastiano Ravesi, Noemi Graziana Sparta
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Publication number: 20190097074Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.Type: ApplicationFiled: October 23, 2018Publication date: March 28, 2019Inventors: Cosimo Gerardi, Cristina Tringali, Sebastiano Ravesi, Marina Foti, NoemiGraziana Sparta', Corrado Accardi, Stella Loverso
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Patent number: 10128396Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.Type: GrantFiled: October 16, 2013Date of Patent: November 13, 2018Assignee: STMICROELECTRONICS S.R.L.Inventors: Cosimo Gerardi, Cristina Tringali, Sebastiano Ravesi, Marina Foti, NoemiGraziana Sparta′, Corrado Accardi, Stella Loverso
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Patent number: 10103281Abstract: A thin film amorphous silicon solar cell may have front contact between a hydrogenated amorphous silicon layer and a transparent conductive oxide layer. The cell may include a layer of a refractory metal, chosen among the group composed of molybdenum, tungsten, tantalum and titanium, of thickness adapted to ensure a light transmittance of at least 80%, interposed therebetween, before growing by PECVD a hydrogenated amorphous silicon p-i-n light absorption layer over it. A refractory metal layer of just about 1 nm thickness may effectively shield the oxide from the reactive plasma, thereby preventing a diffused defect when forming the p.i.n. layer that would favor recombination of light-generated charge carriers.Type: GrantFiled: August 29, 2012Date of Patent: October 16, 2018Assignee: STMICROELECTRONICS S.R.L.Inventors: Salvatore Lombardo, Cosimo Gerardi, Sebastiano Ravesi, Marina Foti, Cristina Tringali, Stella Loverso, Nicola Costa
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Patent number: 9797860Abstract: A manufacturing method of an electrochemical sensor comprises forming a graphene layer on a donor substrate, laminating a film of dry photoresist on the graphene layer, removing the donor substrate to obtain an intermediate structure comprising the film of dry photoresist and the graphene layer, and laminating the intermediate structure onto a final substrate with the graphene layer in electrical contact with first and second electrodes positioned on the final substrate. The film of dry photoresist is then patterned to form a microfluidic structure on the graphene layer and an additional dry photoresist layer is laminated over the structure. In one type of sensor manufactured by this process, the graphene layer acts as a channel region of a field-effect transistor, whose conductive properties vary according to characteristics of an analyte introduced into the microfluidic structure.Type: GrantFiled: December 31, 2015Date of Patent: October 24, 2017Assignee: STMICROELECTRONICS S.R.L.Inventors: Corrado Accardi, Stella Loverso, Sebastiano Ravesi, Noemi Graziana Sparta
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Patent number: 9476852Abstract: A manufacturing method of an electrochemical sensor comprises forming a graphene layer on a donor substrate, laminating a film of dry photoresist on the graphene layer, removing the donor substrate to obtain an intermediate structure comprising the film of dry photoresist and the graphene layer, and laminating the intermediate structure onto a final substrate with the graphene layer in electrical contact with first and second electrodes positioned on the final substrate. The film of dry photoresist is then patterned to form a microfluidic structure on the graphene layer and an additional dry photoresist layer is laminated over the structure. In one type of sensor manufactured by this process, the graphene layer acts as a channel region of a field-effect transistor, whose conductive properties vary according to characteristics of an analyte introduced into the microfluidic structure.Type: GrantFiled: December 31, 2015Date of Patent: October 25, 2016Assignee: STMICROELECTRONICS S.R.L.Inventors: Corrado Accardi, Stella Loverso, Sebastiano Ravesi, Noemi Graziana Sparta
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Patent number: 9331151Abstract: The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of providing the substrate having at least one hydrophilic surface, depositing on the hydrophilic surface a layer of a solvent selected in the group constituted by acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone and mixtures thereof and depositing on the solvent layer a graphene layer. It moreover regards an electronic device comprising the graphene/substrate structure obtained.Type: GrantFiled: June 30, 2015Date of Patent: May 3, 2016Assignee: STMicroelectronics S.r.l.Inventors: Sebastiano Ravesi, Corrado Accardi, Cristina Tringali, Noemi Graziana Sparta′, Stella Loverso, Filippo Giannazzo
