Patents by Inventor Stephane Cros

Stephane Cros has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240016052
    Abstract: Tandem photovoltaic device combining a silicon-based sub-cell and a perovskite-based sub-cell including an N-layer with a controlled carbon content. A tandem photovoltaic device, comprising, in this superimposition order: A/ a silicon-based sub-cell A, in particular a silicon heterojunction sub-cell or a TOPCon architecture sub-cell; and B/ a perovskite-based sub-cell B, comprising at least: —an N-type conductive or semiconductor layer (ETL); —a P-type conductive or semiconductor layer (HTL); and —a perovskite-type active layer, interposed between said N-type and P-type conductive or semiconductor layers, wherein the N-type conductive or semiconductor layer is based on individualised nanoparticles of N-type metal oxide(s), and has an atomic carbon content lower than or equal to 20%.
    Type: Application
    Filed: October 25, 2021
    Publication date: January 11, 2024
    Inventors: Matthieu Manceau, Stéphane Cros, Pia Dally, Olivier Dupre, Noella Lemaitre
  • Publication number: 20230345805
    Abstract: A method for manufacturing a multi-cation perovskite layer, including: a) supply of a substrate having a deposition face, b) deposition of a precursor solution including precursors comprising CsX, FAY, PbZ2, with X, Y and Z = I, Br, and an FAC1 additive, the molar ratio of cesium to lead is between approximately 4 % and 22%, the molar ratio of FAC1 relative to lead between 0.1% and 5%, and the perovskite layer has an empirical formula of the type CsxFA(1-x+w)Pb(IyBr(1-y))3 with x between 0.04 and 0.22, y between 0 and 1 and w between 0.001 and 0.05, c) sweeping of the wet film by an inert gas to crystallize the perovskite layer, and heat treatment so that the deposition face has a temperature ranging from about 25° C. to 80° C. C at least during step b).
    Type: Application
    Filed: April 21, 2023
    Publication date: October 26, 2023
    Applicant: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
    Inventors: Matthieu MANCEAU, Noëlla LEMAITRE, Stéphane CROS, Mathilde FIEVEZ
  • Publication number: 20230197870
    Abstract: A photovoltaic module including: several photovoltaic cells disposed side by side, and electrically connected to each other, an encapsulating assembly, configured to encapsulate the photovoltaic cells, and a barrier layer disposed at an interface between the encapsulating assembly and at least one photovoltaic cell, the barrier layer being configured to at least partially cover the at least one photovoltaic cell, and to have an O2 gas transmission rate lower than that of the encapsulating assembly, and a water vapor transmission rate less than or equal to 10-2 g/m2/day measured at 38° C. and 85% humidity level, so as to form a barrier to the transmission of water vapor and O2 gas.
    Type: Application
    Filed: December 21, 2022
    Publication date: June 22, 2023
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Virginie BRIZE, Stéphane CROS
  • Patent number: 10281304
    Abstract: Method for estimating a gas flow in an enclosure maintained in a low pressure regimen relative to the gas, including: measuring, as a function of time, a gas flow Jmeasurement in the enclosure, and estimating values of the parameters A and B iteratively implemented by decreasing an estimation error based on a difference between Jestim(t) and Jmeasurement, and wherein, when Jmeasurement corresponds to a pressure rise of the gas in the enclosure, Jestim(t) is calculated according to the equation: J estim ? ( t ) = 2 ? A ? ? n = 1 n ? ? ma ? ? x ? ( B ? ? ( t - OffX ) ) 1 2 ? exp ? ( - 2 ? ( n + 1 ) 2 4 ? B ? ( t - OffX ) ) + OffY and when Jmeasurement corresponds to a pressure decrease of the gas in the enclosure, Jestim(t) is calculated according to the equation: J estm ? ( t ) = P init - 2 ? A ? ? n = 1 n ? ? ma ? ? x ? ( B ? ? ( t - OffX ) ) 1 2 ? exp ? ( - ( 2 ? n + 1 ) 2
    Type: Grant
    Filed: November 6, 2013
    Date of Patent: May 7, 2019
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Arnaud Leroy, Stephane Cros
  • Patent number: 10168270
    Abstract: A cell for measuring the permeation of a target gas through a sample includes upstream and downstream chambers connected by an opening, a primary seal in contact with the bottom of the upstream chamber and surrounding the opening, and a removable sample holder and means for assembling the sample holder in the cell. Upper and lower frames included in the sample holder are each provided with a through opening. The sample holder includes means for assembling the sample in the sample holder and a first seal flush with the front surface of the lower frame, and surrounding the through opening of the lower frame. In the lower frame of the sample holder, a second seal is flush with the front surface of the lower frame, surrounding the through opening of the lower frame, and being surrounded with the first seal, and a second channel emerging between the two secondary seals.
