Abstract: Cleaning vehicle sensors, wherein position data of a vehicle are received (1). An unmanned aircraft suitable for cleaning vehicle sensors flies to the vehicle on the basis of the received position data of the vehicle, positions itself, on the basis of location data of a sensor of the vehicle that is to be cleaned, near the vehicle in such a way that the sensor to be cleaned can be cleaned, and cleans the sensor. The vehicle can transmit the position data of the vehicle to a Service Station via a mobile data connection, wherein the Service Station causes the unmanned aircraft to fly to the vehicle and, after the end of the cleaning operation, to return to the Service Station.

Abstract: A method includes producing a semiconductor wafer. The semiconductor wafer includes a plurality of microelectromechanical system (MEMS) semiconductor chips, wherein the MEMS semiconductor chips have MEMS structures arranged at a first main surface of the semiconductor wafer, a first semiconductor material layer arranged at the first main surface, and a second semiconductor material layer arranged under the first semiconductor material layer, wherein a doping of the first semiconductor material layer is greater than a doping of the second semiconductor material layer. The method further includes removing the first semiconductor material layer in a region between adjacent MEMS semiconductor chips. The method further includes applying a stealth dicing process from the first main surface of the semiconductor wafer and between the adjacent MEMS semiconductor chips.

Abstract: A method includes producing a semiconductor wafer. The semiconductor wafer includes a plurality of microelectromechanical system (MEMS) semiconductor chips, wherein the MEMS semiconductor chips have MEMS structures arranged at a first main surface of the semiconductor wafer, a first semiconductor material layer arranged at the first main surface, and a second semiconductor material layer arranged under the first semiconductor material layer, wherein a doping of the first semiconductor material layer is greater than a doping of the second semiconductor material layer. The method further includes removing the first semiconductor material layer in a region between adjacent MEMS semiconductor chips. The method further includes applying a stealth dicing process from the first main surface of the semiconductor wafer and between the adjacent MEMS semiconductor chips.