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Publication number: 20160116431Abstract: A manufacturing method of an electrochemical sensor comprises forming a graphene layer on a donor substrate, laminating a film of dry photoresist on the graphene layer, removing the donor substrate to obtain an intermediate structure comprising the film of dry photoresist and the graphene layer, and laminating the intermediate structure onto a final substrate with the graphene layer in electrical contact with first and second electrodes positioned on the final substrate. The film of dry photoresist is then patterned to form a microfluidic structure on the graphene layer and an additional dry photoresist layer is laminated over the structure. In one type of sensor manufactured by this process, the graphene layer acts as a channel region of a field-effect transistor, whose conductive properties vary according to characteristics of an analyte introduced into the microfluidic structure.Type: ApplicationFiled: December 31, 2015Publication date: April 28, 2016Inventors: Corrado ACCARDI, Stella LOVERSO, Sebastiano RAVESI, Noemi Graziana SPARTA
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Publication number: 20160116432Abstract: A manufacturing method of an electrochemical sensor comprises forming a graphene layer on a donor substrate, laminating a film of dry photoresist on the graphene layer, removing the donor substrate to obtain an intermediate structure comprising the film of dry photoresist and the graphene layer, and laminating the intermediate structure onto a final substrate with the graphene layer in electrical contact with first and second electrodes positioned on the final substrate. The film of dry photoresist is then patterned to form a microfluidic structure on the graphene layer and an additional dry photoresist layer is laminated over the structure. In one type of sensor manufactured by this process, the graphene layer acts as a channel region of a field-effect transistor, whose conductive properties vary according to characteristics of an analyte introduced into the microfluidic structure.Type: ApplicationFiled: December 31, 2015Publication date: April 28, 2016Inventors: Corrado ACCARDI, Stella LOVERSO, Sebastiano RAVESI, Noemi Graziana SPARTA
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Patent number: 9324825Abstract: A manufacturing method of an electrochemical sensor comprises forming a graphene layer on a donor substrate, laminating a film of dry photoresist on the graphene layer, removing the donor substrate to obtain an intermediate structure comprising the film of dry photoresist and the graphene layer, and laminating the intermediate structure onto a final substrate with the graphene layer in electrical contact with first and second electrodes positioned on the final substrate. The film of dry photoresist is then patterned to form a microfluidic structure on the graphene layer and an additional dry photoresist layer is laminated over the structure. In one type of sensor manufactured by this process, the graphene layer acts as a channel region of a field-effect transistor, whose conductive properties vary according to characteristics of an analyte introduced into the microfluidic structure.Type: GrantFiled: June 13, 2013Date of Patent: April 26, 2016Assignee: STMICROELECTRONICS S.R.L.Inventors: Corrado Accardi, Stella Loverso, Sebastiano Ravesi, Noemi Graziana Sparta
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Publication number: 20160111588Abstract: The disclosure relates to an encapsulated flexible electronic device comprising a flexible electronic device, wherein the flexible electronic device is protected by a protective coating layer, a first cover sheet and a second cover sheet being made of patterned and developed dry photoresist films. The encapsulated flexible electronic device may be used to directly realize different type of electronic devices, such as smart sensor devices.Type: ApplicationFiled: December 30, 2015Publication date: April 21, 2016Inventors: Corrado ACCARDI, Stella LOVERSO, Sebastiano RAVESI, Noemi Graziana SPARTA
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Publication number: 20160079453Abstract: A thin film amorphous silicon solar cell may have front contact between a hydrogenated amorphous silicon layer and a transparent conductive oxide layer. The cell may include a layer of a refractory metal, chosen among the group composed of molybdenum, tungsten, tantalum and titanium, of thickness adapted to ensure a light transmittance of at least 80%, interposed therebetween, before growing by PECVD a hydrogenated amorphous silicon p-i-n light absorption layer over it. A refractory metal layer of just about 1 nm thickness may effectively shield the oxide from the reactive plasma, thereby preventing a diffused defect when forming the p.i.n. layer that would favor recombination of light-generated charge carriers.Type: ApplicationFiled: November 23, 2015Publication date: March 17, 2016Inventors: SALVATORE LOMBARDO, COSIMO GERARDI, SEBASTIANO RAVESI, MARINA FOTI, CRISTINA TRINGALI, STELLA LOVERSO, NICOLA COSTA