    Type: Grant
    Filed: November 24, 2014
    Date of Patent: January 1, 2019
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Stéphane Cros, Jean-Philippe Fauvarque, Arnaud Leroy, Christine Walsh
  • Patent number: 10088406
    Abstract: The invention relates to a method for measuring permeation of gases through a material comprising the following steps: a) Supplying gas to a permeation enclosure (10) during which a first chamber (11) is supplied with a target gas flow comprising at least one target gas corresponding to a gas for which one tries to determine the permeation through the material (M), and simultaneous supplying gas to a measurement enclosure (20) with at least one calibrated flow comprising at least one reference gas different from the target gas; b) during the gas supply step, measuring in the measurement enclosure (20) the reference gas present at instant (t) and the target gas present at the same instant (t) after having crossed the material (M) by permeation; c) calculating a correction factor at instant (t) by comparing the measurement of the reference gas present at instant (t) with the reference gas supply calibrated flow; and d) determining the permeation of the material (M) to said gas, from the measurement of the ta
    Type: Grant
    Filed: November 23, 2015
    Date of Patent: October 2, 2018
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Stéphane Cros, Fabien Jaubert, Arnaud Leroy, Christine Walsh
  • Patent number: 9771654
    Abstract: A multilayer structure including a substrate and a first stack of a layer of SiO2 and a layer of material of the SiOxNyHz type positioned between the substrate and the layer of SiO2, in which the layer of SiO2 and the layer of material of the SiOxNyHz type have thicknesses (eB, eA) such that the thickness of the layer of SiO2 is less than or equal to 60 nm, the thickness of the layer of material of the SiOxNyHz type (eB) is more than twice the thickness (eA) of the layer of SiO2, and the sum of the thicknesses of the layer of SiO2 and of the layer of material of the SiOxNyHz type is between 100 nm and 500 nm, and in which z is strictly less than the ratio (x+y)/5, and advantageously z is strictly less than the ratio (x+y)/10.
    Type: Grant
    Filed: September 24, 2012
    Date of Patent: September 26, 2017
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Stephane Cros, Nicole Alberola, Jean-Paul Garandet, Arnaud Morlier
  • Publication number: 20170194567
    Abstract: An organic electronic device containing a stack successively including a polymer substrate covered with a first layer E1 made of conductive or semiconductor material; a hole transport layer HTL; an active layer A; and a second layer E2 made of conductive or semiconductor material. The HTL layer is a bilayer formed of a so-called neutral layer based on PEDOT:PSS and of a so-called acid layer based on PEDOT:PSS. The neutral layer is in contact with first layer E1 while the acid layer is in contact with active layer A.
