Abstract: Electroacoustic devices with a capacitive element and methods for fabricating such electroacoustic devices. An example method includes forming an acoustic device above a first region of a substrate, and forming a capacitive element above a second region of the substrate and adjacent to the acoustic device. The forming of the capacitive element may include forming a protective layer above the substrate where a first portion of the protective layer is above the second region of the substrate and a second portion of the protective layer is above the first region of the substrate, forming a dielectric region above the protective layer, and forming an electrode above the dielectric region. The dielectric region may include a different material than the protective layer.

Abstract: The present invention relates to a layer system (1) for thin-film solar cells (100) and solar modules, comprising an absorber layer (4), which includes a chalcogenide compound semiconductor, and a buffer layer (5), which is arranged on the absorber layer (4) and includes halogen-enriched ZnxIn1-xSy with 0.01?x?0.9 and 1?y?2, wherein the buffer layer (5) consists of a first layer region (5.1) adjoining the absorber layer (4) with a halogen mole fraction A1 and a second layer region (5.2) adjoining the first layer region (5.1) with a halogen mole fraction A2 and the ratio A1/A2 is ?2 and the layer thickness (d1) of the first layer region (5.1) is ?50% of the layer thickness (d) of the buffer layer (5).

Abstract: The present invention relates to a layer system (1) for thin-film solar cells with an absorber layer (4) that contains a chalcogenide compound semiconductor and a buffer layer (5) that is arranged on the absorber layer (4), wherein the buffer layer (5) contains NaxIn1SyClz with 0.05?x<0.2 or 0.2<x?0.5, 1?y?2, and 0.6?x/z ?1.4.

Abstract: A method for producing a layer system for thin-film solar cells is described, wherein a) an absorber layer is produced, and b) a buffer layer is produced on the absorber layer, wherein the buffer layer contains sodium indium sulfide according to the formula NaxIny-x/3S with 0.063?x?0.625 and 0.681?y?1.50, and wherein the buffer layer is produced, without deposition of indium sulfide, based on at least one sodium thioindate compound.

Abstract: A layer system (1) for thin-film solar cells (100), comprising an absorber layer (4), which contains a chalcogenide compound semiconductor, and a buffer layer (5), which is arranged on the absorber layer (4), wherein the buffer layer (5) has a semiconductor material of the formula AxInySz, where A is potassium (K) and/or cesium (Cs), with 0.015?x/(x+y+z)?0.25 and 0.30?y/(y+z)?0.45.

Abstract: The present invention relates to a layer system (1) for thin-film solar cells (100) and solar modules, comprising an absorber layer (4), which includes a chalcogenide compound semiconductor, and a buffer layer (5), which is arranged on the absorber layer (4) and includes halogen-enriched ZnxIn1-xSy with 0.01?x?0.9 and 1?y?2, wherein the buffer layer (5) consists of a first layer region (5.1) adjoining the absorber layer (4) with a halogen mole fraction A1 and a second layer region (5.2) adjoining the first layer region (5.1) with a halogen mole fraction A2 and the ratio A1/A2 is ?2 and the layer thickness (d1) of the first layer region (5.1) is ?50% of the layer thickness (d) of the buffer layer (5).

Abstract: The invention concerns a layer system for thin-layer solar cells, said layer system comprising an absorber layer for absorbing light and a buffer layer on the absorber layer, said buffer layer containing NaxIny-x/3S, in which 0.063?x?0.625 and 0.681?y?1.50.

Abstract: The invention relates to a device for depositing a layer made of at least two components on an object, with a deposition chamber for disposing the object, at least one source with material to be deposited, as well as at least one device for controlling the deposition process, implemented such that the concentration of at least one component of the material to be deposited can be modified in its gas phase prior to deposition on the substrate by selective binding of a specified quantity of the at least one component, wherein the selectively bound quantity of the at least one component can be controlled by modifying at least one control parameter that is actively coupled to a binding rate or the component. It further relates to a device for depositing a layer made of at least two components on an object, wherein a device for controlling the deposition process has at least one gettering element made of a reactive material, wherein the reactive material includes copper and/or molybdenum.

Abstract: The present invention relates to a layer system (1) for thin-film solar cells (100) and solar modules, comprising an absorber layer (4) that includes a chalcogenide compound semiconductor and a buffer layer (5) that is arranged on the absorber layer (4) and includes halogen-enriched InxSy with ??x/y?1, wherein the buffer layer (5) consists of a first layer region (5.1) adjoining the absorber layer (4) with a halogen mole fraction A1 and a second layer region (5.2) adjoining the first layer region (5.1) with a halogen mole fraction A2 and the ratio A1/A2 is ?2 and the layer thickness (d1) of the first layer region (5.1) is ?50% of the layer thickness (d) of the buffer layer (5).

Abstract: The present invention relates to a layer system (1) for thin-film solar cells with an absorber layer (4) that contains a chalcogenide compound semiconductor and a buffer layer (5) that is arranged on the absorber layer (4), wherein the buffer layer (5) contains NaxIn1SyClz with 0.05?x?0.2 or 0.2<x?0.5, 1?y?2, and 0.6?x/z?1.4.

Abstract: The invention relates to a device for depositing a layer made of at least two components on an object, with a deposition chamber for disposing the object, at least one source with material to be deposited, as well as at least one device for controlling the deposition process, implemented such that the concentration of at least one component of the material to be deposited can be modified in its gas phase prior to deposition on the substrate by selective binding of a specified quantity of the at least one component, wherein the selectively bound quantity of the at least one component can be controlled by modifying at least one control parameter that is actively coupled to a binding rate or the component. It further relates to a device for depositing a layer made of at least two components on an object, wherein a device for controlling the deposition process has at least one gettering element made of a reactive material, wherein the reactive material includes copper and/or molybdenum.

Abstract: A device for depositing a layer containing at least two components on an object, including: a deposition chamber; a source containing a material to be deposited; and a control device, which controls the deposition process, implemented such that a concentration of the component of the material can be modified in its gas phase prior to deposition on the object by selective binding a specified quantity of the component, wherein the selectively bound quantity of the component is controlled by modifying a control parameter that is actively coupled to a binding rate or the component, and wherein the control device contains a gettering element containing a reactive material containing copper and/or molybdenum. Also, a method for depositing a layer containing at least two components on an object, wherein a selectively bound quantity of a component is controlled by modifying a binding rate of the component of the control device.