Abstract: A method of forming conductive paths and vias is disclosed. In one aspect, patterns of a hard mask layer are transferred into a dielectric layer by etching to form trenches. The trenches define locations for conductive paths of an upper metallization level. At least one trench is interrupted in a longitudinal direction by a block portion of the hard mask layer, the block portion defining the tip-to-tip location of a pair of the conductive paths to be formed. The trenches extend partially through the dielectric layer in regions exposed by the hard mask layer, thereby deepening first and the second holes to extend completely through the dielectric layer. After removing the hard mask layer, the deepened first and second holes and the trenches are filled with a conductive material to form the conductive paths in the trenches and to form the vias in the deepened first and second holes.

Abstract: A method of forming conductive paths and vias is disclosed. In one aspect, patterns of a hard mask layer are transferred into a dielectric layer by etching to form trenches. The trenches define locations for conductive paths of an upper metallization level. At least one trench is interrupted in a longitudinal direction by a block portion of the hard mask layer, the block portion defining the tip-to-tip location of a pair of the conductive paths to be formed. The trenches extend partially through the dielectric layer in regions exposed by the hard mask layer, thereby deepening first and the second holes to extend completely through the dielectric layer. After removing the hard mask layer, the deepened first and second holes and the trenches are filled with a conductive material to form the conductive paths in the trenches and to form the vias in the deepened first and second holes.