    Type: Application
    Filed: May 29, 2015
    Publication date: July 6, 2017
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Solenn Berson, Stéphane Cros, Stéphane Guillerez, Noëlla Lemaitre
  • Publication number: 20160266024
    Abstract: A cell for measuring the permeation of a target gas through a sample includes upstream and downstream chambers connected by an opening, a primary seal in contact with the bottom of the upstream chamber and surrounding the opening, and a removable sample holder and means for assembling the sample holder in the cell. Upper and lower frames included in the sample holder are each provided with a through opening. The sample holder includes means for assembling the sample in the sample holder and a first seal flush with the front surface of the lower frame, and surrounding the through opening of the lower frame. In the lower frame of the sample holder, a second seal is flush with the front surface of the lower frame, surrounding the through opening of the lower frame, and being surrounded with the first seal, and a second channel emerging between the two secondary seals.
    Type: Application
    Filed: November 24, 2014
    Publication date: September 15, 2016
    Inventors: Stéphane Cros, Jean- Philippe Fauvarque, Arnaud Leroy, Christine Walsh
  • Publication number: 20160146716
    Abstract: The invention relates to a method for measuring permeation of gases through a material comprising the following steps: a) Supplying gas to a permeation enclosure (10) during which a first chamber (11) is supplied with a target gas flow comprising at least one target gas corresponding to a gas for which one tries to determine the permeation through the material (M), and simultaneous supplying gas to a measurement enclosure (20) with at least one calibrated flow comprising at least one reference gas different from the target gas; b) during the gas supply step, measuring in the measurement enclosure (20) the reference gas present at instant (t) and the target gas present at the same instant (t) after having crossed the material (M) by permeation; c) calculating a correction factor at instant (t) by comparing the measurement of the reference gas present at instant (t) with the reference gas supply calibrated flow; and d) determining the permeation of the material (M) to said gas, from the measurement of the ta
    Type: Application
    Filed: November 23, 2015
    Publication date: May 26, 2016
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Stéphane Cros, Fabien Jaubert, Arnaud Leroy, Christine Walsh
  • Publication number: 20150276443
    Abstract: Method for estimating a gas flow in an enclosure maintained in a low pressure regimen relative to the gas, including: measuring, as a function of time, a gas flow Jmeasurement in the enclosure, and estimating values of the parameters A and B iteratively implemented by decreasing an estimation error based on a difference between Jestim(t) and Jmeasurement, and wherein, when Jmeasurement corresponds to a pressure rise of the gas in the enclosure, Jestim(t) is calculated according to the equation: J estim ? ( t ) = 2 ? A ? ? n = 1 n ? ? ma ? ? x ? ( B ? ? ( t - OffX ) ) 1 2 ? exp ? ( - 2 ? ( n + 1 ) 2 4 ? B ? ( t - OffX ) ) + OffY and when Jmeasurement corresponds to a pressure decrease of the gas in the enclosure, Jestim(t) is calculated according to the equation: J estm ? ( t ) = P init - 2 ? A ? ? n = 1 n ? ? ma ? ? x ? ( B ? ? ( t - OffX ) ) 1 2 ? exp ? ( - ( 2 ? n + 1 ) 2
    Type: Application
    Filed: November 6, 2013
    Publication date: October 1, 2015
    Applicant: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Arnaud Leroy, Stephane Cros
  • Patent number: 8963345
    Abstract: An encapsulation device including two casings made of a flexible polymer material, each delimiting a sealed space, and at least one hydrophobic material filling each of the casings, the casings being stacked and sealingly interconnected at peripheral edges thereof, a sealed space then being defined between the two casings for receiving a device to be encapsulated.
    Type: Grant
    Filed: December 9, 2010
    Date of Patent: February 24, 2015
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Stephane Cros, Nicole Alberola, Jean-Paul Garandet, Arnaud Morlier
  • Publication number: 20150047694
    Abstract: The present invention relates to the use of a specific multilayer structure in the front and/or rear protective sheet of a photovoltaic module comprising photovoltaic cells covered with an encapsulant. This multilayer structure comprises a substrate enclosing at least one halogenated polymer and at least one stack of one layer (A) of SiO2 and one layer (B) of an SiOxNyHz material disposed between the substrate and the layer (A), said layers having given thicknesses. This stack is disposed on the face of the substrate turned towards the encapsulant and optionally on the opposing face of the substrate. It also relates to a photovoltaic module comprising the abovementioned multilayer structure in the front and/or rear protective sheet thereof.