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Publication number: 20150303264Abstract: The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of providing the substrate having at least one hydrophilic surface, depositing on the hydrophilic surface a layer of a solvent selected in the group constituted by acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone and mixtures thereof and depositing on the solvent layer a graphene layer. It moreover regards an electronic device comprising the graphene/substrate structure obtained.Type: ApplicationFiled: June 30, 2015Publication date: October 22, 2015Inventors: Sebastiano Ravesi, Corrado Accardi, Cristina Tringali, Noemi Graziana Sparta', Stella Loverso, Filippo Giannazzo
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Patent number: 9099305Abstract: The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of providing the substrate having at least one hydrophilic surface, depositing on the hydrophilic surface a layer of a solvent selected in the group constituted by acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone and mixtures thereof and depositing on the solvent layer a graphene layer. It moreover regards an electronic device comprising the graphene/substrate structure obtained.Type: GrantFiled: April 29, 2014Date of Patent: August 4, 2015Assignee: STMicroelectronics S.r.l.Inventors: Noemi Graziana Sparta', Cristina Tringali, Stella Loverso, Sebastiano Ravesi, Corrado Accardi, Filippo Giannazzo
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Patent number: 9091932Abstract: The disclosure relates to a three-dimensional integrated structure comprising a substrate and a plurality of projecting elements projecting from a flat surface thereof and obtained from a patterned and developed dry film photoresist. Advantageously, the three-dimensional integrated structure is highly defined, the projecting elements obtained by the patterned and developed dry film photoresist having a shape factor greater than 6. The three-dimensional integrated structure can be used to directly realize different type of electronic devices, such as microfluidic devices, microreactors or sensor devices.Type: GrantFiled: September 5, 2012Date of Patent: July 28, 2015Assignee: STMicroelectronics S.r.l.Inventors: Corrado Accardi, Stella Loverso, Sebastiano Ravesi, Noemi Graziana Sparta
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Patent number: 9087692Abstract: A method transfers a graphene layer from a donor substrate onto a final substrate. The method includes: providing a metal layer on the donor substrate; and growing a graphene layer on the metal layer. The method also includes: laminating a dry film photo-resist on the graphene layer; laminating a tape on the dry film photo-resist; chemically. etching the metal layer, obtaining an initial structure that includes the tape, the dry film photo-resist and the graphene layer; laminating the initial structure on the final substrate; thermally realizing the tape, so as to obtain an intermediate structure that includes the dry film photo-resist, the graphene layer and the final substrate; removing the dry film photo-resist; and obtaining a final structure that includes the final substrate with a transferred graphene layer.Type: GrantFiled: February 8, 2013Date of Patent: July 21, 2015Assignee: STMicroelectronics S.r.l.Inventors: Corrado Accardi, Stella Loverso, Sebastiano Ravesi, Noemi Graziana Sparta
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Publication number: 20140319655Abstract: The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of providing the substrate having at least one hydrophilic surface, depositing on the hydrophilic surface a layer of a solvent selected in the group constituted by acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone and mixtures thereof and depositing on the solvent layer a graphene layer. It moreover regards an electronic device comprising the graphene/substrate structure obtained.Type: ApplicationFiled: April 29, 2014Publication date: October 30, 2014Applicant: STMicroelectronics S.r.l.Inventors: Noemi Graziana Sparta', Cristina Tringali, Stella Loverso, Sebastiano Ravesi, Corrado Accardi, Filippo Giannazzo
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Publication number: 20140116501Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.Type: ApplicationFiled: October 16, 2013Publication date: May 1, 2014Applicant: STMICROELECTRONICS S.r.I.Inventors: Cosimo GERARDI, Cristina TRINGALI, Sebastiano RAVESI, Marina FOTI, NoemiGraziana SPARTA', Corrado ACCARDI, Stella LOVERSO