Patents by Inventor Stephen C. Currie

Stephen C. Currie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6817211
    Abstract: High purity direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive direct deposit vitrified silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a dry direct deposit vitrified silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.
    Type: Grant
    Filed: January 13, 2003
    Date of Patent: November 16, 2004
    Assignee: Corning Incorporated
    Inventors: John T. Brown, Stephen C. Currie, Lisa A. Moore, Susan L. Schiefelbein, Robert S. Pavlik, Jr.
  • Publication number: 20040118155
    Abstract: The present invention is directed to a method of making an ultra dry high purity, Cl-free, F doped fused silica glass. Silica powder or soot preforms are used to form a glass under conditions to provide a desired level of F doping while reducing the Cl and −OH concentrations to trace levels. The method includes providing a glass precursor in the from of a silica powder or soot preform. The powder is heated in a furnace. The powder is exposed to a F-species at a predetermined temperature and time sufficient to melt the powder and form a high purity fused silica glass in the bottom of said furnace.
    Type: Application
    Filed: December 20, 2002
    Publication date: June 24, 2004
    Inventors: John T. Brown, Stephen C. Currie, Susan L. Schiefelbein, Michael H. Wasilewski, HuaiLiang Wei
  • Publication number: 20030148194
    Abstract: High purity direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive direct deposit vitrified silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a dry direct deposit vitrified silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.
    Type: Application
    Filed: January 13, 2003
    Publication date: August 7, 2003
    Inventors: John T. Brown, Stephen C. Currie, Lisa A. Moore, Susan L. Schiefelbein, Robert S. Pavlik
  • Patent number: 6541168
    Abstract: High purity direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive direct deposit vitrified silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a dry direct deposit vitrified silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.
    Type: Grant
    Filed: April 24, 2001
    Date of Patent: April 1, 2003
    Assignee: Corning Incorporated
    Inventors: John T. Brown, Stephen C. Currie, Lisa A. Moore, Susan L. Schiefelbein, Robert S. Pavlik, Jr.
  • Publication number: 20020018942
    Abstract: High purity direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive direct deposit vitrified silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a dry direct deposit vitrified silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.
    Type: Application
    Filed: April 24, 2001
    Publication date: February 14, 2002
    Inventors: John T. Brown, Stephen C. Currie, Lisa A. Moore, Susan L. Schiefelbein, Robert S. Pavlik