    Type: Application
    Filed: March 22, 2013
    Publication date: February 19, 2015
    Applicants: ARKEMA FRANCE, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES AL TERNATIVES
    Inventors: Anthony Bonnet, Stephane Cros, Manuel Hidalgo
  • Publication number: 20140234602
    Abstract: A multilayer structure including a substrate and a first stack of a layer of SiO2 and a layer of material of the SiOxNyHz type positioned between the substrate and the layer of SiO2, in which the layer of SiO2 and the layer of material of the SiOxNyHz type have thicknesses (eB, eA) such that the thickness of the layer of SiO2 is less than or equal to 60 nm, the thickness of the layer of material of the SiOxNyHz type (eB) is more than twice the thickness (eA) of the layer of SiO2, and the sum of the thicknesses of the layer of SiO2 and of the layer of material of the SiOxNyHz type is between 100 nm and 500 nm, and in which z is strictly less than the ratio (x+y)/5, and advantageously z is strictly less than the ratio (x+y)/10.
    Type: Application
    Filed: September 24, 2012
    Publication date: August 21, 2014
    Applicant: Commissariat a l'energie atomique et aux ene alt
    Inventors: Stephane Cros, Nicole Alberola, Jean-Paul Garandet, Arnaud Morlier
  • Publication number: 20130001808
    Abstract: An encapsulation device including two casings made of a flexible polymer material, each delimiting a sealed space, and at least one hydrophobic material filling each of the casings, the casings being stacked and sealingly interconnected at peripheral edges thereof, a sealed space then being defined between the two casings for receiving a device to be encapsulated.
    Type: Application
    Filed: December 9, 2010
    Publication date: January 3, 2013
    Applicant: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Stephane Cros, Nicole Alberola, Jean-Paul Garandet, Arnaud Morlier
  • Patent number: 7624621
    Abstract: The invention relates to a method for measuring gases permeation through a material (M), comprising the steps of: Forming a mixture of isotopic gases in a mixing enclosure (14), each isotopic gas corresponding to a target gas for which permeation through the material (M) is sought, the isotopic gas having a mass number different from that of the corresponding target gas; Filling with the mixture of isotopic gases a first chamber (11) of a permeation enclosure (10) comprising first (11) and second (12) chambers, the first chamber (11) being separated from the second chamber (12) by the material (M); Simultaneously analyzing the isotopic gases having permeated through the material (M) and being present in the second chamber (12), in order to simultaneously calculate permeation through the material (M) of each of the corresponding target gases. The invention further relates to a device for implementing such a method, and a method for using this device.
    Type: Grant
    Filed: April 11, 2006
    Date of Patent: December 1, 2009
    Assignee: Commissariat A l'Energie Atomique
    Inventors: Muriel Firon, Stéphane Cros, Philippe Trouslard
  • Publication number: 20070186622
    Abstract: The invention relates to a method for measuring gases permeation through a material (M), comprising the steps of: Forming a mixture of isotopic gases in a mixing enclosure (14), each isotopic gas corresponding to a target gas for which permeation through the material (M) is sought, the isotopic gas having a mass number different from that of the corresponding target gas; Filling with the mixture of isotopic gases a first chamber (11) of a permeation: enclosure (10) comprising first (11) and second (12) chambers, the first chamber (11) being separated from the second chamber (12) by the material (M); Simultaneously analysing the isotopic gases having permeated through the material (M) and being present in the second chamber (12), in order to simultaneously calculate permeation through the material (M) of each of the corresponding target gases. The invention further relates to a device for implementing such a method, and a method for using this device.
    Type: Application
    Filed: April 11, 2006
    Publication date: August 16, 2007
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE
    Inventors: Muriel Firon, Stephane Cros, Philippe Trouslard