Abstract: A method for producing an optoelectronic thin-film chip semiconductor device is specified. A conductor structure is applied on a carrier and a multiplicity of optoelectronic semiconductor chips are arranged between the conductor structures. Each of the optoelectronic semiconductor chips includes a layer at a top side. Furthermore, electrical connections between semiconductor chip and the conductor structure are established, for instance using a bonding wire. The semiconductor chips and the conductor structure are surrounded with a molded body. The molded body does not project beyond the optoelectronic semiconductor chips at the top side thereof facing away from the carrier. Moreover, the carrier is removed and the semiconductor chips surrounded by molding are singulated.

Abstract: An optoelectronic component comprising an optoelectronic semiconductor chip (104) having a contact side (106) and a radiation coupling-out side (108) situated opposite; a chip carrier (102), on which the semiconductor chip (104) is applied via its contact side (106); a radiation conversion element (110) applied on the radiation coupling-out side (108); and a reflective potting compound (112), which is applied on the chip carrier (102) and laterally encloses the semiconductor chip (104) and the radiation conversion element (110); wherein the potting compound (112) adjoins an upper edge of the radiation conversion element (110) in a substantially flush fashion, such that a top side of the radiation conversion element (110) is free of the potting compound (112).

Abstract: A method of producing an optoelectronic component includes providing a cavity; introducing a liquid matrix material with phosphor particles distributed therein into the cavity; introducing a semiconductor chip into the matrix material; sedimenting the phosphor particles in the matrix material; and curing the matrix material, wherein a conversion layer including phosphor particles is produced, said conversion layer being arranged on the semiconductor chip.

Abstract: A method for producing an optoelectronic thin-film chip semiconductor device is specified. A conductor structure is applied on a carrier and a multiplicity of optoelectronic semiconductor chips are arranged between the conductor structures. Each of the optoelectronic semiconductor chips includes a layer at a top side. Furthermore, electrical connections between semiconductor chip and the conductor structure are established, for instance using a bonding wire. The semiconductor chips and the conductor structure are surrounded with a molded body. The molded body does not project beyond the optoelectronic semiconductor chips at the top side thereof facing away from the carrier. Moreover, the carrier is removed and the semiconductor chips surrounded by molding are singulated.

Abstract: The fabric structure of a belt intended for use as a vehicle safety belt is characterized by warp (1) and weft (3) threads, wherein the warp threads (1) extend in the lengthwise direction of the belt (2) and the weft threads (3) extend in the transverse direction thereto, wherein in the load-free state the warp threads (1) are looped around the weft threads (3) which extend in a straight line and wherein at least in a lengthwise section of the belt the weft threads (3) are formed in such a manner that they can extend in length in comparison to the warp threads (1).

Abstract: An optoelectronic semi-conductor component includes a first carrier having a top side and an underside laying opposite the top side of the first carrier, wherein the first carrier has a first and a second region; at least one optoelectronic semiconductor chip arranged at the top side on the first carrier; and at least one electronic component arranged in the second region at the underside of the first carrier, wherein the first region has a greater thickness in a vertical direction than the second region, wherein, at the underside, the first region projects beyond the second region in a vertical direction, and the at least one electronic component is electrically conductively connected to the at least one optoelectronic semi-conductor chip.

Abstract: The fabric structure of a belt intended for use as a vehicle safety belt is characterised by warp (1) and weft (3) threads, wherein the warp threads (1) extend in the lengthwise direction of the belt (2) and the weft threads (3) extend in the transverse direction thereto, wherein in the load-free state the warp threads (1) are looped around the weft threads (3) which extend in a straight line and wherein at least in a lengthwise section of the belt the weft threads (3) are formed in such a manner that they can extend in length in comparison to the warp threads (1).